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TZID:Australia/Victoria
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DTSTART:20211003T030000
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DTSTAMP:20210621T163404Z
UID:626863F2-4ECE-49AB-AA27-92B7D03B4EB7
DTSTART;TZID=Australia/Victoria:20210621T183000
DTEND;TZID=Australia/Victoria:20210621T193000
DESCRIPTION:Encryption\, security\, functionality and identification settin
 g become indispensable in the IoT and the upcoming 5G era for high-end con
 sumer electronics. As a result\, various SoC applications bring up an incr
 easing demands of logic memory IP in advanced technology nodes. Comparing 
 to the stand-alone memory chips (NAND\, NOR flash)\, the development of sp
 ecific function of memory\, such as One-Time-Programming or PUF(Physical U
 nclonable Function)\, becomes more popular in terms of its simplicity base
 d on the pure logic process.\n\nIn this talk\, a non-volatile OTP memory c
 ell\, using a specific dielectric breakdown\, named dFuse\, discovered as 
 a third breakdown different from conventional soft-breakdown and hard-brea
 kdown\, has been able to achieve high density and excellent data storage\,
  for reliable and high security applications. Based on the device physics\
 , the mechanism of the dielectric breakdown will first be introduced and t
 he origin of the breakdown will be described. For hardware security purpos
 es\, first application as an OTP memory will be demonstrated. Further impl
 ementation as a PUF for hardware security will then be demonstrated.\n\nSp
 eaker(s): Professor Steve Chung\, \n\nMelbourne\, Victoria\, Australia\, 3
 000
LOCATION:Melbourne\, Victoria\, Australia\, 3000
ORGANIZER:yvisagathilagar@gmail.com
SEQUENCE:5
SUMMARY:The Discovery of Third Breakdown: Applications to Memories and Hard
 ware Security 
URL;VALUE=URI:https://events.vtools.ieee.org/m/269390
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;Encryption\, security\, functionality and 
 identification setting become indispensable in the IoT and the upcoming 5G
  era for high-end consumer electronics. As a result\, various SoC applicat
 ions bring up an increasing demands of logic memory IP in advanced technol
 ogy nodes. Comparing to the stand-alone memory chips (NAND\, NOR flash)\, 
 the development of specific function of memory\, such as One-Time-Programm
 ing or PUF(Physical Unclonable Function)\, becomes more popular in terms o
 f its simplicity based on the &lt;em&gt;pure logic process&lt;/em&gt;.&lt;/p&gt;\n&lt;p&gt;&amp;nbsp\;
 &lt;/p&gt;\n&lt;p&gt;In this talk\, a non-volatile OTP memory cell\, using a specific 
 dielectric breakdown\, named dFuse\, discovered as a &lt;strong&gt;&lt;em&gt;third bre
 akdown&lt;/em&gt;&lt;/strong&gt; different from conventional soft-breakdown and hard-b
 reakdown\, has been able to achieve high density and excellent data storag
 e\, for reliable and high security applications. Based on the device physi
 cs\, the mechanism of the dielectric breakdown will first be introduced an
 d the origin of the breakdown will be described. For hardware security pur
 poses\, first application as an OTP memory will be demonstrated. Further i
 mplementation as a PUF for hardware security will then be demonstrated.&lt;/p
 &gt;
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