BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:Asia/Calcutta
BEGIN:STANDARD
DTSTART:19451014T230000
TZOFFSETFROM:+0630
TZOFFSETTO:+0530
TZNAME:IST
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BEGIN:VEVENT
DTSTAMP:20210722T171012Z
UID:B286A63B-A4EB-4B35-A790-7AD371D485CA
DTSTART;TZID=Asia/Calcutta:20210722T173000
DTEND;TZID=Asia/Calcutta:20210722T193000
DESCRIPTION:IEEE EDS Distinguished Lecture by Prof. Prof. Joachim N. Burgha
 rtz\, IMS CHIPS\, Stuttgart\, Germany\n\nTalk: GaN-on-Si Technology for Po
 wer\, RF & Specials\n\nCo-sponsored by: Dr. T. R. Lenka\n\nSpeaker(s): Pro
 f. Joachim N. Burghartz \, \n\nAgenda: \nIEEE EDS Distinguished Lecture by
  Prof. Prof. Joachim N. Burghartz\, IMS CHIPS\, Stuttgart\, Germany\n\nWel
 come Address by Host Institute\n\nTalk: GaN-on-Si Technology for Power\, R
 F & Specials\n\nRoom: EC-23\, Bldg: ECE/CSE Building\, Dept. of ECE\, NIT 
 Silchar\, National Institute of Technology Silchar\, Silchar\, Assam\, Ind
 ia\, 788010\, Virtual: https://events.vtools.ieee.org/m/276498
LOCATION:Room: EC-23\, Bldg: ECE/CSE Building\, Dept. of ECE\, NIT Silchar\
 , National Institute of Technology Silchar\, Silchar\, Assam\, India\, 788
 010\, Virtual: https://events.vtools.ieee.org/m/276498
ORGANIZER:trlenka@ieee.org
SEQUENCE:2
SUMMARY:IEEE EDS Distinguished Lecture by Prof. Joachim N. Burghartz\, IMS 
 CHIPS\, Stuttgart\, Germany
URL;VALUE=URI:https://events.vtools.ieee.org/m/276498
X-ALT-DESC:Description: <br /><p><strong>IEEE EDS Distinguished Lecture by 
 Prof. Prof. Joachim N. Burghartz\, IMS CHIPS\, Stuttgart\, Germany</strong
 ></p>\n<p><strong>Talk: GaN-on-Si Technology for Power\, RF &amp\; Special
 s</strong></p><br /><br />Agenda: <br /><p><strong>IEEE EDS Distinguished 
 Lecture by Prof. Prof. Joachim N. Burghartz\, IMS CHIPS\, Stuttgart\, Germ
 any</strong></p>\n<p><strong>Welcome Address by Host Institute</strong></p
 >\n<p><strong>Talk: GaN-on-Si Technology for Power\, RF &amp\; Specials</s
 trong></p>
END:VEVENT
END:VCALENDAR