BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:US/Pacific BEGIN:DAYLIGHT DTSTART:20200308T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20191103T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20201030T174844Z UID:4D417307-9538-467B-AFCD-C0B61D3D6466 DTSTART;TZID=US/Pacific:20191115T100000 DTEND;TZID=US/Pacific:20191115T113000 DESCRIPTION:Prof. Sorin Voinigescu\nUniversity of Toronto\nDepartment of El ectrical and Computer Engineering\nToronto\, Ontario\, Canada\n\nAbstract: This presentation will discuss the fundamental concepts and the feasibili ty of high-temperature (2-4 K) Si and SiGe electron/hole-spin qubits and q ubit integrated circuits (ICs) in commercial 22nm FDSOI CMOS technology\,. The beneficial aspects of the SiGe channel hole-spin qubit will be emphas ized in comparison with its silicon-only electron-spin counterpart. It is also shown that\, at 2 K\, MOSFETs and cascodes can be operated as quantum dots in the subthreshold region\, while behaving as classical MOSFETs and cascodes in the saturation region\, suitable for qubits and mm-wave mixed -signal processing circuits\, respectively. Challenges in the design and t esting of quantum processor units monolithically integrated with readout a nd mm-wave spin control electronics in commercial 22nm FDSOI CMOS technolo gy\, will also be covered. Finally\, I will present measurements for full technology characterization at cryogenic temperatures up to 67 GHz.\n\nSpe aker Bio: Sorin P. Voinigescu is a Professor in the Electrical and Compute r Engineering Department at the University of Toronto where he holds the S tanley Ho Chair in Microelectronics and is the Director of the VLSI Resear ch Group. He is an IEEE Fellow and an expert on millimeter-wave and 100+Gb /s integrated circuits and atomic-scale semiconductor device technologies. He obtained his PhD degree in Electrical and Computer Engineering from th e University of Toronto in 1994 and his M.Sc Degree in Electronics and Tel ecommunications from the Politechnical Institute of Bucharest in 1984.\n\n Speaker(s): Sorin Voinigescu\, \n\nAgenda: \n10:00-10:30 AM Arrival & Netw orking\n10:15-11:30 AM Talk\, followed by Q&A\n\nBldg: OC Plaza\, 2575 McC abe Way\, Irvine \, California\, United States\, 92614 LOCATION:Bldg: OC Plaza\, 2575 McCabe Way\, Irvine \, California\, United S tates\, 92614 ORGANIZER:info@nanomems-research.com SEQUENCE:1 SUMMARY:Towards monolithic quantum computing processors in production FDSOI CMOS technology URL;VALUE=URI:https://events.vtools.ieee.org/m/206488 X-ALT-DESC:Description: <br /><p>&nbsp\;</p>\n<p><strong>Prof. Sorin Voinig escu</strong><br />University of Toronto<br />Department of Electrical and Computer Engineering<br />Toronto\, Ontario\, Canada</p>\n<p><strong>Abst ract:</strong> This presentation will discuss the fundamental concepts and the feasibility of high-temperature (2-4 K) Si and&nbsp\;SiGe electron/ho le-spin qubits and qubit integrated circuits (ICs) in commercial 22nm FDSO I CMOS technology\,. The&nbsp\;beneficial aspects of the SiGe channel hole -spin qubit will be emphasized in comparison with its silicon-only electro n-spin&nbsp\;counterpart. It is also shown that\, at 2 K\, MOSFETs and cas codes can be operated as quantum dots in the subthreshold region\,&nbsp\;w hile behaving as classical MOSFETs and cascodes in the saturation region\, suitable for qubits and mm-wave mixed-signal&nbsp\;processing circuits\, respectively. Challenges in the design and testing of quantum processor un its monolithically integrated&nbsp\;with readout and mm-wave spin control electronics in commercial 22nm FDSOI CMOS technology\, will also be covere d.&nbsp\;Finally\, I will present measurements for full technology charact erization at cryogenic temperatures up to 67 GHz.</p>\n<p><strong>Speaker Bio</strong>: Sorin P. Voinigescu is a Professor in the Electrical and Com puter Engineering Department at the University of&nbsp\;Toronto where he h olds the Stanley Ho Chair in Microelectronics and is the Director of the V LSI Research Group. He is an&nbsp\;IEEE Fellow and an expert on millimeter -wave and 100+Gb/s integrated circuits and atomic-scale semiconductor devi ce&nbsp\;technologies. He obtained his PhD degree in Electrical and Comput er Engineering from the University of Toronto in 1994 and&nbsp\;his M.Sc D egree in Electronics and Telecommunications from the Politechnical Institu te of Bucharest in 1984.&nbsp\;</p><br /><br />Agenda: <br /><p>10:00-10:3 0 AM Arrival &amp\; Networking<br />10:15-11:30 AM Talk\, followed by Q&am p\;A</p> END:VEVENT END:VCALENDAR