Silicon Carbide (SiC) Materials & Device Workshop
This workshop is 1.5 days and focuses on Silicon Carbide (SiC) Materials and Devices. The event will be at Wright Brothers Institute Tec^Edge facility on 13-14 Dec 2018 (Thurs 0745-1700, Fri 0800-1200) with technical talks all day the first day, followed by a keynote presentation and poster session the second day. The presentations are organized into 4 main sessions: Materials and Processing, Electronics, MEMS/NEMS, and Photonics/Quantum Sciences. Presenters are from across academia, government and industry - with emphasis on defense applications. Additional details can be found at the workshop website: https://sites.google.com/case.edu/sic2018. This is the second year of this event, with the initial one being a successful 1-day event at the CWRU campus in Cleveland.
Seating is limited to 60 people and pre-registration is encouraged. Lunch is sponsored by the IEEE Dayton Photonics Society and will be free for IEEE members. Registration for non-members is $6.
Date and Time
Location
Hosts
Registration
- Start time: 13 Dec 2018 07:45 AM
- End time: 14 Dec 2018 12:00 AM
- All times are (GMT-05:00) US/Eastern
- Add Event to Calendar
- 5000 Springfield St
- Dayton, OH , Ohio
- United States 45431
- Building: Wright Brothers Institute - Tec^Edge
- Contact Event Host
- Co-sponsored by preetpaul.devgan@us.af.mil
- Starts 27 November 2018 10:50 AM
- Ends 13 December 2018 10:00 AM
- All times are (GMT-05:00) US/Eastern
- Admission fee ?
Agenda
Day 1 - Thurday - 13 Dec 2018
0745-0800 Welcome, Introduction & Workshop Logistics
0800-1000 Session 1 - Materials and Processing
1020-1205 Session 2 - Electronics
1215-1315 Lunch
1315-1500 Session 3 - M/NEMS
1510-1655 Session 4- Photonics/Quantum Sciences
Day 2 - Friday -14 Dec 2018
0800-0830 Keynote Presentation
0830-1000 Poster Session