BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Canada/Eastern BEGIN:DAYLIGHT DTSTART:20200308T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20201101T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20201030T155812Z UID:7C9E7EAC-DA8E-4A42-8C31-E675808B3D7E DTSTART;TZID=Canada/Eastern:20201028T140000 DTEND;TZID=Canada/Eastern:20201028T160000 DESCRIPTION:1. Recent progress in new narrow bandgap material discovery su ch as black phosphorus (BP) and perovskite chalcogenide materials includin g barium titanium sulfide (BaTiS3) open the door to a new generation of ph otonic materials for mid-infrared sensing and imaging. High mobility\, nar row gap BP and BaTiS3 thin film have shown promising properties for mid-in frared and long wavelength infrared optoelectronics. Furthermore\, their l ow-symmetry crystal structures allow for the realization of polarization s ensitive electro-optical detection in the mid-infrared range. Here\, I wil l present our work in understanding the fundamental electronic and optical properties of BP and BaTiS3\, including using the scanning ultrafast elec tron microscopy technique to obtain spatial-temporal imaging of the real-t ime carrier dynamics. Our recent demonstration of polarization sensitive m id-IR detector and the development of mid-IR focal-plane array will also b e presented. Technological potential and future impacts of these novel mid -IR materials and devices will be discussed.\n\n2. Low dimensional materia ls offer a rich array of unique physical properties that are promising for developing a new generation of electronic devices beyond von-Neumann comp uting hardware. In this talk\, I will discuss our recent work in developin g atomically-thin resistive memory devices based on low dimensional materi als that can achieve ultralow-power operation at the sub-femtojoule level. Our work on developing low dimensional material based phase transition os cillatory neuronal devices will also be discussed. Due to their atomically confined geometry\, such oscillatory devices exhibit pronounced stochasti c feature with dynamically tunable distribution parameters closely resembl ing biological neuron spiking. Furthermore\, the demonstration of the low power hardware implementation of new computing schemes such as Boltzmann m achine and stochastic Hopfield network based on these novel devices will b e presented.\n\nCo-sponsored by: IEEE-NTC\n\nSpeaker(s): Prof. Han Wang\, \n\nMontreal\, Quebec\, Canada\, Virtual: https://events.vtools.ieee.org/m /245498 LOCATION:Montreal\, Quebec\, Canada\, Virtual: https://events.vtools.ieee.o rg/m/245498 ORGANIZER:moein.noferesti@ieee.org SEQUENCE:7 SUMMARY:1. Black Phosphorus and Perovskite Chalcogenide Materials for mid-I R Detection and Imaging 2. Emerging Low Dimensional Material Electronic De vices for Memory and Computing URL;VALUE=URI:https://events.vtools.ieee.org/m/245498 X-ALT-DESC:Description: <br /><p><strong>&nbsp\; &nbsp\;</strong></p>\n<p a lign=" justify"><strong>&nbsp\; &nbsp\; 1.&nbsp\;</strong>&nbsp\;Recent pr ogress in new narrow bandgap material discovery such as black phosphorus ( BP) and perovskite chalcogenide materials including barium titanium sulfid e (BaTiS3) open the door to a new generation of photonic materials for mid -infrared sensing and imaging. High mobility\, narrow gap BP and BaTiS3 th in film have shown promising properties for mid-infrared and long waveleng th infrared optoelectronics. Furthermore\, their low-symmetry crystal stru ctures allow for the realization of polarization sensitive electro-optical detection in the mid-infrared range. Here\, I will present our work in un derstanding the fundamental electronic and optical properties of BP and Ba TiS3\, including using the scanning ultrafast electron microscopy techniqu e to obtain spatial-temporal imaging of the real-time carrier dynamics. Ou r recent demonstration of polarization sensitive mid-IR detector and the d evelopment of mid-IR focal-plane array will also be presented. Technologic al potential and future impacts of these novel mid-IR materials and device s will be discussed.</p>\n<p align=" justify"><strong>&nbsp\; &nbsp\; 2.&n bsp\;</strong>Low dimensional materials offer a rich array of unique physi cal properties that are promising for developing a new generation of elect ronic devices beyond von-Neumann computing hardware. In this talk\, I will discuss our recent work in developing atomically-thin resistive memory de vices based on low dimensional materials that can achieve ultralow-power o peration at the sub-femtojoule level. Our work on developing low dimension al material based phase transition oscillatory neuronal devices will also be discussed. Due to their atomically confined geometry\, such oscillatory devices exhibit pronounced stochastic feature with dynamically tunable di stribution parameters closely resembling biological neuron spiking. Furthe rmore\, the demonstration of the low power hardware implementation of new computing schemes such as Boltzmann machine and stochastic Hopfield networ k based on these novel devices will be presented.<br /><br /></p> END:VEVENT END:VCALENDAR