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DTSTART:20210314T030000
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DTSTAMP:20210526T203950Z
UID:51A68791-2477-4A50-B3A6-0FBBEAB6A7AF
DTSTART;TZID=America/Denver:20210526T120000
DTEND;TZID=America/Denver:20210526T130000
DESCRIPTION:Abstract\n\nPhoton-material interaction is generally very weak 
 in most semiconductors when incident photon wavelengths are close to their
  optical band gap. This leads to very weak absorption coefficients requiri
 ng considerably thick semiconductor films for efficient light absorption. 
 However\, a photodetector designed with thick absorption region cannot ope
 rate at high-speed due to long carrier drift-time. In this presentation\, 
 we will demonstrate a technique to bend normally incident beams of light b
 y almost ninety degrees into laterally propagating modes of light along th
 e plane of semiconductor films by using a periodic array of micro and nano
 scale holes. Such structures bend light beams\, slow them down and contrib
 ute to unprecedented improvement in the light absorption efficiency in dev
 ices\, even when they are designed with very thin absorption egions. This 
 opens new application opportunities such as ultra-fast CMOS compatible pho
 todiodes for datacenter communication links\, LIDAR\, advanced bio imaging
  and sensors and highly efficient solar cells.\n\nSpeaker(s): Professor Sa
 if Islam\, \n\nBoise\, California\, United States\, Virtual: https://event
 s.vtools.ieee.org/m/272705
LOCATION:Boise\, California\, United States\, Virtual: https://events.vtool
 s.ieee.org/m/272705
ORGANIZER:pi-boson@ieee.org
SEQUENCE:2
SUMMARY:Trapping and slowing down photons using black holes in silicon for 
 datacom\, sensing\, and energy conversion
URL;VALUE=URI:https://events.vtools.ieee.org/m/272705
X-ALT-DESC:Description: <br /><p><strong>Abstract</strong></p>\n<p>Photon-m
 aterial interaction is generally very weak in most semiconductors when inc
 ident photon wavelengths are close to their optical band gap. This leads t
 o very weak absorption coefficients requiring considerably thick semicondu
 ctor films for efficient light absorption. However\, a photodetector desig
 ned with thick absorption region cannot operate at high-speed due to long 
 carrier drift-time. In this presentation\, we will demonstrate a technique
  to bend normally incident beams of light by almost ninety degrees into la
 terally propagating modes of light along the plane of semiconductor films 
 by using a periodic array of micro and nanoscale holes. Such structures be
 nd light beams\, slow them down and contribute to unprecedented improvemen
 t in the light absorption efficiency in devices\, even when they are desig
 ned with very thin absorption&nbsp\; egions. This opens new application op
 portunities such as ultra-fast CMOS compatible photodiodes for datacenter 
 communication links\, LIDAR\, advanced bio imaging and sensors and highly 
 efficient solar cells.</p>\n<p>&nbsp\;</p>
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