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DTSTAMP:20220114T095150Z
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DESCRIPTION:Abstract: There is an ever-increasing demand to enhance wireles
 s communication systems to transmit/receive signals with higher quality\, 
 data-rates\, and energy efficiency. This imposes stringent requirements on
  bandwidth\, efficiency\, linearity\, and noise of their circuit component
 s. Currently\, different semiconductor technologies including bulk CMOS\, 
 SOI\, SiGe\, GaAs\, and GaN\, are used to implement circuit components for
  specific application scenarios and target performance. In this presentati
 on\, we present our recent research developments on RF and mm-wave monolit
 hic integrated circuits for wireless communications. The main circuits inc
 lude power amplifiers (PAs)\, broadband amplifiers\, distributed amplifier
 s\, low-noise amplifiers\, and multi-band amplifiers\, which are implement
 ed in GaN and GaAs processes. We present broadband multi-watt RF PAs\, con
 current dual-band RF and mm-wave amplifier\, and a broadband mm-wave ampli
 fier using transformer-feedback bandwidth enhancement. Furthermore\, distr
 ibuted amplifiers with over 40 GHz bandwidth are presented\, which include
  an architecture using transformer coupling between its input and output t
 ransmission lines and a tapered distributed LNA with optimal tapering fact
 ors to improve average noise figure. We develop a PA circuit with an embed
 ded minimum-inductance bandpass filter (BPF) to achieve broadband high eff
 iciency and high harmonic suppression. Finally\, the unbalanced PA archite
 cture is proposed to achieve back-off efficiency enhancement over a wide b
 andwidth.\n\nVirtual: https://events.vtools.ieee.org/m/264164
LOCATION:Virtual: https://events.vtools.ieee.org/m/264164
ORGANIZER:kasinski@agh.edu.pl
SEQUENCE:1
SUMMARY:RF and mm-Wave Monolithic Integrated Circuits for Wireless Communic
 ations - Reza Nikandish
URL;VALUE=URI:https://events.vtools.ieee.org/m/264164
X-ALT-DESC:Description: <br /><p><strong>Abstract:</strong> There is an eve
 r-increasing demand to enhance wireless communication systems to transmit/
 receive signals with higher quality\, data-rates\, and energy efficiency. 
 This imposes stringent requirements on bandwidth\, efficiency\, linearity\
 , and noise of their circuit components. Currently\, different semiconduct
 or technologies including bulk CMOS\, SOI\, SiGe\, GaAs\, and GaN\, are us
 ed to implement circuit components for specific application scenarios and 
 target performance. In this presentation\, we present our recent research 
 developments on RF and mm-wave monolithic integrated circuits for wireless
  communications. The main circuits include power amplifiers (PAs)\, broadb
 and amplifiers\, distributed amplifiers\, low-noise amplifiers\, and multi
 -band amplifiers\, which are implemented in GaN and GaAs processes. We pre
 sent broadband multi-watt RF PAs\, concurrent dual-band RF and mm-wave amp
 lifier\, and a broadband mm-wave amplifier using transformer-feedback band
 width enhancement. Furthermore\, distributed amplifiers with over 40 GHz b
 andwidth are presented\, which include an architecture using transformer c
 oupling between its input and output transmission lines and a tapered dist
 ributed LNA with optimal tapering factors to improve average noise figure.
  We develop a PA circuit with an embedded minimum-inductance bandpass filt
 er (BPF) to achieve broadband high efficiency and high harmonic suppressio
 n. Finally\, the unbalanced PA architecture is proposed to achieve back-of
 f efficiency enhancement over a wide bandwidth.</p>
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