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DTSTART:20130310T030000
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BEGIN:VEVENT
DTSTAMP:20131015T215513Z
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DTSTART;TZID=US/Eastern:20131003T083000
DTEND;TZID=US/Eastern:20131003T170000
DESCRIPTION:A Review of GaN Transistors and MMCs for Very High Power Applic
 ations. Content of Presentation A Review of GaN HEMT Transistors and MMICs
  for Very High Power Applications Summary Advantages of GaN HEMT Technolog
 y and impact on high power PA engineering Field Plates\, Reliability\, Rob
 ustness CW\, Pulsed and “Linear” Operation Modes Thermal Manag
 ement CW thru’ pulsed operation – transient thermal resistan
 ce Examples of commercially available devices Different methods of power c
 ombining PA line-ups and use of MMICs as drivers Examples of hardware real
 izations L-Band\, S-Band\, C-Band\, X-Band\, Ku-Band\, Ka-Band Radars\, EW
 \, Satcom\, Space Table of typical performances versus frequency Conclusio
 ns\n\nCo-sponsored by: MTT/AP-S Chapter\n\nSpeaker(s): Dr. Raymond  Pengel
 ly\, \, Dr. Raymond  Pengelly\, \n\nAgenda: \nContent of Presentation A Re
 view of GaN HEMT Transistors and MMICs for Very High Power Applications Su
 mmary Advantages of GaN HEMT Technology and impact on high power PA engine
 ering Field Plates\, Reliability\, Robustness CW\, Pulsed and “Linea
 r” Operation Modes Thermal Management CW thru’ pulsed operati
 on – transient thermal resistance Examples of commercially availabl
 e devices Different methods of power combining PA line-ups and use of MMIC
 s as drivers Examples of hardware realizations L-Band\, S-Band\, C-Band\, 
 X-Band\, Ku-Band\, Ka-Band Radars\, EW\, Satcom\, Space Table of typical p
 erformances versus frequency Conclusions\n\nBldg: Hanover Manor\, 16 Eagle
  Rock Avenue\,  E. Hanover\, New Jersey\, United States\, 07936
LOCATION:Bldg: Hanover Manor\, 16 Eagle Rock Avenue\,  E. Hanover\, New Jer
 sey\, United States\, 07936
ORGANIZER:kdixit@ieee.org
SEQUENCE:3
SUMMARY:A Review of GaN Transistors and MMCs for Very High Power Applicatio
 ns
URL;VALUE=URI:https://events.vtools.ieee.org/m/20111
X-ALT-DESC:Description: <br />A Review of GaN Transistors and MMCs for Very
  High Power Applications.\n\nContent of Presentation A Review of GaN HEMT 
 Transistors and MMICs for Very High Power Applications Summary Advantages 
 of GaN HEMT Technology and impact on high power PA engineering Field Plate
 s\, Reliability\, Robustness CW\, Pulsed and “Linear” Operatio
 n Modes Thermal Management CW thru’ pulsed operation – trans
 ient thermal resistance Examples of commercially available devices Differe
 nt methods of power combining PA line-ups and use of MMICs as drivers Exam
 ples of hardware realizations L-Band\, S-Band\, C-Band\, X-Band\, Ku-Band\
 , Ka-Band Radars\, EW\, Satcom\, Space Table of typical performances versu
 s frequency Conclusions <br /><br />Agenda: <br />Content of Presentation\
 nA Review of GaN HEMT Transistors and MMICs for Very High Power Applicatio
 ns\nSummary\nAdvantages of GaN HEMT Technology and impact on high power PA
  engineering\nField Plates\, Reliability\, Robustness\nCW\, Pulsed and â
 €œLinear” Operation Modes\nThermal Management\nCW thru’ pu
 lsed operation – transient thermal resistance\nExamples of commerci
 ally available devices\nDifferent methods of power combining\nPA line-ups 
 and use of MMICs as drivers\nExamples of hardware realizations\nL-Band\, S
 -Band\, C-Band\, X-Band\, Ku-Band\, Ka-Band\nRadars\, EW\, Satcom\, Space\
 nTable of typical performances versus frequency\nConclusions
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