CR IEEE MTT Distinguished Microwave Lecturer Dr. Charles Campbell:GaN MMICs

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The Cedar Rapids Section Microwave Theory and Techniques (MTT) Chapter is delighted to host a presentation by the MTT Distinguished Microwave Lecturer Dr. Charles Campbell of QORVO. Join fellow IEEE members, and guests to see and learn about Gallium Nitride (GaN) Power monolithic microwave integrated circuit (MMIC’s).

GaN based transistor technology’s characteristics of very high current density combined with high voltage operation have held promise to vastly improve many microwave circuit applications that presently utilize Gallium Arsenide (GaAs) devices. Today, GaN transistors are capable of high voltage operation while simultaneously demonstrating FT & Fmax, characteristics more typical of lower voltage GaAs PHEMT devices. GaN MMIC’s are capable of highly efficient switched modes of power amplifier operation at higher output power levels and frequency with greatly reduced die size. Very high power switches can be designed by using large control voltages and taking advantage of the high current capability of GaN. While the advantages of GaN are manifest, many of the features that make GaN transistors attractive can create significant issues that are typically not encountered with lower voltage technologies. In this talk, examples and scenarios are discussed highlighting the benefits and issues associated GaN MMIC technology.

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5:00 -5:30 PM   Social and Introduction

5:30 - 6:30 PM   Lecture

6:30 - 7 PM        Q&A

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