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DTSTAMP:20230128T231011Z
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DTSTART;TZID=US/Eastern:20220505T153000
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DESCRIPTION:Abstract: This talk will describe recent advances in synthesis 
 and doping of two-dimensional materials. In Our synthesis efforts focus on
  (1) growing ultra-pure crystals of transition metal dichalcogenides (TMDs
 )\, which show dramatic improvements in performance compared to commercial
 ly obtained TMDs and new techniques for graphene chemical vapor deposition
 \; and (2) new strategies for graphene CVD synthesis based on removing tra
 ce impurities to below the parts-per-billion level\, which dramatically im
 proves both the speed and reproducibility of graphene synthesis. The secon
 d part of the talk will describe the use of oxidized tungsten selenide as 
 a low-disorder hole-dopant for graphene. The doping level can be controlle
 d through the use of tungsten selenide spacer layers\, which also dramatic
 ally improves the graphene mobility by spatially separating the dopant lay
 er from the graphene. The doped graphene is highly transparent in the infr
 ared\, and can be used as an ultralow-loss conducting layer for infrared p
 hotonics. The doped graphene shows strong plasmonic response\, and local d
 oping can be used to create engineered plasmonic structures. The third par
 t of the talk will describe our efforts to understand the behavior of meta
 llic contacts to semiconducting TMDs. We find that metal-TMD contacts that
  are assembled non-invasively show a combination of low contact resistance
  and ultra-long transfer length – putting them in a very different regim
 e from traditional metal-semiconductor contacts.\n\nBiography: James Hone 
 is currently Wang Fong-Jen Professor and Chair of the Department of Mechan
 ical Engineering at Columbia University. He was director of Columbia’s M
 aterials Science Research and Engineering Center (MRSEC) from 2014-2021. H
 e received his BS in physics from Yale in 1990\, and PhD in experimental c
 ondensed matter physics from UC Berkeley in 1998\, and did postdoctoral wo
 rk at the University of Pennsylvania and Caltech\, where he was a Millikan
  Fellow. He joined the Columbia faculty in 2003.\n\nBldg: 101 Davis Hall\,
  Department of Electrical Engineering\, University at Buffalo\, Amherst\, 
 New York\, United States\, Virtual: https://events.vtools.ieee.org/m/31348
 1
LOCATION:Bldg: 101 Davis Hall\, Department of Electrical Engineering\, Univ
 ersity at Buffalo\, Amherst\, New York\, United States\, Virtual: https://
 events.vtools.ieee.org/m/313481
ORGANIZER:jmmoskal@ieee.org
SEQUENCE:2
SUMMARY:IEEE EDS Chapter presents: 2D Materials: Advances in Synthesis\, Do
 ping\, and Contacts
URL;VALUE=URI:https://events.vtools.ieee.org/m/313481
X-ALT-DESC:Description: <br /><p><strong>Abstract: &nbsp\;</strong>This tal
 k will describe recent advances in synthesis and doping of two-dimensional
  materials.&nbsp\; In Our synthesis efforts focus on (1) growing ultra-pur
 e crystals of transition metal dichalcogenides (TMDs)\, which show dramati
 c improvements in performance compared to commercially obtained TMDs and n
 ew techniques for graphene chemical vapor deposition\; and (2) new strateg
 ies for graphene CVD synthesis based on removing trace impurities to below
  the parts-per-billion level\, which dramatically improves both the speed 
 and reproducibility of graphene synthesis.&nbsp\; The second part of the t
 alk will describe the use of oxidized tungsten selenide as a low-disorder 
 hole-dopant for graphene. The doping level can be controlled through the u
 se of tungsten selenide spacer layers\, which also dramatically improves t
 he graphene mobility by spatially separating the dopant layer from the gra
 phene. The doped graphene is highly transparent in the infrared\, and can 
 be used as an ultralow-loss conducting layer for infrared photonics.&nbsp\
 ;&nbsp\; The doped graphene shows strong plasmonic response\, and local do
 ping can be used to create engineered plasmonic structures.&nbsp\; The thi
 rd part of the talk will describe our efforts to understand the behavior o
 f metallic contacts to semiconducting TMDs. We find that metal-TMD contact
 s that are assembled non-invasively show a combination of low contact resi
 stance and ultra-long transfer length &ndash\; putting them in a very diff
 erent regime from traditional metal-semiconductor contacts.<br /><br /></p
 >\n<p><strong>Biography:&nbsp\; </strong>James Hone is currently Wang Fong
 -Jen Professor and Chair of the Department of Mechanical Engineering at Co
 lumbia University.&nbsp\; He was director of Columbia&rsquo\;s Materials S
 cience Research and Engineering Center (MRSEC) from 2014-2021.&nbsp\; He r
 eceived his BS in physics from Yale in 1990\, and PhD in experimental cond
 ensed matter physics from UC Berkeley in 1998\, and did postdoctoral work 
 at the University of Pennsylvania and Caltech\, where he was a Millikan Fe
 llow.&nbsp\; He joined the Columbia faculty in 2003.&nbsp\;</p>
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