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DTSTART:20210314T030000
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DTSTAMP:20210322T232323Z
UID:A87FEE52-EE95-4F47-A688-5B2FC02CED6E
DTSTART;TZID=Canada/Eastern:20210318T180000
DTEND;TZID=Canada/Eastern:20210318T193000
DESCRIPTION:Significant research into GaN as materials for semiconductor de
 vices has been carried out during the last 20 years. GaN material has wide
  band gap energy which enables the devices to operate at elevated temperat
 ures (600°C) while retaining low leakage current. The higher breakdown st
 rength for a given blocking voltage of GaN results in small channel length
 s as a result\, the input and output capacitance and\, therefore\, the ass
 ociated switching losses at a given switching frequency\, are reduced. Thi
 s leads to an increase of the switching frequency to 0.5-1 MHz with accept
 able switching losses\, which significantly reduces the size and cost of t
 he passive components in power electronic systems.\n\nWhile Si and SiC pow
 er MOSFETs are normally-OFF enhancement mode vertical devices\, GaN HEMTs 
 are lateral and they can be fabricated to be normally-OFF enhancement mode
  devices or normally-ON depletion mode devices. A normally-ON device is no
 t preferred for high power applications. Designers overcome this problem b
 y creating enhancement mode devices or by integrating a depletion mode HEM
 T with a low voltage Si MOSFET\, and create cascode or direct drive device
 s. In this special session\, the current status and future prospects of Ga
 N Power HEMTs will be presented. Physics and figure of merits (FoMs) of di
 fferent power GaN devices that can be found on the market will be presente
 d. Devices from GaN systems (enhancement mode)\, Transphorm (cascade)\, Vi
 siC and Texas Instrument (direct drive)\, Panasonic (GiT)\, ST (MasterGaN
 ®)\, and Navitas Semiconductor (AllGaN™) will be compared.\n\nSpeaker(s
 ): Dr. Tanya Kirilova Gachovska\, \n\nOttawa\, Ontario\, Canada\, Virtual:
  https://events.vtools.ieee.org/m/263354
LOCATION:Ottawa\, Ontario\, Canada\, Virtual: https://events.vtools.ieee.or
 g/m/263354
ORGANIZER:m_abarzadeh@ieee.org
SEQUENCE:3
SUMMARY:Current Status and Future Prospects of GaN Power Devices
URL;VALUE=URI:https://events.vtools.ieee.org/m/263354
X-ALT-DESC:Description: <br /><p>Significant research into GaN as materials
  for semiconductor devices has been carried out during the last 20 years.&
 nbsp\; GaN material has wide band gap energy which enables the devices to 
 operate at elevated temperatures (600&deg\;C) while retaining low leakage 
 current. The higher breakdown strength for a given blocking voltage of GaN
  results in small channel lengths as a result\, the input and output capac
 itance and\, therefore\, the associated switching losses at a given switch
 ing frequency\, are reduced. This leads to an increase of the switching fr
 equency to 0.5-1 MHz with acceptable switching losses\, which significantl
 y reduces the size and cost of the passive components in power electronic 
 systems.</p>\n<p>While Si and SiC power MOSFETs are normally-OFF enhanceme
 nt mode vertical devices\, GaN HEMTs are lateral and they can be fabricate
 d to be normally-OFF enhancement mode devices or normally-ON depletion mod
 e devices. A normally-ON device is not preferred for high power applicatio
 ns. Designers overcome this problem by creating enhancement mode devices o
 r by integrating a depletion mode HEMT with a low voltage Si MOSFET\, and 
 create cascode or direct drive devices. In this special session\, the curr
 ent status and future prospects of GaN Power HEMTs will be presented. Phys
 ics and figure of merits (FoMs) of different power GaN devices that can be
  found on the market will be presented. Devices from GaN systems (enhancem
 ent mode)\, Transphorm (cascade)\, VisiC and Texas Instrument (direct driv
 e)\, Panasonic (GiT)\, ST (MasterGaN<sup>&reg\;</sup>)\, and Navitas Semic
 onductor (AllGaN&trade\;) will be compared.</p>
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