BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Calcutta BEGIN:STANDARD DTSTART:19451014T230000 TZOFFSETFROM:+0630 TZOFFSETTO:+0530 TZNAME:IST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20200311T082039Z UID:91DAB33B-5CD4-40FF-B72E-6D815CFA9456 DTSTART;TZID=Asia/Calcutta:20191021T160000 DTEND;TZID=Asia/Calcutta:20191021T170000 DESCRIPTION:Date: 21 October 2019\n\nTime: 04:00 PM to 05:00 PM\n\nSpeaker: Dr. D. Krishnamurthy\, Novel Crystal Technology Inc.\, JAPAN and SHANAN I nnovetek Ventures\, Chennai\, India\n\nTitle: Ga2O3: Properties\, Prospect s\, and Progress\n\nAbstract: Ga2O3 was attracting researchers as a promis ing wide bandgap semiconductor material for several years owing to its exc ellent material properties for applications in high power and high voltage electronics. The bandgap (4.6 eV) and the expected Baliga’s figure of merit (FOM) of Ga2O3 are much larger than those of SiC and GaN. Ever since “Tamura Co. Ltd\, Japan” made possible the availability of large-size \, high-quality Ga2O3 wafers (manufacturing them from a single-crystal bul k synthesized by melt–growth methods) [1]\, the research activities on G a2O3 based LEDs and Power devices have really taken off to a high degree i n the recent years. The initial research works were focused on the realiza tion of GaN-based high power LEDs on the Ga2O3 substrates\, replacing the high cost GaN and SiC substrates. However\, the first demonstration of MES FETs [2] and MOSFETs [3] by Higashiwaki et al of National Institute of Inf ormation and Communications Technology\, (NICT)\, Japan\, has attracted tr emendous attention paving way for world-wide research start-ups on the pow er electronics applications. The researchers working on this material beli eve it to be very much suitable for extreme environment applications. Of c ourse\, the issue of poor thermal conductivity needs to be aggressively ad dressed. Commercial devices based on Ga2O3 are expected to be produced wit hin the next couple of years.\n\nA three-pronged approach of growing the G a2O3 substrates\, optimizing the epi-growth of suitable device structures on the available substrates\, and fabrication of the devices using the com mercially available epi-wafers will result in significant contribution by researchers on this highly potential material. The device fabrication usin g the commercially available device-ready epi-wafers will boost the advanc ements of achieving the full prospects of this material. In the present ta lk\, it is proposed to present the salient features of the Ga2O3\, along w ith an overview of the current world-wide research activities based on the Ga2O3 substrates.\n\nReferences:\n\n- “US patent- US 20140352604 A1”\ , “Method for growing β- Ga2O3 single crystal”\, Tamura Corporation\, Koha Co.\, Ltd.\, Japan\,\n- Higashiwaki et al\, “Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β- Ga2O3 (010) substrates”\, Appl. Phys. Lett. 100\, 013504 (2012)\n- Higashiwaki et al\, “Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect tr ansistors on β- Ga2O3 (010) substrates and temperature dependence of thei r device characteristics”\, Appl. Phys. Lett. 103\, 123511 (2013)\n\nkan pur\, Uttar Pradesh\, India\, 208016 LOCATION:kanpur\, Uttar Pradesh\, India\, 208016 ORGANIZER:amitkver@iitk.ac.in SEQUENCE:0 SUMMARY:IEEE EDS Seminar on " Ga2O3: Properties\, Prospects\, and Progress. " URL;VALUE=URI:https://events.vtools.ieee.org/m/226754 X-ALT-DESC:Description: <br /><p><u>Date</u>: <strong>21 October 2019</stro ng></p>\n<p><u>Time</u>: <strong>04:00 PM to 05:00 PM</strong></p>\n<p><st rong><u>Speaker</u></strong><strong>:</strong> Dr. D. Krishnamurthy\, Nove l Crystal Technology Inc.\, JAPAN and SHANAN Innovetek Ventures\, Chennai\ , India</p>\n<p><strong>&nbsp\;</strong></p>\n<p><strong><u>Title</u></str ong><strong>: </strong>Ga2O3: Properties\, Prospects\, and Progress</p>\n< p><u>Abstract</u>: Ga2O3 was attracting researchers as a promising wide ba ndgap semiconductor material for several years owing to its excellent mate rial properties for applications in high power and high voltage electronic s. The bandgap (4.6 eV) and the expected Baliga&rsquo\;s figure of merit (FOM) of Ga2O3 are much larger than those of SiC and GaN. Ever since &ldqu o\;Tamura Co. Ltd\, Japan&rdquo\; made possible the availability of large- size\, high-quality Ga2O3 wafers (manufacturing them from a single-crystal bulk synthesized by melt&ndash\;growth methods) [1]\, the research activi ties on Ga2O3 based LEDs and Power devices have really taken off to a high degree in the recent years. The initial research works were focused on th e realization of GaN-based high power LEDs on the Ga2O3 substrates\, repla cing the high cost GaN and SiC substrates. However\, the first demonstrati on of MESFETs [2] and MOSFETs [3] by Higashiwaki et al of National Institu te of Information and Communications Technology\, (NICT)\, Japan\, has att racted tremendous attention paving way for world-wide research start-ups o n the power electronics applications. The researchers working on this mate rial believe it to be very much suitable for extreme environment applicati ons. Of course\, the issue of poor thermal conductivity needs to be aggres sively addressed. Commercial devices based on Ga2O3 are expected to be pro duced within the next couple of years.</p>\n<p>&nbsp\;</p>\n<p>A three-pro nged approach of growing the Ga2O3 substrates\, optimizing the epi-growth of suitable device structures on the available substrates\, and fabricatio n of the devices using the commercially available epi-wafers will result i n significant contribution by researchers on this highly potential materia l. The device fabrication using the commercially available device-ready ep i-wafers will boost the advancements of achieving the full prospects of th is material. In the present talk\, it is proposed to present the salient f eatures of the Ga2O3\, along with an overview of the current world-wide re search activities based on the Ga2O3 substrates.</p>\n<p>&nbsp\;</p>\n<p>R eferences:</p>\n<p>&nbsp\;</p>\n<ol>\n<li>&ldquo\;US patent- US 2014035260 4 A1&rdquo\;\, &ldquo\;Method for growing &beta\;- Ga2O3 single crystal&rd quo\;\, Tamura Corporation\, Koha Co.\, Ltd.\, Japan\,</li>\n<li>Higashiwa ki et al\, &ldquo\;Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal &beta\;- Ga2O3 (010) substrates&rdquo\;\, Ap pl. Phys. Lett. 100\, 013504 (2012)</li>\n<li>Higashiwaki et al\, &ldquo\; Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on &beta\;- Ga2O3 (010) substrates and temperature dependence of their devic e characteristics&rdquo\;\, Appl. Phys. Lett. 103\, 123511 (2013)</li>\n</ ol> END:VEVENT END:VCALENDAR