BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Australia/Adelaide BEGIN:DAYLIGHT DTSTART:20221002T030000 TZOFFSETFROM:+0930 TZOFFSETTO:+1030 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=10 TZNAME:ACDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20220403T020000 TZOFFSETFROM:+1030 TZOFFSETTO:+0930 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=4 TZNAME:ACST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20220506T015945Z UID:C4EC39D5-92AB-49E6-81C8-9C0BC8C60035 DTSTART;TZID=Australia/Adelaide:20220428T143000 DTEND;TZID=Australia/Adelaide:20220428T153000 DESCRIPTION:A wide untapped region exists between radio waves and light in the electromagnetic spectrum: terahertz (THz) waves. THz frequencies combi ne the penetration of radio waves and the large bandwidth of light\, which makes them excellent candidates for next-generation information communica tion technology\, 6G and beyond\, such as ultra-broadband wireless communi cation\, spectroscopic sensing\, nondestructive imaging\, and high-resolut ion ranging. However\, THz frequencies are at the upper limit of the capab ilities of conventional electronics\, and the development of THz devices a nd systems is a challenging field of interdisciplinary research. In partic ular\, it is difficult to generate a significant amount of power from THz sources. THz devices must\, therefore\, be as efficient as possible to con serve limited power. Resonant tunneling diodes\, which can make the fundam ental THz oscillation at room temperature\, are a major candidate for both THz transmitters and receivers because of their simple and low-power cons umption electronic devices. In addition\, a low-loss platform for integrat ing THz devices is essential for various practical systems. However\, the propagation loss of transmission lines based on conventional electronics i s high in the THz region\, mainly owing to the high ohmic loss in metals. Thus\, an alternative\, metal-free integrated platform based on THz silico n photonic structures is necessary to manipulate THz waves.\n\nCo-sponsore d by: Morteza Shahpari\n\nSpeaker(s): Prof. Masayuki Fujita\, \n\nVirtual: https://events.vtools.ieee.org/m/311156 LOCATION:Virtual: https://events.vtools.ieee.org/m/311156 ORGANIZER:morteza.shahpari@ieee.org SEQUENCE:6 SUMMARY:Advanced terahertz devices and systems based on silicon photonic st ructures and resonant tunneling diodes toward 6G and beyond URL;VALUE=URI:https://events.vtools.ieee.org/m/311156 X-ALT-DESC:Description: <br /><p>A wide untapped region exists between radi o waves and light in the electromagnetic spectrum: terahertz (THz) waves. THz frequencies combine the penetration of radio waves and the large bandw idth of light\, which makes them excellent candidates for next-generation information communication technology\, 6G and beyond\, such as ultra-broad band wireless communication\, spectroscopic sensing\, nondestructive imagi ng\, and high-resolution ranging. However\, THz frequencies are at the upp er limit of the capabilities of conventional electronics\, and the develop ment of THz devices and systems is a challenging field of interdisciplinar y research. In particular\, it is difficult to generate a significant amou nt of power from THz sources. THz devices must\, therefore\, be as efficie nt as possible to conserve limited power. Resonant tunneling diodes\, whic h can make the fundamental THz oscillation at room temperature\, are a maj or candidate for both THz transmitters and receivers because of their simp le and low-power consumption electronic devices. In addition\, a low-loss platform for integrating THz devices is essential for various practical sy stems. However\, the propagation loss of transmission lines based on conve ntional electronics is high in the THz region\, mainly owing to the high o hmic loss in metals. Thus\, an alternative\, metal-free integrated platfor m based on THz silicon photonic structures is necessary to manipulate THz waves.</p> END:VEVENT END:VCALENDAR