BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Kolkata BEGIN:STANDARD DTSTART:19451014T230000 TZOFFSETFROM:+0630 TZOFFSETTO:+0530 TZNAME:IST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20210927T055630Z UID:731F53B0-8F28-4411-84CA-44E4BA2A9B9C DTSTART;TZID=Asia/Kolkata:20210218T163000 DTEND;TZID=Asia/Kolkata:20210218T180000 DESCRIPTION:Abstract:\n\nThe introduction of two-dimensional (2D) layered m aterials in the structure of microelectronic devices is a promising strate gy to enhance and extend their performance. Several 2D layered metallic an d semiconducting materials (e.g. graphene and MoS2) have been successfully implemented in different types of devices. However\, their interaction wi th traditional dielectrics (e.g. SiO2\, HfO2\, Al2O3) is very poor because 2D materials do not have dangling bonds\, leading to a highly defective i nterface. To solve this problem\, the most feasible solution is to couple graphene and MoS2 with 2D layered dielectrics\, so that they can form a cl ean van der Waals interface. In this context\, h-BN is a 2D layered dielec tric (with a direct band gap of ~5.9 eV) in which boron and nitrogen atoms arrange in a sp2 hexagonal lattice by covalent bonding\, whereas the laye rs stick to each other by van der Waals attraction. Given its high in-plan e mechanical strength (500 N/m)\, large thermal conductivity (600 Wm-1K-1) \, and high chemical stability (up to 1500 ºC in air)\, h-BN has attracte d much attention as dielectric. In this seminar\, I will present our studi es on the use of h-BN as dielectric in microelectronic devices\, and our m ost recent progress on the wafer-scale integration of memristive crossbar arrays made of 2D layered materials. By using chemical vapor deposited mul tilayer hexagonal boron nitride (h-BN) sheets\, we have fabricated metal/h -BN/metal memristive crossbar arrays that exhibit\, not only outstanding e lectrical characteristics\, but also a high yield and low device-to-device variability. These findings may accelerate the use of 2D materials for bu ilding wafer-scale and high-density electronic memories and artificial neu ral networks.\n\nSpeaker(s): Mario Lanza\, \n\nVirtual: https://events.vto ols.ieee.org/m/262112 LOCATION:Virtual: https://events.vtools.ieee.org/m/262112 ORGANIZER:ssahay@iitk.ac.in SEQUENCE:1 SUMMARY:IEEE EDS Distinguished Lecture by Prof. Mario Lanza on "Introducing Layered Dielectrics in Solid-state Electronic Devices for Neuromorphic Co mputing" URL;VALUE=URI:https://events.vtools.ieee.org/m/262112 X-ALT-DESC:Description: <br /><p>Abstract:</p>\n<p>The introduction of two- dimensional (2D) layered materials in the structure of microelectronic dev ices is a promising strategy to enhance and extend their performance. Seve ral 2D layered metallic and semiconducting materials (e.g. graphene and Mo S<sub>2</sub>) have been successfully implemented in different types of de vices. However\, their interaction with traditional dielectrics (e.g. SiO< sub>2</sub>\, HfO<sub>2</sub>\, Al<sub>2</sub>O<sub>3</sub>) is very poor because 2D materials do not have dangling bonds\, leading to a highly defe ctive interface. To solve this problem\, the most feasible solution is to couple graphene and MoS<sub>2</sub>&nbsp\;with 2D layered dielectrics\, so that they can form a clean van der Waals interface. In this context\, h-B N is a 2D layered dielectric (with a direct band gap of ~5.9 eV) in which boron and nitrogen atoms arrange in a sp<sup>2</sup>&nbsp\;hexagonal latti ce by covalent bonding\, whereas the layers stick to each other by van der Waals attraction. Given its high in-plane mechanical strength (500 N/m)\, large thermal conductivity (600 Wm<sup>-1</sup>K<sup>-1</sup>)\, and high chemical stability (up to 1500 &ordm\;C in air)\, h-BN has attracted much attention as dielectric. In this seminar\, I will present our studies on the use of h-BN as dielectric in microelectronic devices\, and our most re cent progress on the wafer-scale integration of memristive crossbar arrays made of 2D layered materials. By using chemical vapor deposited multilaye r hexagonal boron nitride (h-BN) sheets\, we have fabricated metal/h-BN/me tal memristive crossbar arrays that exhibit\, not only outstanding electri cal characteristics\, but also a high yield and low device-to-device varia bility. These findings may accelerate the use of 2D materials for building wafer-scale and high-density electronic memories and artificial neural ne tworks.</p> END:VEVENT END:VCALENDAR