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DTSTART;TZID=America/New_York:20190725T161500
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DESCRIPTION:GaN (Gallium Nitride) has become the material of choice of worl
 dwide researchers due to its unique material properties hence extremely su
 itable for electronics and optoelectronics applications. The material prop
 erties include direct wide bandgap\, low effective mass\, high mobility\, 
 high saturation velocity\, high breakdown voltage\, high thermal conductiv
 ity\, high polarization\, high temperature sustainability\, high radiation
  resistance\, high power efficiency and high frequency of oscillation whic
 h makes it suitable for high power electronics and microwave/millimeter (m
 m) wave applications. As per suitability the bandgap is tuned from 3.4 eV 
 (GaN) to 6.2 eV (AlN) as per chosen mole fraction ‘x’ in Al x Ga 1-x N
 . In AlGaN/GaN heterostructure device\, a wide bandgap material (AlGaN) is
  grown over narrow bandgap (GaN) material resulting formation of 2DEG (two
 -dimensional electron gas) at the heterointerface due to discontinuity of 
 conduction energy bandgap having electron density of 10 13 -10 14 cm -2 . 
 The ultra-thin layer of 2DEG acts as channel in the heterostructure device
  with reduced scattering resulting the birth of high electron mobility tra
 nsistor(HEMT). In AlGaN/GaN heterostructure\, the polarization induced 2DE
 G makes the HEMT to operate in depletion mode (D-mode) inherently. However
 \, high performance enhancement mode (E-mode) HEMT is always needed in pow
 er electronic applications for fail-safe operation and designing E-mode HE
 MT is a great challenge. The E-mode HEMT can be designed by suitable devic
 e fabrication techniques with novel gate-recessed structures. Hence\, due 
 to the unique material properties\, AlGaN/GaN HEMT has wide applications i
 n power electronics such as power amplifier (PA)\, low noise amplifier (LN
 A)\, Mixer and converter circuits (AC-DC\, DC-DC) etc. Power electronics i
 s the back bone of renewable energy conversions. Silicon based power devic
 es such as DMOS and IGBT have already reached their performance limit. Hen
 ce\, GaN is used here to further reduce energy loss during power conversio
 ns. GaN HEMTs have several other power electronics systems applications su
 ch as laptop power adapter\, solar cell micro-inverter\, power module for 
 EV charging stations and data center server power module etc. Similarly\, 
 it has wide applications in microwave/mm-wave device applications in mobil
 e base stations and satellite communications etc. Due to high radiation re
 sistance GaN HEMT is also highly suitable in space applications.\n\nCo-spo
 nsored by: ED15/CAS04 and AP01/MTT17\n\nSpeaker(s): Dr. T.R. Lenka\, \n\nA
 genda: \n4:45 PM - Refreshments (Pizza) and Networking\n\n4:30PM-5:30 PM: 
 Talk by Dr. T. R. Lenka\, Assistant Professor\, Electronics and Communicat
 ion Engineering\, National Institute of Technology Silchar\, Assam\, INDIA
 \n\nYou do not have to be an IEEE Member to attend. Refreshmen is free for
  all attendess. Please invite your friends and colleagues to take advantag
 es of this Invited Distinguished Lecture.\n\nRoom: 202\, Bldg: ECEC\, 154 
 Summit Street\, Newark\, NJ 07102\, Newark\, New Jersey\, United States\, 
 07102
LOCATION:Room: 202\, Bldg: ECEC\, 154 Summit Street\, Newark\, NJ 07102\, N
 ewark\, New Jersey\, United States\, 07102
ORGANIZER:akpoddar@ieee.org
SEQUENCE:3
SUMMARY:GaN HEMT for High Power and High Frequency Electronics
URL;VALUE=URI:https://events.vtools.ieee.org/m/201564
X-ALT-DESC:Description: <br /><p align="justify">GaN (Gallium Nitride) has 
 become the material of choice of worldwide researchers due to its unique m
 aterial properties hence extremely suitable for electronics and optoelectr
 onics applications. The material properties include direct wide bandgap\, 
 low effective mass\, high mobility\, high saturation velocity\, high break
 down voltage\, high thermal conductivity\, high polarization\, high temper
 ature sustainability\, high radiation resistance\, high power efficiency a
 nd high frequency of oscillation which makes it suitable for high power el
 ectronics and microwave/millimeter (mm) wave applications. As per suitabil
 ity the bandgap is tuned from 3.4 eV (GaN) to 6.2 eV (AlN) as per chosen m
 ole fraction &lsquo\;x&rsquo\; in Al x Ga 1-x N. In AlGaN/GaN heterostruct
 ure device\, a wide bandgap material (AlGaN) is grown over narrow bandgap 
 (GaN) material resulting formation of 2DEG (two-dimensional electron gas) 
 at the heterointerface due to discontinuity of conduction energy bandgap h
 aving electron density of 10 13 -10 14 cm -2 . The ultra-thin layer of 2DE
 G acts as channel in the heterostructure device with reduced scattering re
 sulting the birth of high electron mobility transistor(HEMT). In AlGaN/GaN
  heterostructure\, the polarization induced 2DEG makes the HEMT to operate
  in depletion mode (D-mode) inherently. However\, high performance enhance
 ment mode (E-mode) HEMT is always needed in power electronic applications 
 for fail-safe operation and designing E-mode HEMT is a great challenge. Th
 e E-mode HEMT can be designed by suitable device fabrication techniques wi
 th novel gate-recessed structures. Hence\, due to the unique material prop
 erties\, AlGaN/GaN HEMT has wide applications in power electronics such as
  power amplifier (PA)\, low noise amplifier (LNA)\, Mixer and converter ci
 rcuits (AC-DC\, DC-DC) etc. Power electronics is the back bone of renewabl
 e energy conversions. Silicon based power devices such as DMOS and IGBT ha
 ve already reached their performance limit. Hence\, GaN is used here to fu
 rther reduce energy loss during power conversions. GaN HEMTs have several 
 other power electronics systems applications such as laptop power adapter\
 , solar cell micro-inverter\, power module for EV charging stations and da
 ta center server power module etc. Similarly\, it has wide applications in
  microwave/mm-wave device applications in mobile base stations and satelli
 te communications etc. Due to high radiation resistance GaN HEMT is also h
 ighly suitable in space applications.</p><br /><br />Agenda: <br /><p>4:45
  PM - Refreshments (Pizza) and Networking</p>\n<p>4:30PM-5:30 PM: Talk by 
 Dr. T. R. Lenka\, Assistant Professor\, Electronics and Communication Engi
 neering\, National Institute of Technology Silchar\, Assam\, INDIA</p>\n<p
 >You do not have to be an IEEE Member to attend. Refreshmen is free for al
 l attendess. Please invite your friends and colleagues to take advantages 
 of this Invited Distinguished Lecture.</p>
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