BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VEVENT
DTSTAMP:20211227T235633Z
UID:446ABB8D-4FF2-48E4-A947-FD076FC84381
DTSTART;TZID=Etc/GMT-3:20211227T173000
DTEND;TZID=Etc/GMT-3:20211227T181000
DESCRIPTION:Invitation\nThe IEEE Joint chapter Nº 3 (EDS/SCC) of Argentina
  section Invite´s you to the lecture “Dielectric breakdown in thin diel
 ectrics. From silicon dioxide to layered dielectrics” dictated by the IE
 EE distinguished lecturer Dr. Felix Palumbo\n\nAbstract\nThin dielectrics 
 are the fundamental stone over which the semiconductor industry experience
 d its huge development. As the key element for manufacturing Metal Oxide S
 emiconductor Field Effect Transistors\, guaranteeing the reliability of ga
 te oxides has become more challenging with the pushing demands of the mark
 ets for improved performance in electronic devices. In this framework\, un
 derstanding not only the statistics but the physical phenomena behind diel
 ectric breakdown is crucial to ensure the reliability of modern and future
  electronic devices.\n\nIn this work\, the fundamentals of thin dielectric
  breakdown and the state of the art of breakdown studies on novel material
 s is summarized\, focusing on the physical phenomena that characterize thi
 n film dielectric breakdown and the perspectives on novel 2D materials\, t
 hat demonstrate a remarkable potential to be applied as gate insulators in
  future nano-electronic devices.\n\nSpeaker(s): Dr. Felix Palumbo\, \n\nVi
 rtual: https://events.vtools.ieee.org/m/295572
LOCATION:Virtual: https://events.vtools.ieee.org/m/295572
ORGANIZER:eds.sscs.ar@ieee.org
SEQUENCE:9
SUMMARY:EDS/SSC - Dielectric breakdown in thin dielectrics. From silicon di
 oxide to layered dielectrics
URL;VALUE=URI:https://events.vtools.ieee.org/m/295572
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span style=&quot;font-weight: 400\;&quot;&gt;&lt;span sty
 le=&quot;font-family: &#39;arial black&#39;\, sans-serif\;&quot;&gt;Invitation&lt;/span&gt;&lt;/span&gt;&lt;br
  /&gt;The IEEE Joint chapter N&amp;ordm\; 3 (EDS/SCC) of Argentina section Invite
 &amp;acute\;s you to the lecture &amp;ldquo\;Dielectric breakdown in thin dielectr
 ics. From silicon dioxide to layered dielectrics&amp;rdquo\; dictated by the I
 EEE distinguished lecturer &lt;strong&gt;Dr. Felix Palumbo&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;&lt;spa
 n style=&quot;font-family: &#39;arial black&#39;\, sans-serif\;&quot;&gt;Abstract&lt;/span&gt;&lt;br /&gt;&lt;
 span style=&quot;font-weight: 400\;&quot;&gt;Thin dielectrics are the fundamental stone
  over which the semiconductor industry experienced its huge development. A
 s the key element for manufacturing Metal Oxide Semiconductor Field Effect
  Transistors\, guaranteeing the reliability of gate oxides has become more
  challenging with the pushing demands of the markets for improved performa
 nce in electronic devices. In this framework\, understanding not only the 
 statistics but the physical phenomena behind dielectric breakdown is cruci
 al to ensure the reliability of modern and future electronic devices. &lt;/sp
 an&gt;&lt;/p&gt;\n&lt;p&gt;&lt;span style=&quot;font-weight: 400\;&quot;&gt;In this work\, the fundamenta
 ls of thin dielectric breakdown and the state of the art of breakdown stud
 ies on novel materials is summarized\, focusing on the physical phenomena 
 that characterize thin film dielectric breakdown and the perspectives on n
 ovel 2D materials\, that demonstrate a remarkable potential to be applied 
 as gate insulators in future nano-electronic devices.&lt;/span&gt;&lt;/p&gt;
END:VEVENT
END:VCALENDAR