BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Canada/Eastern BEGIN:DAYLIGHT DTSTART:20200308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20191103T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20191203T200824Z UID:5ADA047F-A71A-4E6C-AC67-6CD6FC8CFBE0 DTSTART;TZID=Canada/Eastern:20191203T130000 DTEND;TZID=Canada/Eastern:20191203T140000 DESCRIPTION:The electrical power consumed in data transmission systems is n ow hampering efforts to further increase the speed and capacity at various scales\, ranging from data centers to microprocessors. Optical interconne cts employing an ultralow energy directly modulated lasers will play a key role in reducing the power consumption. Since a laser’s operating energ y is proportional to the size of its active volume\, developing high-perfo rmance lasers with a small cavity is important. For this purpose\, we have developed membrane DFB and photonic crystal (PhC) lasers\, in which activ e regions are buried with InP layer. Thanks to the reduction of cavity siz e and the increase in optical confinement factor\, we have achieved extrem ely small operating energy and demonstrated 4.4-fJ/bit operating energy by employing wavelength-scale PhC cavity. Reduction of the cost is also impo rtant issue because huge number of transmitters are required for short dis tance optical links. For this purpose\, Si photonics technology is expecte d to be a potential solution because it can provide large-scale phonic int egrated circuits (PICs)\, which can reduce the assembly cost compared with transmitters constructed by discrete devices. Therefore\, heterogeneous i ntegration of III-V compound semiconductors and Si has attracted much atte ntion. For fabricating these devices\, we have developed wafer-scale fabri cation procedure that employs regrowth of III-V compound semiconductors on directly bonded thin InP template on SiO2/Si substrate. A key to realize high-quality epitaxial layer is total thickness\, which must be below the critical thickness\, typically 430 nm. Thus\, membrane structure is quite suitable for heterogeneous integration. I will talk about our recent progr ess\, focusing on ultralow-power-consumption directly modulated lasers and their photonic integrated circuit. I will also describe progress in heter ogeneous integration of these lasers and Si photonics devices.\n\nSpeaker( s): Dr. Shinji Matsuo\, \n\nRoom: 233\, Bldg: Advanced Research Complex\, 25 Templeton Street\, University of Ottawa\, Ottawa\, Ontario\, Canada\, K 1N 6N5 LOCATION:Room: 233\, Bldg: Advanced Research Complex\, 25 Templeton Street\ , University of Ottawa\, Ottawa\, Ontario\, Canada\, K1N 6N5 ORGANIZER:khinzer@uottawa.ca SEQUENCE:3 SUMMARY:Advanced semiconductor lasers: Ultra-low operating energy and heter ogeneous integration with Si photonics devices URL;VALUE=URI:https://events.vtools.ieee.org/m/209144 X-ALT-DESC:Description: <br /><p>The electrical power consumed in data tran smission systems is now hampering efforts to further increase the speed an d capacity at various scales\, ranging from data centers to microprocessor s. Optical interconnects employing an ultralow energy directly modulated l asers will play a key role in reducing the power consumption. Since a lase r&rsquo\;s operating energy is proportional to the size of its active volu me\, developing high-performance lasers with a small cavity is important. For this purpose\, we have developed membrane DFB and photonic crystal (Ph C) lasers\, in which active regions are buried with InP layer. Thanks to t he reduction of cavity size and the increase in optical confinement factor \, we have achieved extremely small operating energy and demonstrated 4.4- fJ/bit operating energy by employing wavelength-scale PhC cavity. Reductio n of the cost is also important issue because huge number of transmitters are required for short distance optical links. For this purpose\, Si photo nics technology is expected to be a potential solution because it can prov ide large-scale phonic integrated circuits (PICs)\, which can reduce the a ssembly cost compared with transmitters constructed by discrete devices. T herefore\, heterogeneous integration of III-V compound semiconductors and Si has attracted much attention. For fabricating these devices\, we have d eveloped wafer-scale fabrication procedure that employs regrowth of III-V compound semiconductors on directly bonded thin InP template on SiO2/Si su bstrate. A key to realize high-quality epitaxial layer is total thickness\ , which must be below the critical thickness\, typically 430 nm. Thus\, me mbrane structure is quite suitable for heterogeneous integration.&nbsp\; I will talk about our recent progress\, focusing on ultralow-power-consumpt ion directly modulated lasers and their photonic integrated circuit.&nbsp\ ; I will also describe progress in heterogeneous integration of these lase rs and Si photonics devices.</p> END:VEVENT END:VCALENDAR