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DTSTART;TZID=America/Los_Angeles:20190221T180000
DTEND;TZID=America/Los_Angeles:20190221T201500
DESCRIPTION:Abstracts: The emergence of the Internet of Things (IoT) poses 
 stringent requirements on the energy consumption and has hence become the 
 primary driver for low-power analog and RF circuit design. Implementation 
 of increasingly complex functions under highly constrained power and area 
 budgets\, while circumventing the challenges posed by modern device techno
 logies\, makes the design of low-power RF CMOS radios ever more challengin
 g. The power consumption of GHz short-range radios such as the ones used i
 n BTLE has been significantly reduced in the last decade\, but seems to le
 vel off at a few mW. This is still much too high to allow for continuous-t
 ime operation and duty cycling the radio is unavoidable in order to reach 
 the tens of µW power consumption required for a multi-year autonomy. Duty
 -cycling unavoidably introduces some energy overhead that is wasted during
  turn-on and turn-off times. On the other hand\, since there will be many 
 radios that will share the same media\, in order to avoid network congesti
 on\, the transmit times have to be made shorter by increasing the peak dat
 a rate. This results in the energy overhead becoming dominant. The use of 
 PLL-free synthesizer using an RF MEMS frequency reference enables to minim
 ize the wake-up and shutdown times to a few µs and hence minimize the ene
 rgy-overhead. We will start with an introduction showing the requirements 
 of IoT nodes with a focus on power consumption. We then will present how h
 igh-Q MEMS resonators can be used to further reduce the power consumption 
 of low-power radios. After presenting the main features of high-Q MEMS res
 onators including bulk acoustic wave (BAW) resonators\, we will show how s
 everal fundamental RF building blocks can benefit from them. Then we will 
 present possible PLL-free transceiver architectures that take advantage of
  the very low phase noise and feature very short start-up time to greatly 
 reduce the overhead energy.\n\nChristian Enz\, PhD\, Swiss Federal Institu
 te of Technology (EPFL)\, 1989. He is currently Professor at EPFL and Dire
 ctor of the Institute of Microengineering (IMT) and head of the IC Lab. Un
 til April 2013 he was VP at the Swiss Center for Electronics and Microtech
 nology (CSEM) in Neuchâtel\, Switzerland where he was heading the Integra
 ted and Wireless Systems Division. Prior to joining the CSEM\, he was Prin
 cipal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems
 )\, Newport Beach\, CA\, where he was responsible for the modeling and cha
 racterization of MOS transistors for RF applications. From 1992 to 1997\, 
 he was an Assistant Professor at EPFL\, working in the field of low-power 
 analog CMOS IC design and device modeling. In 1989 he was one of the found
 ers of Smart Silicon Systems S.A. (S3)\, where he developed several low-no
 ise and low-power ICs\, mainly for high energy physics application at CERN
 . His technical interests and expertise are in the field of ultra low-powe
 r analog and RF IC design\, wireless sensor networks and semiconductor dev
 ice modeling. Together with E. Vittoz and F. Krummenacher he is the develo
 per of the EKV MOS transistor model and the author of the book &quot;Charge-Bas
 ed MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design&quot;
  (Wiley\, 2006). He is the author and co-author of more than 220 scientifi
 c papers and has contributed to numerous conference presentations and adva
 nced engineering courses. He is an IEEE Fellow and an individual member of
  the Swiss Academy of Engineering Sciences (SATW). He has been member of s
 everal technical program committees\, including International Solid-State 
 Circuits Conference (ISSCC) and European Solid-State Circuits Conference (
 ESSCIRC). He has served as a vice-chair for the 2000 International Symposi
 um on Low Power Electronics and Design (ISLPED)\, exhibit chair for the 20
 00 International Symposium on Circuits and Systems (ISCAS) and chair of th
 e technical program committee for the 2006 European Solid-State Circuits C
 onference (ESSCIRC). He has been an elected member of the IEEE Solid-State
  Circuits Society (SSCS) Administrative Committee (AdCom) from 2012 to 201
 4 and the Chair of the IEEE Solid-State Chapter of West Switzerland. (http
 ://people.epfl.ch/cgi-bin/people?id=105059&amp;op=bio&amp;lang=en&amp;cvlang=en)\n\nCo
 -sponsored by: Farhad Mafie\n\nSpeaker(s): Professor Christian Enz\, \n\nA
 genda: \nDay: Thursday\, February 21\, 2019\n\nTime:  Registration &amp; Netwo
 rking 6:00 p.m. – 6:30 p.m.\n\nPresentation 6:30 p.m. – 8:00 p.m.\n\nQ
 &amp;A and Networking 8:00 p.m. – 8:15 p.m.\n\nFee: Free for all the IEEE &amp; 
 SSCS members\, students\, engineers in transition\, technologists\, as wel
 l as those who are exploring to join IEEE &amp; SSCS in the future.\n\nRoom: 2
 nd Floor Conf Room \, Knobbe Martens\, 2040 Main St\, Irvine\, California\
 , United States\, 92614
LOCATION:Room: 2nd Floor Conf Room \, Knobbe Martens\, 2040 Main St\, Irvin
 e\, California\, United States\, 92614
ORGANIZER:IEEE.OC.SSCS.RSVP@Gmail.com
SEQUENCE:1
SUMMARY:Ultra Low-power and Fast Wake-up MEMS-based Radios for the IoT
URL;VALUE=URI:https://events.vtools.ieee.org/m/188029
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;Abstracts: &amp;nbsp\;&lt;/strong&gt;The eme
 rgence of the Internet of Things (IoT) poses stringent requirements on the
  energy consumption and has hence become the primary driver for low-power 
 analog and RF circuit design. Implementation of increasingly complex funct
 ions under highly constrained power and area budgets\, while circumventing
  the challenges posed by modern device technologies\, makes the design of 
 low-power RF CMOS radios ever more challenging. The power consumption of G
 Hz short-range radios such as the ones used in BTLE has been significantly
  reduced in the last decade\, but seems to level off at a few mW. This is 
 still much too high to allow for continuous-time operation and duty cyclin
 g the radio is unavoidable in order to reach the tens of &amp;micro\;W power c
 onsumption required for a multi-year autonomy. Duty-cycling unavoidably in
 troduces some energy overhead that is wasted during turn-on and turn-off t
 imes. On the other hand\, since there will be many radios that will share 
 the same media\, in order to avoid network congestion\, the transmit times
  have to be made shorter by increasing the peak data rate. This results in
  the energy overhead becoming dominant. The use of PLL-free synthesizer us
 ing an RF MEMS frequency reference enables to minimize the wake-up and shu
 tdown times to a few &amp;micro\;s and hence minimize the energy-overhead. We 
 will start with an introduction showing the requirements of IoT nodes with
  a focus on power consumption. We then will present how high-Q MEMS resona
 tors can be used to further reduce the power consumption of low-power radi
 os. After presenting the main features of high-Q MEMS resonators including
  bulk acoustic wave (BAW) resonators\, we will show how several fundamenta
 l RF building blocks can benefit from them. Then we will present possible 
 PLL-free transceiver architectures that take advantage of the very low pha
 se noise and feature very short start-up time to greatly reduce the overhe
 ad energy.&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Christian Enz\, &lt;/strong&gt;PhD\, Swiss Federal In
 stitute of Technology (EPFL)\, 1989. He is currently Professor at EPFL and
  Director of the Institute of Microengineering (IMT) and head of the IC La
 b. Until April 2013 he was VP at the Swiss Center for Electronics and Micr
 otechnology (CSEM) in Neuch&amp;acirc\;tel\, Switzerland where he was heading 
 the Integrated and Wireless Systems Division. Prior to joining the CSEM\, 
 he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconduc
 tor Systems)\, Newport Beach\, CA\, where he was responsible for the model
 ing and characterization of MOS transistors for RF applications. From 1992
  to 1997\, he was an Assistant Professor at EPFL\, working in the field of
  low-power analog CMOS IC design and device modeling. In 1989 he was one o
 f the founders of Smart Silicon Systems S.A. (S3)\, where he developed sev
 eral low-noise and low-power ICs\, mainly for high energy physics applicat
 ion at CERN. His technical interests and expertise are in the field of ult
 ra low-power analog and RF IC design\, wireless sensor networks and semico
 nductor device modeling. Together with E. Vittoz and F. Krummenacher he is
  the developer of the EKV MOS transistor model and the author of the book 
 &quot;Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF
  IC Design&quot; (Wiley\, 2006). He is the author and co-author of more than 22
 0 scientific papers and has contributed to numerous conference presentatio
 ns and advanced engineering courses.&amp;nbsp\; He is an IEEE Fellow and an in
 dividual member of the Swiss Academy of Engineering Sciences (SATW). He ha
 s been member of several technical program committees\, including Internat
 ional Solid-State Circuits Conference (ISSCC) and European Solid-State Cir
 cuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 Int
 ernational Symposium on Low Power Electronics and Design (ISLPED)\, exhibi
 t chair for the 2000 International Symposium on Circuits and Systems (ISCA
 S) and chair of the technical program committee for the 2006 European Soli
 d-State Circuits Conference (ESSCIRC). He has been an elected member of th
 e IEEE Solid-State Circuits Society (SSCS) Administrative Committee (AdCom
 ) from 2012 to 2014 and the Chair of the IEEE Solid-State Chapter of West 
 Switzerland. (http://people.epfl.ch/cgi-bin/people?id=105059&amp;amp\;op=bio&amp;a
 mp\;lang=en&amp;amp\;cvlang=en)&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;Day:&lt;/
 strong&gt; &amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nb
 sp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;
 &amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\; &lt;strong&gt;Thursday\, February 21\
 , 2019&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Time:&amp;nbsp\;&amp;nbsp\; &lt;/strong&gt;&amp;nbsp\;&amp;nbsp\
 ;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nb
 sp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;
  Registration &amp;amp\; Networking &amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;
  6:00 &amp;nbsp\;p.m. &amp;nbsp\;&amp;ndash\; &amp;nbsp\;6:30 &amp;nbsp\;p.m.&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;
 Presentation&amp;nbsp\; &amp;nbsp\; &amp;nbsp\; &amp;nbsp\; &amp;nbsp\; &amp;nbsp\; &amp;nbsp\; &amp;nbsp\
 ;6:30 &amp;nbsp\;p.m. &amp;nbsp\;&amp;ndash\; 8:00 &amp;nbsp\;p.m.&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Q&amp;amp\
 ;A and Networking &amp;nbsp\;&amp;nbsp\;&amp;nbsp\; &amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\
 ;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\; 8:00 &amp;nbsp\;p.m. &amp;ndash\; &amp;nbs
 p\;&amp;nbsp\;8:15 &amp;nbsp\;p.m.&lt;/p&gt;\n&lt;p&gt;&lt;strong&gt;Fee:&amp;nbsp\;&lt;/strong&gt;Free for al
 l the IEEE &amp;amp\; SSCS members\, students\, engineers in transition\, tech
 nologists\, as well as those who are exploring to join IEEE &amp;amp\; SSCS in
  the future. &lt;strong&gt;&amp;nbsp\;&lt;/strong&gt;&lt;/p&gt;
END:VEVENT
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