BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:US/Eastern BEGIN:DAYLIGHT DTSTART:20190310T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20191103T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20191015T174237Z UID:2D98D19B-6B12-4EB8-AEEB-CD8846FC841E DTSTART;TZID=US/Eastern:20191009T090000 DTEND;TZID=US/Eastern:20191009T170000 DESCRIPTION:The Baltimore Chapter of Electron Devices and Solid-State Circu its will be hosting its seventh Fall Colloquium on October 9\, 2019. The t heme of this year's meeting is Next Gen Technologies for 5G and Beyond. Th is one-day event features a panel of Distinguished Lecturers from IEEE EDS and local experts in the field. Attendance is open to industry\, governme nt\, and academia\, including students. The venue is the American Center f or Physics (Conference Room A)\, one mile southeast of the University of M aryland College Park campus. For location and directions see http://www.ac p.org/directions-american-center-physics.\n\nAdmission and parking are fre e\, but registration is required. Complimentary lunch will be provided for those who register by October 4. Attendance is limited to 50\; if you are unable to register online\, contact the chapter secretary papotyraj@ieee. org.\n\nCo-sponsored by [Washington DC / NoVa EDS](mailto:murtyp@ieee.org) .\n\nSchedule:\n\n09:00 Registration and Coffee\n09:15 Dr. Pankaj Shah (IE EE EDS/SSCS)\, Opening Remarks\n09:30 Dr. A. Bandyopadhyay (Globalfoundrie s)\, "Si Technologies for 5G Enhanced Mobile Broadband"\n10:15 Dr. Paul La ne (Nat'l Science Foundation)\, "Advances in Devices and Circuits for Next Gen Comms"\n10:45 Dr. Patrick Fay (Notre Dame)\, "Advances in III-N Devic es for 5G and Beyond"\n11:30 Lunch\n12:30 Dr. Mario Miscuglio (George Wash ington University)\, "Integrated Photonics for Neuromorphic Computing"\n01 :00 Dr. Mina Rais-Zadeh (Univ. of Michigan)\, "Phase Change RF to Optical Microdevices"\n01:45 Dr. Robert Young (Northrop Grumman)\, "Third Generati on GeTe-based Phase Change RF Switches"\n02:15 Coffee Break\n02:30 Dr. Dav id Meyer (Naval Research Lab)\, "Transition Metal Nitride Materials & Devi ces for Future RF"\n03:00 Dr. Aris Christou (Univ. of Maryland)\, "Crystal Defects in GaN & Diamond Electronics"\n03:30 Dr. Pankaj Shah (Army Resear ch Lab)\, "Transfer-Doped Diamond FETs for Next Gen RF"\n04:00 Closing Rem arks\n\nCo-sponsored by: Washington DC / NoVa EDS (murtyp@ieee.org)\n\nAge nda: \nBandyopadhyay: 5G involves different usage scenarios covering enhan ced mobile broadband (eMBB)\, ultra-reliable\, low latency communication a nd low power massive machine-to-machine communication. I’ll focus on mmW ave based eMBB\, highlighting the need for mmWave based mobile communicati on\, different hardware architecture options and key figures of merits for the radio interface. I'll discuss different chip partitioning options and how different Si technologies can address the requirements for mmWave 5G architectures.\n\nLane: Advances in Devices and Circuits for Next Generati on Communications.\n\nFay: Achieving 5G comm systems requires advancements in device technologies. To obtain low latency and high bandwidth\, device s offering mm-wave performance with low power consumption but still delive ring low noise figure\, high linearity\, and ability to be integrated in c ompact form are essential. Properties of III-N materials enable new approa ches for designing mm-wave transistors for switching and low-noise amplifi er applications\, while novel fabrication processing techniques provide op tions for realizing highly-integrated systems with enhanced performance.\n \nMiscuglio: Engineering architectures able to implement Neural Network (N N) algorithms with high efficiency is of major importance for applications ranging from pattern recognition to classification. The main solution con sists in replacing general purpose processor with more specialized and tas k-specific processor\, such as GPUs or FPGAs. We propose a feedforward ful ly-connected NN on integrated photonic circuits optimized for data computa tion and parallelism. The proposed technology can be employed as micro dat a centers in edge devices that can perform in real time intelligent decisi on over large data with high throughput at the edge of the network.\n\nRai s-Zadeh: Chalcogenide glasses are a subfamily of phase change materials (P CM) with nonvolatile properties which have been incorporated into differen t electronic and optical systems. PCMs undergo a transition between their room-temperature-stable phases\, amorphous and crystalline\, in response t o external stimulus such as current or laser pulse. Amorphous films are op tically transparent and electrically isolative while crystalline PCMs are typically optically lossy\, reflective\, and electrically conductive. 6 or ders of magnitude change in resistivity and 2X change in optical propertie s make GeTe a good candidate for electrical and optical devices. I'll pres ent several tunable devices using optical or electrical switching behavior of GeTe\, including RF ohmic switches\, optical modulators\, and color fi lters\, and our approach to mitigate challenges.\n\nYoung: Recent progress in GeTe-based phase-change RF switch technology will be presented. Tungst en micro-heaters in the Inline Phase Change Switch (ICPS) processes improv ed device performance and reliability. Simulations of the melt/quench in G eTe for a thermally activated independent W heating element will be shown. A small series-shunt\, single-pole double-throw switch based on 3rd gener ation IPCS technology had <1 dB loss at DC-65GHz and was shown to successf ully melt/quench down to 40 mK.\n\nMeyer: As future 5G requirements push t he limits of RF hardware\, new materials systems may help realize device a mplifier and filter technology suitable for microwave to millimeter-wave o peration. NRL is investigating thin film growth of transition metal nitrid e materials including ScAlN\, which offers higher spontaneous and piezoele ctric polarization properties than AlN. With MBE we achieve single-crystal films with uniform composition lattice-matched to GaN and used for device heterostructures. This talk will overview our growth of transition metal nitride films and subsequent application in high-electron-mobility transis tors and acoustic wave resonators.\n\nChristou: Switching devices made fro m SiC and GaN semiconductors contain a high density of crystal defects\, m ost present in starting wafers and some generated in processing. There's l ittle evidence on the role crystal defects play on performance\, yield\, a nd reliability\, especially operating under extreme stress. This paper pro vides a review of Diamond and GaN power semiconductor material technology\ , and the potential role defects may have.\n\nShah: To process and transmi t massive information expected in cellular networks\, higher frequency sem iconductor electronics R&D is taking place today. One semiconductor with g reat potential is diamond\, due to high charge carrier bulk mobility\, the rmal conductivity\, and breakdown voltage. To achieve high free carrier co ncentrations for high conductivity RF FETs\, transfer doping is the choice method. Our group is fabricating and characterizing surface transfer dope d diamond RF FETs on externally sourced single-crystal diamond wafers. We obtained 70 GHz cutoff frequencies on currents of 750 mA/mm\, and transcon ductances of 140 mS/mm. Transfer doping is key to obtaining high free char ge carrier densities for surface conduction devices in diamond. However th e challenges we are working to mitigate are 1) maintaining high free charg e carrier densities\, 2) increasing surface mobility of charge carriers an d 3) device stability over time. Results obtained to date will be presente d along with a discussion on the modeling activity underway to develop cir cuits based on these devices.\n\nRoom: Conference Room A\, Bldg: American Center for Physics\, One Physics Ellipse\, College Park\, Maryland\, Unite d States\, 20740 LOCATION:Room: Conference Room A\, Bldg: American Center for Physics\, One Physics Ellipse\, College Park\, Maryland\, United States\, 20740 ORGANIZER:papotyraj@ieee.org SEQUENCE:19 SUMMARY:Baltimore Colloquium on Next Gen Technologies for 5G and Beyond URL;VALUE=URI:https://events.vtools.ieee.org/m/195280 X-ALT-DESC:Description: <br /><p>The <strong>Baltimore Chapter of Electron Devices and Solid-State Circuits</strong> will be hosting its seventh <str ong>Fall Colloquium&nbsp\;</strong>on October 9\, 2019.&nbsp\; The theme o f this year's meeting is<strong> Next Gen Technologies for 5G and Beyond</ strong>.&nbsp\; This one-day event features&nbsp\;a panel of Distinguished Lecturers from IEEE EDS and local&nbsp\;experts in&nbsp\;the field.&nbsp\ ; Attendance is open to industry\, government\, and academia\, including s tudents.&nbsp\; The venue is the American Center for Physics (Conference R oom A)\, one mile southeast of the University of Maryland College Park cam pus.&nbsp\;&nbsp\;For location and directions see <a href="http://www.acp. org/directions-american-center-physics">http://www.acp.org/directions-amer ican-center-physics</a>.</p>\n<p>Admission and parking are free\, but regi stration is required.&nbsp\;&nbsp\;<em><span style="color: #800080\;">Comp limentary lunch will be provided for those who register by October 4</span ></em>.&nbsp\; Attendance is limited to 50\; if you are unable to register online\, contact the chapter secretary <a href="mailto:papotyraj@ieee.org ">papotyraj@ieee.org</a>.</p>\n<p>Co-sponsored by <a href="mailto:murtyp@i eee.org">Washington DC / NoVa EDS</a>.</p>\n<p><span style="text-decoratio n: underline\;"><strong>Schedule:</strong></span></p>\n<p>09:00&nbsp\; Reg istration and Coffee<br />09:15&nbsp\; Dr. Pankaj Shah (IEEE EDS/SSCS)\, O pening Remarks<br />09:30&nbsp\; Dr. A. Bandyopadhyay (Globalfoundries)\, "Si Technologies for 5G Enhanced Mobile Broadband"<br />10:15&nbsp\; Dr. P aul Lane (Nat'l Science Foundation)\, "Advances in Devices and Circuits fo r Next Gen Comms"<br />10:45&nbsp\; Dr. Patrick Fay (Notre Dame)\, "Advanc es in III-N Devices for 5G and Beyond"<br />11:30&nbsp\; Lunch&nbsp\;<br / >12:30&nbsp\; Dr. Mario Miscuglio (George Washington University)\, "Integr ated Photonics for Neuromorphic Computing"<br />01:00&nbsp\; Dr. Mina Rais -Zadeh (Univ. of Michigan)\, "Phase Change RF to Optical Microdevices"<br />01:45&nbsp\; Dr. Robert Young (Northrop Grumman)\, "Third Generation GeT e-based Phase Change RF Switches"<br />02:15&nbsp\; Coffee Break&nbsp\;<br />02:30&nbsp\; Dr. David Meyer (Naval Research Lab)\, "Transition Metal N itride Materials &amp\; Devices for Future RF"<br />03:00&nbsp\; Dr. Aris Christou (Univ. of Maryland)\, "Crystal Defects in GaN &amp\; Diamond Elec tronics"<br />03:30&nbsp\; Dr. Pankaj Shah (Army Research Lab)\, "Transfer -Doped Diamond FETs for Next Gen RF"<br />04:00&nbsp\; Closing Remarks</p> <br /><br />Agenda: <br /><p>Bandyopadhyay:&nbsp\;5G involves different us age scenarios covering enhanced mobile broadband (eMBB)\, ultra-reliable\, low latency&nbsp\;communication and low power massive machine-to-machine communication. I&rsquo\;ll focus on mmWave based eMBB\, highlighting the n eed for mmWave based mobile communication\, different hardware architectur e options and key figures of merits for the radio interface. I'll discuss different chip partitioning options and&nbsp\;how different Si technologie s can address the requirements for mmWave 5G architectures.</p>\n<p>Lane: Advances in Devices and Circuits for Next Generation Communications.</p>\n <p>Fay: Achieving 5G comm systems requires advancements in device technolo gies. To obtain low latency and high bandwidth\, devices offering mm-wave performance with low power consumption but still delivering low noise figu re\, high linearity\, and ability to be integrated in compact form are ess ential. Properties of III-N materials enable new approaches for designing mm-wave transistors for switching and low-noise amplifier applications\, w hile novel fabrication processing techniques provide options for realizing highly-integrated systems with enhanced performance.</p>\n<p>Miscuglio: E ngineering architectures able to implement Neural Network (NN) algorithms with high efficiency is of major importance for applications ranging from pattern recognition to classification. The main solution consists in repla cing general purpose processor with more specialized and task-specific pro cessor\, such as GPUs or FPGAs. We propose a feedforward fully-connected N N on integrated photonic circuits optimized for data computation and paral lelism. The proposed technology can be employed as micro data centers in e dge devices that can perform in real time intelligent decision over large data with high throughput at the edge of the network.&nbsp\;</p>\n<p>Rais- Zadeh:&nbsp\;Chalcogenide glasses are a subfamily of phase change material s (PCM) with nonvolatile properties which have been incorporated into diff erent electronic and optical systems. PCMs undergo a transition between th eir room-temperature-stable phases\, amorphous and crystalline\, in respon se to external stimulus such as current or laser pulse. &nbsp\;Amorphous f ilms are optically transparent and electrically isolative while crystallin e PCMs are typically optically lossy\, reflective\, and electrically condu ctive. 6 orders of magnitude change in resistivity and 2X change in optica l properties make GeTe a good candidate for electrical and optical devices . I'll present several tunable devices using optical or electrical switchi ng behavior of GeTe\, including RF ohmic switches\, optical modulators\, a nd color filters\, and our approach to mitigate challenges.</p>\n<p>Young: Recent progress in GeTe-based phase-change RF switch technology will be p resented. Tungsten micro-heaters in the Inline Phase Change Switch (ICPS)& nbsp\;processes improved device performance and reliability. Simulations o f the melt/quench in GeTe for a thermally activated independent W heating element will be shown. A small series-shunt\, single-pole double-throw swi tch based on 3rd generation IPCS technology had &lt\;1 dB loss at DC-65GHz and was shown to successfully melt/quench down to 40 mK.</p>\n<p>Meyer: A s future 5G requirements push the limits of RF hardware\, new materials sy stems may help realize device amplifier and filter technology suitable for microwave to millimeter-wave operation. NRL is investigating thin film gr owth of transition metal nitride materials including ScAlN\, which offers higher spontaneous and piezoelectric polarization properties than AlN. Wit h MBE we achieve single-crystal films with uniform composition lattice-mat ched to GaN and used for device heterostructures. This talk will overview our growth of transition metal nitride films and subsequent application in high-electron-mobility transistors and acoustic wave resonators.</p>\n<p> Christou: Switching devices made from SiC and GaN semiconductors contain a high density of crystal defects\, most present in starting wafers and som e generated in processing. There's little evidence on the role crystal def ects play on performance\, yield\, and reliability\, especially operating under extreme stress. This paper provides a review of Diamond and GaN powe r semiconductor material technology\, and the potential role defects may h ave.</p>\n<p>Shah: To process and transmit massive information expected in cellular networks\, higher frequency semiconductor electronics R&amp\;D i s taking&nbsp\;place today. One semiconductor with great potential is diam ond\, due to high charge carrier bulk mobility\, thermal conductivity\, an d breakdown voltage.&nbsp\; To achieve&nbsp\;high free carrier concentrati ons for high conductivity RF FETs\, transfer doping is the choice method. Our group is fabricating and&nbsp\;characterizing surface transfer doped d iamond RF FETs on externally sourced&nbsp\;single-crystal diamond wafers. We obtained 70 GHz cutoff frequencies on currents of 750 mA/mm\, and trans conductances of 140 mS/mm. Transfer doping is key to obtaining high free c harge carrier densities for&nbsp\;surface conduction devices in diamond. H owever the challenges we are working to mitigate are 1) maintaining high f ree&nbsp\;charge carrier densities\, 2) increasing surface mobility of cha rge carriers&nbsp\;and 3) device stability over time. Results obtained to date will be&nbsp\;presented along with a discussion on the modeling activ ity underway to develop circuits based on these devices.</p> END:VEVENT END:VCALENDAR