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DTSTAMP:20220601T222209Z
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DTSTART;TZID=Canada/Pacific:20220601T110000
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DESCRIPTION:Abstract: Electron devices and materials has reached a crossroa
 d with Moore’s law. While scaling (More Moore) will continue nanoelectro
 nics device research will face many challenges and issues. This year being
  the 75th Year of Transistor the talk will discuss how the transistor has 
 been transformed from a planar device to a three-dimensional device\, FinF
 ET. We will also talk about its reliability issues like Self-Heating. Inte
 gration of new channel materials like germanium\, gate stack formation and
  scaling of memory devices continue to be part of active research. The res
 earch focus of beyond scaling (More than Moore) involves new devices and m
 aterials. Additionally\, current trends in Internet of Things (IoT) requir
 e the convergence of Nanoelectronics\, Nanotechnology\, Communication Tech
 nology\, and Information Technology. Integrated sensor systems monitoring 
 environment\, health care\, water quality\, vehicle traffic\, smart cities
  are becoming the norm. Furthermore\, nanoelectronics devices with extreme
 ly low power consumption like ReRAM allows a set of next generation device
 s for artificial intelligence hardware and neuromorphic applications. It i
 s\, therefore\, important to get exposed to the current trends in circuit 
 design architectures\, device structures and fabrication\, device and circ
 uit relationship and design\, reliability of new devices and processes.\n\
 nSpeaker(s): Prof. Durga Misra\, \n\nVirtual: https://events.vtools.ieee.o
 rg/m/311814
LOCATION:Virtual: https://events.vtools.ieee.org/m/311814
ORGANIZER:mmadachi@sfu.ca
SEQUENCE:2
SUMMARY:"ELECTRON DEVICES - World of Nanoelectronics: 75th Year of Transist
 or"\, IEEE EDS Distinguished Lecturer talk
URL;VALUE=URI:https://events.vtools.ieee.org/m/311814
X-ALT-DESC:Description: <br /><p>Abstract: Electron devices and materials h
 as reached a crossroad with Moore&rsquo\;s law. While scaling (More Moore)
  will continue nanoelectronics device research will face many challenges a
 nd issues. This year being the 75th Year of Transistor the talk will discu
 ss how the transistor has been transformed from a planar device to a three
 -dimensional device\, FinFET. We will also talk about its reliability issu
 es like Self-Heating. Integration of new channel materials like germanium\
 , gate stack formation and scaling of memory devices continue to be part o
 f active research. The research focus of beyond scaling (More than Moore) 
 involves new devices and materials. Additionally\, current trends in Inter
 net of Things (IoT) require the convergence of Nanoelectronics\, Nanotechn
 ology\, Communication Technology\, and Information Technology. Integrated 
 sensor systems monitoring environment\, health care\, water quality\, vehi
 cle traffic\, smart cities are becoming the norm. Furthermore\, nanoelectr
 onics devices with extremely low power consumption like ReRAM allows a set
  of next generation devices for artificial intelligence hardware and neuro
 morphic applications. It is\, therefore\, important to get exposed to the 
 current trends in circuit design architectures\, device structures and fab
 rication\, device and circuit relationship and design\, reliability of new
  devices and processes.</p>
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