Electron Device Society Technical Seminar and Networking Opportunity
Challenge in electrical characterization of advanced MOSFETs
State-of-the art MOSFETs employ various enhancements to boost ON current. Most efforts focus on improving the channel mobility. However, ON current is determined by the total resistance, not the channel resistance. Alarmingly, 50% or more of the total resistance is not channel resistance in advanced MOSFET, and percentage is getting larger for more advanced nodes. Exactly how much turns out to be a difficult question to answer. This is because measuring either channel mobility or series resistance reliably is challenging. Already, there is good chance that the effort of improving the channel has reached diminishing return. Yet resources continue to pour into this direction by both industry and academics. Clearly, there is an acute need to find solution to this measurement problem. In this talk, some of our efforts at NIST is described.
Date and Time
Location
Hosts
Registration
- Date: 11 Oct 2017
- Time: 06:00 PM to 08:30 PM
- All times are (GMT-05:00) US/Eastern
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- Montgomery College (Rockville campus)
- 51 Mannakee Street
- Rockville, Maryland
- United States 20850
- Building: Science Center
- Room Number: SW 301
- Click here for Map
- Contact Event Host
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For further details contact EDS Local chair: Joseph Kopanski, NIST
Montgomery College contact: Professer Lan Xiang, lan.xiang@montgomerycollege.edu - Co-sponsored by Montgomery College IEEE Student Chapter and Reliability Society (RL07) Wash/No. Va
- Starts 19 September 2017 12:00 AM
- Ends 11 October 2017 07:30 PM
- All times are (GMT-05:00) US/Eastern
- No Admission Charge
Speakers
Dr. (Charles) Kin P. Cheung of National Institute of Standards and Technology
Challenge in electrical characterization of advanced MOSFETs
State-of-the art MOSFETs employ various enhancements to boost ON current. Most efforts focus on improving the channel mobility. However, ON current is determined by the total resistance, not the channel resistance. Alarmingly, 50% or more of the total resistance is not channel resistance in advanced MOSFET, and percentage is getting larger for more advanced nodes. Exactly how much turns out to be a difficult question to answer. This is because measuring either channel mobility or series resistance reliably is challenging. Already, there is good chance that the effort of improving the channel has reached diminishing return. Yet resources continue to pour into this direction by both industry and academics. Clearly, there is an acute need to find solution to this measurement problem. In this talk, some of our efforts at NIST is described.
Biography:
Dr. Cheung is a physical scientist in the Advanced Device Reliability and Characterization Group in the Engineering Physics Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). Prior to joining NIST in 2007, Dr. Cheung was an associate professor in Rutgers University. Prior to Rutgers University, Dr. Cheung spent 18 Years as a member of the technical staff at Bell Laboratories in Murray Hill, NJ. Dr. Cheung published over 140 refereed journal and conference papers. He has written a monograph entitled "Plasma Charging Damage" which published in 2000. He holds 6 patents. Dr. Cheung taught tutorials in many international conferences. He also served in the committees of many of these conferences. Dr. Cheung received the Bell Lab President's Gold Award in 1997, and the Outstanding Achievement Award from the International Symposium on Plasma Process-Induced Damage.
Email:
Address:100 Bureau Dr., stop 8120, , Gaithersburg, United States, 20899
Dr. (Charles) Kin P. Cheung of National Institute of Standards and Technology
Challenge in electrical characterization of advanced MOSFETs
Biography:
Email:
Address:Gaithersburg, United States
Agenda
6:00 pm Light supper and networking opportunity
7:00 pm Technical talk