Silicon Carbide (SiC) Materials & Device Workshop

#Silicon #Carbide #MEMS #Photonics #Quantum #Sciences
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This workshop is 1.5 days and focuses on Silicon Carbide (SiC) Materials and Devices. The event will be at Wright Brothers Institute Tec^Edge facility on 13-14 Dec 2018 (Thurs 0745-1700, Fri 0800-1200) with technical talks all day the first day, followed by a keynote presentation and poster session the second day. The presentations are organized into 4 main sessions: Materials and Processing, Electronics, MEMS/NEMS, and Photonics/Quantum Sciences. Presenters are from across academia, government and industry - with emphasis on defense applications.  Additional details can be found at the workshop website:  https://sites.google.com/case.edu/sic2018. This is the second year of this event, with the initial one being a successful 1-day event at the CWRU campus in Cleveland.

Seating is limited to 60 people and pre-registration is encouraged.  Lunch is sponsored by the IEEE Dayton Photonics Society and will be free for IEEE members.  Registration for non-members is $6.  

  



  Date and Time

  Location

  Hosts

  Registration



  • Start time: 13 Dec 2018 07:45 AM
  • End time: 14 Dec 2018 12:00 AM
  • All times are (GMT-05:00) US/Eastern
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  • 5000 Springfield St
  • Dayton, OH , Ohio
  • United States 45431
  • Building: Wright Brothers Institute - Tec^Edge

  • Contact Event Host
  • Co-sponsored by preetpaul.devgan@us.af.mil
  • Starts 27 November 2018 10:50 AM
  • Ends 13 December 2018 10:00 AM
  • All times are (GMT-05:00) US/Eastern
  • Admission fee ?






Agenda

Day 1 - Thurday - 13 Dec 2018

0745-0800 Welcome, Introduction & Workshop Logistics

0800-1000 Session 1 - Materials and Processing

1020-1205 Session 2 - Electronics

1215-1315 Lunch

1315-1500 Session 3 - M/NEMS

1510-1655 Session 4- Photonics/Quantum Sciences

Day 2 - Friday -14 Dec 2018

0800-0830 Keynote Presentation

0830-1000 Poster Session