BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Canada/Eastern BEGIN:DAYLIGHT DTSTART:20220313T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20220609T141759Z UID:CFF99678-EE25-4AC8-A0C0-470981941DFD DTSTART;TZID=Canada/Eastern:20220609T090000 DTEND;TZID=Canada/Eastern:20220609T100000 DESCRIPTION:Abstract : III-V compound semiconductor nanowires (NWs) have dr awn much attention as nanoscale building blocks for integrated photonics/o ptoelectronics due to their nanoscale size\, excellent optical properties and effectiveness in strain relaxation enabling the monolithic growth on l attice-mismatched substrates. In particular\, NWs grown by selective area epitaxy technique have many advantages such as controllability of their si ze and position\, high uniformity in diameter and length\, as well as comp lementary metal-oxide-semiconductor (CMOS) process compatibility\, facilit ating their integration with other electronic devices. With suitable wavel ength ranging from 1.3 to 1.6 μm and lattice match of constituent materia ls\, InGaAs/InP quantum well (QW) has been being widely used for optical c ommunication devices. However there has been limited understanding on the growth of InGaAs/InP QW in nanowire architecture and their application for optoelectronic devices such as lasers/LEDs and photodetectors. In this wo rk\, we present the study of the selective area epitaxy growth of InGaAs/I nP multi-QW NW array by metalorganic chemical vapour deposition (MOCVD) te chnique\, and the demonstration of nanowire LEDs/lasers and photodetectors with an investigation of their strong geometry related device properties by both numerical simulation and optoelectronic characterizations.\n\nSpea ker(s): Prof. Lan Fu\, \n\nRoom: MC603\, McConnell Engineering building\, 3480 University Street\, H3A 0E9\, Montreal\, Quebec\, Canada\, Virtual: h ttps://events.vtools.ieee.org/m/312248 LOCATION:Room: MC603\, McConnell Engineering building\, 3480 University Str eet\, H3A 0E9\, Montreal\, Quebec\, Canada\, Virtual: https://events.vtool s.ieee.org/m/312248 ORGANIZER:odile@ieee.org SEQUENCE:10 SUMMARY:IEEE Distinguished Lecture - "Quantum wells in Nanowires for Optoel ectronic Applications: Materials and Devices" by Prof. Lan Fu URL;VALUE=URI:https://events.vtools.ieee.org/m/312248 X-ALT-DESC:Description: <br /><p><strong>Abstract :</strong> III-V compound semiconductor nanowires (NWs) have drawn much attention as nanoscale buil ding blocks for integrated photonics/optoelectronics due to their nanoscal e size\, excellent optical properties and effectiveness in strain relaxati on enabling the monolithic growth on lattice-mismatched substrates. In par ticular\, NWs grown by selective area epitaxy technique have many advantag es such as controllability of their size and position\, high uniformity in diameter and length\, as well as complementary metal-oxide-semiconductor (CMOS) process compatibility\, facilitating their integration with other e lectronic devices. With suitable wavelength ranging from 1.3 to 1.6 &mu\;m and lattice match of constituent materials\, InGaAs/InP quantum well (QW) has been being widely used for optical communication devices. However the re has been limited understanding on the growth of InGaAs/InP QW in nanowi re architecture and their application for optoelectronic devices such as l asers/LEDs and photodetectors. In this work\, we present the study of the selective area epitaxy growth of InGaAs/InP multi-QW NW array by metalorga nic chemical vapour deposition (MOCVD) technique\, and the demonstration o f nanowire LEDs/lasers and photodetectors with an investigation of their s trong geometry related device properties by both numerical simulation and optoelectronic characterizations.</p> END:VEVENT END:VCALENDAR