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VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
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TZID:Asia/Calcutta
BEGIN:STANDARD
DTSTART:19451014T230000
TZOFFSETFROM:+0630
TZOFFSETTO:+0530
TZNAME:IST
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BEGIN:VEVENT
DTSTAMP:20210325T121841Z
UID:9E5595FD-C1F3-4CBC-BF88-69B4B4E72A13
DTSTART;TZID=Asia/Calcutta:20210325T150000
DTEND;TZID=Asia/Calcutta:20210325T160000
DESCRIPTION:In recent years\, graphene and its derivatives have been invest
 igated widely to develop field-effect devices because of its unique and ri
 ch electronics properties. A few works have already been reported where th
 e nanomaterials/graphene hybrid channel-based field-effect transistors (FE
 Ts) have been used to develop efficient photodetectors and chemical sensor
 s. In most of the cases\, metal nanoparticles\, nanoscale metal oxides\, a
 nd metal chalcogenides have been preferred for the hybrid graphene FET fab
 rication. In the current talk\, metal and metal oxide quantum nanoparticle
  decorated graphene FET will be discussed for developing the back gated fi
 eld-effect transistors with a very high ON/OFF ratio. The applicability of
  a similar device will also be discussed for various chemical sensing appl
 ications with amplified sensitivity.\n\nSpeaker(s): Arnab Hazra\, \n\nVirt
 ual: https://events.vtools.ieee.org/m/266912
LOCATION:Virtual: https://events.vtools.ieee.org/m/266912
ORGANIZER:ieeestb@iiitdmj.ac.in
SEQUENCE:1
SUMMARY:Webinar on "Hybrid Graphene Field Effect Transistors"
URL;VALUE=URI:https://events.vtools.ieee.org/m/266912
X-ALT-DESC:Description: <br /><p>In recent years\, graphene and its derivat
 ives have been investigated widely to develop field-effect devices because
  of its unique and rich electronics properties. A few works have already b
 een reported where the nanomaterials/graphene hybrid channel-based field-e
 ffect transistors (FETs) have been used to develop efficient photodetector
 s and chemical sensors. In most of the cases\, metal nanoparticles\, nanos
 cale metal oxides\, and metal chalcogenides have been preferred for the hy
 brid graphene FET fabrication. In the current talk\, metal and metal oxide
  quantum nanoparticle decorated graphene FET will be discussed for develop
 ing the back gated field-effect transistors with a very high ON/OFF ratio.
  The applicability of a similar device will also be discussed for various 
 chemical sensing applications with amplified sensitivity. &nbsp\;&nbsp\;</
 p>
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