BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20190310T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20191103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20190809T043434Z UID:AA70DDD7-369F-4762-9FEF-262C96325E76 DTSTART;TZID=America/Los_Angeles:20190808T150000 DTEND;TZID=America/Los_Angeles:20190808T163000 DESCRIPTION:A semiconductor memory is a ubiquitous component of all electro nic systems\, coupled with a microprocessor for computing or integrated to store information. As the semiconductor ecosystem expands to such areas l ike mobile computing\, artificial intelligence (AI)\, Big Data\, Internet- of-Things (IOT)\, life science and healthcare applications\, the prevalenc e of these markets largely depend on memory innovations. This has propelle d increasing efforts in researching\, developing\, and commercializing eme rging memory technologies\, such as PCM (phase-change memory\, or PRAM)\, MRAM (magnetoresistive RAM)\, RRAM (resistive RAM)\, and FRAM (ferroelectr ic RAM). This presentation overviews these emerging memories from the pers pectives of device\, design\, integration\, and application. Also covered is the prospect of embedding these memories into advanced integrated circu its. By far\, all emerging memory prototypes and products are built upon r elatively mature CMOS technologies such as 22nm and 28nm. For the applicat ions that have traditionally relied on embedded Flash\, these nodes are st ill advanced\, and such memories can serve IOT\, security\, automotive\, a nd some machine learning applications competitively. However\, emerging me mories have not entered the domain of advanced logic nodes (7nm already in production) and have yet to be proven as a sustainable technology for per vasive applications. This transition necessitates the memory attributes th at must go beyond the specifications of present product offerings. A key c hallenge is to achieve a combination of high speed and high endurance for high-density arrays compatible with sub-10nm CMOS devices. This requires d eeply scaled memory elements with fast switching at low current and high d ielectric barrier reliability. Efforts are also desired for custom memorie s which can be tailored in various densities and form factors for heteroge neously partitioned systems.\n\nSan Diego\, California\, United States LOCATION:San Diego\, California\, United States ORGANIZER:alvin.loke@alumni.stanford.edu SEQUENCE:1 SUMMARY:Emerging Memories and Pathfinding for the Era of Sub-10nm System-on -Chip URL;VALUE=URI:https://events.vtools.ieee.org/m/201786 X-ALT-DESC:Description: <br /><p>A semiconductor memory is a ubiquitous com ponent of all electronic systems\, coupled with a microprocessor for compu ting or integrated to store information. As the semiconductor ecosystem ex pands to such areas like mobile computing\, artificial intelligence (AI)\, Big Data\, Internet-of-Things (IOT)\, life science and healthcare applica tions\, the prevalence of these markets largely depend on memory innovatio ns. This has propelled increasing efforts in researching\, developing\, an d commercializing emerging memory technologies\, such as PCM (phase-change memory\, or PRAM)\, MRAM (magnetoresistive RAM)\, RRAM (resistive RAM)\, and FRAM (ferroelectric RAM). This presentation overviews these emerging m emories from the perspectives of device\, design\, integration\, and appli cation. Also covered is the prospect of embedding these memories into adva nced integrated circuits. By far\, all emerging memory prototypes and prod ucts are built upon relatively mature CMOS technologies such as 22nm and 2 8nm. For the applications that have traditionally relied on embedded Flash \, these nodes are still advanced\, and such memories can serve IOT\, secu rity\, automotive\, and some machine learning applications competitively. However\, emerging memories have not entered the domain of advanced logic nodes (7nm already in production) and have yet to be proven as a sustainab le technology for pervasive applications. This transition necessitates the memory attributes that must go beyond the specifications of present produ ct offerings. A key challenge is to achieve a combination of high speed an d high endurance for high-density arrays compatible with sub-10nm CMOS dev ices. This requires deeply scaled memory elements with fast switching at l ow current and high dielectric barrier reliability. Efforts are also desir ed for custom memories which can be tailored in various densities and form factors for heterogeneously partitioned systems.</p> END:VEVENT END:VCALENDAR