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DTSTART:20210314T030000
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DTSTAMP:20210322T185607Z
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DTSTART;TZID=Canada/Eastern:20210318T180000
DTEND;TZID=Canada/Eastern:20210318T200000
DESCRIPTION:Significant research into GaN as materials for semiconductor de
 vices has been carried out during the last\n20 years. GaN material has wid
 e band gap energy which enables the devices to operate at elevated tempera
 tures (600°C)\nwhile retaining low leakage current. The higher breakdown 
 strength for a given blocking voltage of GaN results in small\nchannel len
 gths as a result\, the input and output capacitance and\, therefore\, the 
 associated switching losses at a given\nswitching frequency\, are reduced.
  This leads to an increase of the switching frequency to 0.5-1 MHz with ac
 ceptable\nswitching losses\, which significantly reduces the size and cost
  of the passive components in power electronic systems.\nWhile Si and SiC 
 power MOSFETs are normally-OFF enhancement mode vertical devices\, GaN HEM
 Ts are lateral and\nthey can be fabricated to be normally-OFF enhancement 
 mode devices or normally-ON depletion mode devices. A\nnormally-ON device 
 is not preferred for high power applications. Designers overcome this prob
 lem by creating\nenhancement mode devices or by integrating a depletion mo
 de HEMT with a low voltage Si MOSFET\, and create cascode\nor direct drive
  devices. In this special session\, the current status and future prospect
 s of GaN Power HEMTs will be\npresented. Physics and figure of merits (FoM
 s) of different power GaN devices that can be found on the market will be\
 npresented. Devices from GaN systems (enhancement mode)\, Transphorm (casc
 ade)\, VisiC and Texas Instrument (direct\ndrive)\, Panasonic (GiT)\, ST (
 MasterGaN®)\, and Navitas Semiconductor (AllGaN™) will be compared.\n\n
 Ottawa\, Ontario\, Canada\, Virtual: https://events.vtools.ieee.org/m/2661
 32
LOCATION:Ottawa\, Ontario\, Canada\, Virtual: https://events.vtools.ieee.or
 g/m/266132
ORGANIZER:11sdw4@queensu.ca
SEQUENCE:1
SUMMARY:Current Status and Future Prospects of GaN Power Devices
URL;VALUE=URI:https://events.vtools.ieee.org/m/266132
X-ALT-DESC:Description: <br /><p>Significant research into GaN as materials
  for semiconductor devices has been carried out during the last<br />20 ye
 ars. GaN material has wide band gap energy which enables the devices to op
 erate at elevated temperatures (600&deg\;C)<br />while retaining low leaka
 ge current. The higher breakdown strength for a given blocking voltage of 
 GaN results in small<br />channel lengths as a result\, the input and outp
 ut capacitance and\, therefore\, the associated switching losses at a give
 n<br />switching frequency\, are reduced. This leads to an increase of the
  switching frequency to 0.5-1 MHz with acceptable<br />switching losses\, 
 which significantly reduces the size and cost of the passive components in
  power electronic systems.<br />While Si and SiC power MOSFETs are normall
 y-OFF enhancement mode vertical devices\, GaN HEMTs are lateral and<br />t
 hey can be fabricated to be normally-OFF enhancement mode devices or norma
 lly-ON depletion mode devices. A<br />normally-ON device is not preferred 
 for high power applications. Designers overcome this problem by creating<b
 r />enhancement mode devices or by integrating a depletion mode HEMT with 
 a low voltage Si MOSFET\, and create cascode<br />or direct drive devices.
  In this special session\, the current status and future prospects of GaN 
 Power HEMTs will be<br />presented. Physics and figure of merits (FoMs) of
  different power GaN devices that can be found on the market will be<br />
 presented. Devices from GaN systems (enhancement mode)\, Transphorm (casca
 de)\, VisiC and Texas Instrument (direct<br />drive)\, Panasonic (GiT)\, S
 T (MasterGaN&reg\;)\, and Navitas Semiconductor (AllGaN&trade\;) will be c
 ompared.</p>
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