BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Australia/Sydney BEGIN:DAYLIGHT DTSTART:20211003T030000 TZOFFSETFROM:+1000 TZOFFSETTO:+1100 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=10 TZNAME:AEDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20210404T020000 TZOFFSETFROM:+1100 TZOFFSETTO:+1000 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=4 TZNAME:AEST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20210603T023551Z UID:9B4666CB-CA39-4EC0-B81A-2CEACA0A67FB DTSTART;TZID=Australia/Sydney:20210606T133000 DTEND;TZID=Australia/Sydney:20210606T143000 DESCRIPTION:Terahertz waves hold potential for attractive applications incl uding high-volume wireless communications and non-destructive object-penet rating imaging. Despite this\, the terahertz range is presently an under-u tilized portion of the electromagnetic spectrum due to significant technic al challenges. Firstly\, it is difficult to generate high power from compa ct terahertz sources\, and this issue is compounded by strong atmospheric attenuation. For this reason\, terahertz devices and systems must be highl y efficient. Secondly\, a suitable general-purpose waveguiding platform fo r terahertz waves is necessary\, but has historically been lacking. Hollow metallic waveguides are currently dominant in the terahertz range\, but t hey are far from ideal\; fabrication is challenging and expensive at micro -scale\, and metals exhibit non-negligible Ohmic loss at high frequencies. In this presentation\, we will discuss a promising viable alternative tha t is inspired by infrared photonic technologies: all-silicon integrated mi crophotonics. In brief\, various arrangements of through-holes are etched into an intrinsic silicon wafer in order to define features such as photon ic crystal\, effective media\, waveguides\, integrated optics\, and passiv e devices. This platform is innately efficient\, as high-resistivity intri nsic silicon exhibits essentially negligible absorption in the terahertz r ange. It is also versatile\, as a broad variety of passive components may be monolithically integrated together\, and fabricated simultaneously in a single-mask etch process. No potentially-lossy substrate is required\, as micro-scale silicon is sufficiently robust to be self-supporting. Finally \, although only passive components may be realized directly in this all-i ntrinsic-silicon platform\, hybrid integration provides a way to incorpora te terahertz-range active devices\, e.g. with III-V semiconductor-based in tegrated circuits. This presentation is intended to provide an overview of salient developments in integrated microphotonics for terahertz waves\, a nd to give some perspectives on the future.\n\nCo-sponsored by: IEEE AP/MT T SA Chapter\n\nSpeaker(s): Dr Daniel Headland\, \n\nSydney\, New South Wa les\, Australia\, 2000\, Virtual: https://events.vtools.ieee.org/m/273843 LOCATION:Sydney\, New South Wales\, Australia\, 2000\, Virtual: https://eve nts.vtools.ieee.org/m/273843 ORGANIZER:syed.abbas@mq.edu.au SEQUENCE:0 SUMMARY:Integrated Microphotonics for Terahertz Systems URL;VALUE=URI:https://events.vtools.ieee.org/m/273843 X-ALT-DESC:Description: <br /><p>Terahertz waves hold potential for attract ive applications including high-volume wireless communications and non-des tructive object-penetrating imaging. Despite this\, the terahertz range is presently an under-utilized portion of the electromagnetic spectrum due t o significant technical challenges. Firstly\, it is difficult to generate high power from compact terahertz sources\, and this issue is compounded b y strong atmospheric attenuation. For this reason\, terahertz devices and systems must be highly efficient. Secondly\, a suitable general-purpose wa veguiding platform for terahertz waves is necessary\, but has historically been lacking. Hollow metallic waveguides are currently dominant in the te rahertz range\, but they are far from ideal\; fabrication is challenging a nd expensive at micro-scale\, and metals exhibit non-negligible Ohmic loss at high frequencies. In this presentation\, we will discuss a promising v iable alternative that is inspired by infrared photonic technologies: all- silicon integrated microphotonics. In brief\, various arrangements of thro ugh-holes are etched into an intrinsic silicon wafer in order to define fe atures such as photonic crystal\, effective media\, waveguides\, integrate d optics\, and passive devices. This platform is innately efficient\, as h igh-resistivity intrinsic silicon exhibits essentially negligible absorpti on in the terahertz range. It is also versatile\, as a broad variety of pa ssive components may be monolithically integrated together\, and fabricate d simultaneously in a single-mask etch process. No potentially-lossy subst rate is required\, as micro-scale silicon is sufficiently robust to be sel f-supporting. Finally\, although only passive components may be realized d irectly in this all-intrinsic-silicon platform\, hybrid integration provid es a way to incorporate terahertz-range active devices\, e.g. with III-V s emiconductor-based integrated circuits. This presentation is intended to p rovide an overview of salient developments in integrated microphotonics fo r terahertz waves\, and to give some perspectives on the future.</p> END:VEVENT END:VCALENDAR