BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:US/Pacific BEGIN:DAYLIGHT DTSTART:20180311T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20171105T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20171206T030957Z UID:F4206BC0-E5B6-11E7-833E-0050568D7F66 DTSTART;TZID=US/Pacific:20171120T113000 DTEND;TZID=US/Pacific:20171120T133000 DESCRIPTION:The excitement of nanowire research is due to the unique electr onic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano-building blocks for the next generation devices\, which are expected to revolutionise our tech nological world. Unique properties stem from nanowires’ large surface ar ea-to-volume ratio\, very high aspect ratio\, and carrier and photon confi nement in two dimensions. These nanowires are usually grown by the so-call ed vapor-liquid-solid mechanism\, which relies on a metal nanoparticle to catalyze and seed the growth. An alternative technique to grow the nanowir es is by selective area growth technique\, where a dielectric mask is firs t patterned on the substrate prior to growth.\n\nIn this talk\, I will pre sent an overview of compound semiconductor nanowire research activities at The Australian National University. The optical and structural properties of binary and ternary III-V nanowires including GaAs\, InGaAs\, InP and G aAsSb nanowires grown by metal-organic vapour phase epitaxy will be presen ted. Various issues such as tapering of the nanowires\, compositional non- uniformity along nanowires\, crystal structure\, carrier lifetime and pola rization effect will be discussed.\n\nI will also present our results of I II-V nanowires grown on Si substrates which are of great interests for the integration of nano-optoelectronic devices on Si platforms. Our results o f enhancing the quantum efficiency of nanowires by using plasmonics are pr omising to improve the performance of nanowire devices.\n\nFinally\, the r esults from our nanowire lasers\, photodetectors\, solar cells and photoel ectrodes for water splitting will be presented.\n\nCo-sponsored by: IEEE P hotonics Society\n\nSpeaker(s): Professor Hoe Tan\, \n\nSanta Clara\, Cali fornia\, United States LOCATION:Santa Clara\, California\, United States ORGANIZER:vasudabhatia@live.com SEQUENCE:0 SUMMARY:[Legacy Report] Semiconductor Nanowires for Optoelectronic and Ener gy Applications URL;VALUE=URI:https://events.vtools.ieee.org/m/154671 X-ALT-DESC:Description: <br /><p>The excitement of nanowire research is due to the unique electronic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano -building blocks for the next generation devices\, which are expected to r evolutionise our technological world. Unique properties stem from nanowire s&rsquo\; large surface area-to-volume ratio\, very high aspect ratio\, an d carrier and photon confinement in two dimensions. These nanowires are us ually grown by the so-called vapor-liquid-solid mechanism\, which relies o n a metal nanoparticle to catalyze and seed the&nbsp\;growth. An alternati ve technique to grow the nanowires is by selective area growth technique\, where a dielectric mask is first patterned on the substrate prior to grow th.</p>\n<p><img src="https://cdn.evbuc.com/eventlogos/28041135/picture4.j pg" /></p>\n<p>In this talk\, I will present an overview of compound semic onductor nanowire research activities at The Australian National Universit y. The optical and structural properties of binary and ternary III-V nanow ires including GaAs\, InGaAs\, InP and GaAsSb nanowires grown by metal-org anic vapour phase epitaxy will be presented. Various issues such as taperi ng of the nanowires\, compositional non-uniformity along nanowires\, cryst al structure\, carrier lifetime and polarization effect will be discussed. </p>\n<p><img class="" src="https://cdn.evbuc.com/eventlogos/28041135/pict ure5.jpg" width="441" height="368" /></p>\n<p>I will also present our resu lts of III-V nanowires grown on Si substrates which are of great interests for the integration of nano-optoelectronic devices on Si platforms. Our r esults of enhancing the quantum efficiency of nanowires by using plasmonic s are promising to improve the performance of nanowire devices.</p>\n<p><i mg class="" src="https://cdn.evbuc.com/eventlogos/28041135/picture3.jpg" w idth="307" height="434" /></p>\n<p>Finally\, the results from our nanowire lasers\, photodetectors\, solar cells and photoelectrodes for water split ting will be presented.</p> END:VEVENT END:VCALENDAR