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DTSTART:20200329T030000
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DTSTART:20191027T020000
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BEGIN:VEVENT
DTSTAMP:20191217T072417Z
UID:D2ADB714-26B0-4DFD-A827-3086D42CB687
DTSTART;TZID=Europe/Zurich:20191202T101500
DTEND;TZID=Europe/Zurich:20191202T110000
DESCRIPTION:The superior material properties of wide-bandgap (WBG) power se
 miconductors enable them to switch faster\, block higher voltages\, have h
 igher current densities\, and operate in harsh environments. With these fe
 atures\, WBG power semiconductors have the potential to advance a number o
 f application areas. Such areas include electrified transportation systems
 \, wind and solar\, medium-voltage drives\, and advanced distribution syst
 ems. However\, the high- speed\, high-voltage\, high-density\, and high-te
 mperature benefits of these unique switches are also the primary challenge
 s. The high-speed switching causes significant electromagnetic interferenc
 e\, the high-voltage ratings result in increased electric field strength\,
  the high current density produces high heat flux\, and the high-temperatu
 re capability reduces the reliability of the surrounding components. Prese
 nt power module packages are unable to address these challenges\, and\, as
  a result\, are limiting the performance of these high-performance switche
 s. New techniques and materials are needed to develop packages that will e
 nable the full potential of these WBG devices to shine through. This prese
 ntation will provide an overview of the major challenges associated with p
 ackaging WBG power semiconductors\, and methods to overcome these barriers
 .\n\nSpeaker(s): Prof. Christina DiMarino\, \n\nRoom: 114\, Bldg: ELH\, EP
 FL STI IEL PEL\, Lausanne\, Switzerland\, Switzerland\, 1015
LOCATION:Room: 114\, Bldg: ELH\, EPFL STI IEL PEL\, Lausanne\, Switzerland\
 , Switzerland\, 1015
ORGANIZER:drazen.dujic@epfl.ch
SEQUENCE:1
SUMMARY:Extracting the Full Potential of Wide-Bandgap Power Semiconductors
URL;VALUE=URI:https://events.vtools.ieee.org/m/210788
X-ALT-DESC:Description: <br /><div class="page" title="Page 1">\n<div class
 ="layoutArea">\n<div class="column">\n<p>The superior material properties 
 of wide-bandgap (WBG) power semiconductors enable them to switch faster\, 
 block higher voltages\, have higher current densities\, and operate in har
 sh environments. With these features\, WBG power semiconductors have the p
 otential to advance a number of application areas. Such areas include elec
 trified transportation systems\, wind and solar\, medium-voltage drives\, 
 and advanced distribution systems. However\, the high- speed\, high-voltag
 e\, high-density\, and high-temperature benefits of these unique switches 
 are also the primary challenges. The high-speed switching causes significa
 nt electromagnetic interference\, the high-voltage ratings result in incre
 ased electric field strength\, the high current density produces high heat
  flux\, and the high-temperature capability reduces the reliability of the
  surrounding components. Present power module packages are unable to addre
 ss these challenges\, and\, as a result\, are limiting the performance of 
 these high-performance switches. New techniques and materials are needed t
 o develop packages that will enable the full potential of these WBG device
 s to shine through. This presentation will provide an overview of the majo
 r challenges associated with packaging WBG power semiconductors\, and meth
 ods to overcome these barriers.</p>\n</div>\n</div>\n</div>
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