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DTSTART:20210314T030000
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DTSTAMP:20210713T233226Z
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DTSTART;TZID=America/Chicago:20210617T190000
DTEND;TZID=America/Chicago:20210617T203000
DESCRIPTION:Join the CRIEEE MTT for a re-broadcast of a talk given by Prof.
  James Buckwalter. This webinar reviews the requirements for future digita
 l arrays in terms of power amplifier specifications for output power and e
 fficiency and the device technologies that will realize future energy-effi
 cient communication and sensing electronics for the upper millimeter-wave 
 bands (100-300 GHz). Device technologies are reviewed to compare the needs
  for compound semiconductors and silicon processes. Power amplifier circui
 t design above 100 GHz is reviewed based on loadline and matching element 
 losses. Recently published class-A and class-B PAs based on a InP HBT proc
 ess are presented that have demonstrated record efficiency and power aroun
 d 140 GHz as well as circuit techniques that can be applied in a variety o
 f integrated circuits.\n\nSpeaker(s): Prof. James Buckwalter\, \n\nVirtual
 : https://events.vtools.ieee.org/m/274766
LOCATION:Virtual: https://events.vtools.ieee.org/m/274766
ORGANIZER:erlandsonrl@aol.com
SEQUENCE:1
SUMMARY:IEEE-MTT Webinar Re-broadcast: Power Amplifiers for High Efficiency
  Above 100 GHz
URL;VALUE=URI:https://events.vtools.ieee.org/m/274766
X-ALT-DESC:Description: <br /><p>Join the CRIEEE MTT for a re-broadcast of 
 a talk given by Prof. James Buckwalter. &nbsp\;T<span style="font-weight: 
 400\;">his webinar reviews the requirements for future digital arrays in t
 erms of power amplifier specifications for output power and efficiency and
  the device technologies that will realize future energy-efficient communi
 cation and sensing electronics for the upper millimeter-wave bands (100-30
 0 GHz). Device technologies are reviewed to compare the needs for compound
  semiconductors and silicon processes. Power amplifier circuit design abov
 e 100 GHz is reviewed based on loadline and matching element losses. Recen
 tly published class-A and class-B PAs based on a InP HBT process are prese
 nted that have demonstrated record efficiency and power around 140 GHz as 
 well as circuit techniques that can be applied in a variety of integrated 
 circuits.</span></p>
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