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PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
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TZID:America/Montreal
BEGIN:DAYLIGHT
DTSTART:20210314T030000
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3
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DTSTART:20211107T010000
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TZOFFSETTO:-0500
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BEGIN:VEVENT
DTSTAMP:20211228T153032Z
UID:828635CC-FA64-48CE-BA65-F0839FA90F08
DTSTART;TZID=America/Montreal:20211014T100000
DTEND;TZID=America/Montreal:20211014T113000
DESCRIPTION:Recent advance in DC electric generators has demonstrated that 
 the new generators are of several advantages over traditional electric gen
 erators that are well known to us. In these new generators\, DC electric p
 ower is converted from mechanical power through either semiconductor junct
 ion modification by mechanic impact or dynamic junction by sliding one sem
 iconductor/metal electrode on the other. The short circuit current is dete
 rmined by the generation rate of electrons and holes at the contacted surf
 aces\, while the open-circuit voltage is determined by the chemical potent
 ial difference of the two electrodes. In the talk\, I shall review recent 
 advances in the generators and discuss the mechanisms of electron/hole gen
 eration and transport in the devices. Advances in fundamental semiconducto
 r physics and perspectives and technical challenges will be highlighted.\n
 \nVirtual: https://events.vtools.ieee.org/m/283533
LOCATION:Virtual: https://events.vtools.ieee.org/m/283533
ORGANIZER:xin.liu@inrs.ca
SEQUENCE:14
SUMMARY:INRS Nanomaterial scientist Forum: Mechanical to Electric Power Con
 version from Dynamic p-n Junctions
URL;VALUE=URI:https://events.vtools.ieee.org/m/283533
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span style=&quot;color: #000000\; font-size: 1
 4pt\;&quot;&gt;&lt;strong&gt;Recent advance in DC electric generators has demonstrated t
 hat the new generators are of several advantages over traditional electric
  generators that are well known to us. In these new generators\, DC electr
 ic power is converted from mechanical power through either semiconductor j
 unction modification by mechanic impact or dynamic junction by sliding one
  semiconductor/metal electrode on the other. The short circuit current is 
 determined by the generation rate of electrons and holes at the contacted 
 surfaces\, while the open-circuit voltage is determined by the chemical po
 tential difference of the two electrodes. In the talk\, I shall review rec
 ent advances in the generators and discuss the mechanisms of electron/hole
  generation and transport in the devices. Advances in fundamental semicond
 uctor physics and perspectives and technical challenges will be highlighte
 d.&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;
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