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DTSTART:20201101T010000
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DTSTAMP:20210122T000249Z
UID:074BF398-0AFA-4A6E-9B1D-B255CEC0AC4B
DTSTART;TZID=US/Eastern:20210121T120000
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DESCRIPTION:Ever since the proposal and demonstration of quantum dots in 19
 80 by Efros’ brothers and Dr. Ekimov\, the relentless progress of nanote
 chnology has been unstoppable. And nowhere this progress is more evident a
 s in the Si Very Large Scale Integrated Circuits (VLSI) technology. The mi
 nimum feature sizes of the Si VLSI reduced to 7 nm in 2017 with plans for 
 the 5 nm and even 3 nm technology. With over 20 billion transistors on a s
 quare cm chip in 2018 and the expectations of reaching 1 trillion transist
 ors on chip in the near future\, the complexity of the VLSI\nfabrication p
 rocesses and the commensurate costs are overwhelming. The quality of the c
 rystalline silicon becomes crucial to guarantee an acceptable yield\, and 
 the device physics involved is new and counter-intuitive. But industrial s
 ilicon nanotechnology is not limited to crystalline materials. Amorphous a
 nd polysilicon Thin Film Transistors fabricated on glass or even on cloth 
 or paper enable integrated circuits with 50 nm tolerances over square mete
 r sizes. These technologies have become disruptive with applications rangi
 ng from entertainment to communications dubbed 5G and Beyond 5G\, to robot
 ics and driverless cars\, and to the new electronic and communication warf
 are. This talk will focus on the Computer Aided Design compact models requ
 ired to support the design\, characterization\, and parameter extraction f
 or Si VLSI and a-Si and polysilicon integrated circuits\, and on the new p
 atent pending VLSI test techniques needed to identify and diagnose bad or 
 faked VLSI chips.\n\nCo-sponsored by: Baltimore Section Jt Chapter\, ED15/
 SSC37 \n\nSpeaker(s): Prof. Michael Shur\, \n\nVirtual: https://events.vto
 ols.ieee.org/m/247990
LOCATION:Virtual: https://events.vtools.ieee.org/m/247990
ORGANIZER:tonyguo@ieee.org
SEQUENCE:15
SUMMARY:State-of-the-Art Silicon Very Large Scale Integrated Circuits: Indu
 strial Face of Nanotechnology
URL;VALUE=URI:https://events.vtools.ieee.org/m/247990
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;Ever since the proposal and demonstration 
 of quantum dots in 1980 by Efros&amp;rsquo\; brothers and Dr. Ekimov\, the rel
 entless progress of nanotechnology has been unstoppable. And nowhere this 
 progress is more evident as in the Si Very Large&amp;nbsp\;Scale Integrated Ci
 rcuits (VLSI) technology. The minimum feature sizes of the Si&amp;nbsp\;VLSI r
 educed to 7 nm in 2017 with plans for the 5 nm and even 3 nm technology.&amp;n
 bsp\;With over 20 billion transistors on a square cm chip in 2018 and the 
 expectations of&amp;nbsp\;reaching 1 trillion transistors on chip in the near 
 future\, the complexity of the VLSI&lt;br /&gt;fabrication processes and the com
 mensurate costs are overwhelming. The quality of&amp;nbsp\;the crystalline sil
 icon becomes crucial to guarantee an acceptable yield\, and the&amp;nbsp\;devi
 ce physics involved is new and counter-intuitive. But industrial silicon n
 anotechnology is not limited to crystalline materials. Amorphous and polys
 ilicon Thin Film Transistors fabricated on glass or even on cloth or paper
  enable integrated circuits with 50 nm tolerances over square meter sizes.
  These technologies have&amp;nbsp\;become disruptive with applications ranging
  from&amp;nbsp\;entertainment to communications dubbed 5G and Beyond 5G\, to r
 obotics and&amp;nbsp\;driverless cars\, and to the new electronic and communic
 ation&amp;nbsp\;warfare. This talk will focus on the Computer Aided Design com
 pact models&amp;nbsp\;required to support the design\, characterization\, and 
 parameter extraction for Si&amp;nbsp\;VLSI and a-Si and polysilicon integrated
  circuits\, and on the new patent pending VLSI test techniques needed to i
 dentify and diagnose bad or faked VLSI chips.&lt;/p&gt;
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