BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Canada/Eastern BEGIN:DAYLIGHT DTSTART:20200308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20201101T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20210131T193023Z UID:7DFB8D4B-34D0-4747-9F35-7591A65130CE DTSTART;TZID=Canada/Eastern:20200902T110000 DTEND;TZID=Canada/Eastern:20200902T120000 DESCRIPTION:This talk is meant to review some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors\, and their impact on microwave circuit design. Because o f their nowadays importance\, a particular attention will be payed to appl ications on high power amplifiers for mobile wireless infrastructure and p ulsed radar applications.\n\nFor that\, the talk will start by recollectin g the most common model formulations adopted for the various levels of RF engineering\, from the device level (physics) to the transistor (circuit) and amplifier (system) level. Starting by the Shockley-Read-Hall capture a nd emission processes we will be able to understand one of the fundamental signatures of trapping effects\, the significantly different charge and d ischarging time constants\, and its impact on power amplifier nonlinear di stortion behavior. Then\, some widely adopted approaches of the channel cu rrent transients’ characterization are addressed and the talk concludes by presenting some illustrative cases of application to RF high power ampl ifiers.\n\nPlease use the link in the registration section to sign up for the event.\n\n[The webex link for the event](https://ieeemeetings.webex.co m/ieeemeetings/onstage/g.php?MTID=e93242955525edb85686e6b35ff2842f8)\n\nTh e password for the event is 0000\n\nSpeaker(s): Prof. José C. Pedro\, \n \nVirtual: https://events.vtools.ieee.org/m/238482 LOCATION:Virtual: https://events.vtools.ieee.org/m/238482 ORGANIZER:aabdella.ieee@gmail.com SEQUENCE:16 SUMMARY:IEEE OTTAWA AP/MTT WEBINAR: Characterization and Modeling of GaN HE MT Trapping Effects for Microwave Circuit Design URL;VALUE=URI:https://events.vtools.ieee.org/m/238482 X-ALT-DESC:Description: <br /><p>&nbsp\;</p>\n<p>This talk is meant to revi ew some recent advancements achieved on the characterization and modelling of the trapping effects felt in GaN HEMT transistors\, and their impact o n microwave circuit design. Because of their nowadays importance\, a parti cular attention will be payed to applications on high power amplifiers for mobile wireless infrastructure and pulsed radar applications.</p>\n<p>For that\, the talk will start by recollecting the most common model formulat ions adopted for the various levels of RF engineering\, from the device le vel (physics) to the transistor (circuit) and amplifier (system) level. St arting by the Shockley-Read-Hall capture and emission processes we will be able to understand one of the fundamental signatures of trapping effects\ , the significantly different charge and discharging time constants\, and its impact on power amplifier nonlinear distortion behavior. Then\, some w idely adopted approaches of the channel current transients&rsquo\; charact erization are addressed and the talk concludes by presenting some illustra tive cases of application to RF high power amplifiers.</p>\n<p class="m_-3 66764601891485765paragraph">&nbsp\;</p>\n<p class="m_-366764601891485765pa ragraph"><span class="m_-366764601891485765normaltextrun">Please use the l ink in the registration section to<span style="text-decoration: underline\ ;">&nbsp\;<strong>sign up</strong></span>&nbsp\;for the event.&nbsp\;</spa n></p>\n<p><a href="https://ieeemeetings.webex.com/ieeemeetings/onstage/g. php?MTID=e93242955525edb85686e6b35ff2842f8">The webex link for the event</ a>&nbsp\;</p>\n<p>The password for the event is 0000</p> END:VEVENT END:VCALENDAR