BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20220313T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20220429T145421Z UID:B3A6D7CE-7348-4C2A-A25B-9F133D4C4BD3 DTSTART;TZID=America/New_York:20220426T120000 DTEND;TZID=America/New_York:20220426T130000 DESCRIPTION:Conventional CMOS technology has reached to the brink of its sc aling limits and poses significant challenges for the development of next generation high-speed ultra-low power cost-effective memory and processing devices. The failure of Moore's law on the technology roadmap has enforce d the research community to explore alternative technology solutions to mi tigate the problems.\n\nIn the post-CMOS era\, spintronics shall emerge as a potentially viable interdisciplinary field with credible technological perspectives. Spintronic exploits an electron’s spin orientation and its associated magnetic moment as a state variable instead of a conventionall y used charge in CMOS technology.\n\nIn general\, the spintronic devices a re layered structure of ferromagnetic materials and provide the nonvolatil e storage options and manipulations of logic states. Spin transfer torque (STT) and spin orbit torque (SOT) devices using magnetic tunnel junctions (MTJs) have become strong contenders for the nonvolatile embedded memory a rchitectures with the capability of implementing the concepts of "logic-in -memory" and "material-device-circuit co-design." The spin torque devices offer the features of "universal memory" i.e.\, high speed\, nonvolatility \, high density\, and low power\, high endurance\, CMOS process compatibil ity. Apart from the basic spin torque devices\, the field of spintronics e ncloses all spin logic (ASL) devices\, domain wall (DW) based devices\, sp in diodes\, and spin FETs. The material and device level roadmaps for the field of spintronics suggest that the research work is at the infant stage and still require different elemental spin device developments with the u nderstanding of associated underlying physics. In addition\, the accurate models for the spintronic devices imitating the effect of stochastic behav iour and PVT variations need to be explored. Spintronics based architectur es are being considered for computing applications such as bio-inspired co mputing and quantum computing. These spintronics based novel computing app roaches find applications in image processing and provides efficient solut ion to the complex computing problems.\n\nSpeaker(s): Dr Brajesh Kaushik\, \n\nRoom: Presentation Center\, Bldg: 965\, 1000 River Road\, Essex Junct ion\, Vermont\, United States\, 05452\, Virtual: https://events.vtools.iee e.org/m/312221 LOCATION:Room: Presentation Center\, Bldg: 965\, 1000 River Road\, Essex Ju nction\, Vermont\, United States\, 05452\, Virtual: https://events.vtools. ieee.org/m/312221 ORGANIZER:hurstj@us.ibm.com SEQUENCE:9 SUMMARY:Spintronics - Perspectives and Challenges URL;VALUE=URI:https://events.vtools.ieee.org/m/312221 X-ALT-DESC:Description: <br /><p>Conventional CMOS technology has reached t o the brink of its scaling limits and poses significant challenges for the development of next generation high-speed ultra-low power cost-effective memory and processing devices. The failure of Moore's law on the technolog y roadmap has enforced the research community to explore alternative techn ology solutions to mitigate the problems.</p>\n<p>In the post-CMOS era\, s pintronics shall emerge as a potentially viable interdisciplinary field wi th credible technological perspectives. Spintronic exploits an electron&rs quo\;s spin orientation and its associated magnetic moment as a state vari able instead of a conventionally used charge in CMOS technology.</p>\n<p>I n general\, the spintronic devices are layered structure of ferromagnetic materials and provide the nonvolatile storage options and manipulations of logic states. Spin transfer torque (STT) and spin orbit torque (SOT) devi ces using magnetic tunnel junctions (MTJs) have become strong contenders f or the nonvolatile embedded memory architectures with the capability of im plementing the concepts of "logic-in-memory" and "material-device-circuit co-design." The spin torque devices offer the features of "universal memor y" i.e.\, high speed\, nonvolatility\, high density\, and low power\, high endurance\, CMOS process compatibility. Apart from the basic spin torque devices\, the field of spintronics encloses all spin logic (ASL) devices\, domain wall (DW) based devices\, spin diodes\, and spin FETs. The materia l and device level roadmaps for the field of spintronics suggest that the research work is at the infant stage and still require different elemental spin device developments with the understanding of associated underlying physics. In addition\, the accurate models for the spintronic devices imit ating the effect of stochastic behaviour and PVT variations need to be exp lored. Spintronics based architectures are being considered for computing applications such as bio-inspired computing and quantum computing. These s pintronics based novel computing approaches find applications in image pro cessing and provides efficient solution to the complex computing problems. </p> END:VEVENT END:VCALENDAR