BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:Asia/Shanghai BEGIN:STANDARD DTSTART:19910915T010000 TZOFFSETFROM:+0900 TZOFFSETTO:+0800 TZNAME:CST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230210T121250Z UID:E0F8A89A-B859-4680-8DAE-01D6D9546436 DTSTART;TZID=Asia/Shanghai:20220820T090000 DTEND;TZID=Asia/Shanghai:20220820T170000 DESCRIPTION:In commemoration of the 75th Anniversary of the Invention of th e Transistor\, the IEEE Electron Devices Beijing Chapter will hold a mini colloquium (MQ) entitled\, “Can the sub-6nm node meet 6G?” The MQ will be a half-day hybrid event co-located between the CAD-TFT 2022 (http://ca d-tft.org) and IFETC 2022 (https://attend.ieee.org/ifetc-2022/) conference s\, and will take place in the afternoon of Aug 20\, 2022 at Haiqing Hotel \, Qingdao\, China.\n\nThe MQ will host a broad range of topics to represe nt the multi-disciplinary nature of the emerging GHz devices and circuits and millimeter-wave (mmWave) applications. In particular\, we see how the silicon integrated circuit (IC) is continuing to have an unprecedented imp act on every aspect of modern society\, ranging from communications and se curity to healthcare and industrial automation. Over the last five decades \, the relentless pursuit of IC device miniaturization for manufacturing h igh-performance and high-density very large scale integrated (VLSI) circui ts and systems has led to the creation of a digital society. Operating spe eds continue to be pushed to increasingly higher and higher frequencies en abling baseband operation in mobile devices in the 30 GHz vicinity\, which is expected to provide more bandwidth and lower latency. Millimeter-wave communications will soon become part of the 5G/6G standards\, alongside de velopments to push communications to the THz bands. The availability of ba ndwidth at these frequencies will offer a multitude of opportunities to in crease throughput of a new generation of wireless networks. Although this area of research is relatively new\, we witness a tremendous growth in the literature related to the electromagnetic properties of mmWave communicat ions\, and in particular\, free space propagation loss and its susceptibil ity to hindrances.\n\nThis MQ will present a forum for engineers and scien tists to discuss these issues and hear recent developments from experts in areas ranging from transistors and integrated circuits to antennas & prop agation and communication networks\, and to discuss the challenges faced i n design of 6G transceiver systems and networks.\n\nAgenda: \n9:00AM\n\nHi gh Performance III-N Devices for 6G and Beyond\n\nPatrick Fay\, IEEE Fello w\, IEEE EDS Distinguished Lecturer\, University of Notre Dame\, USA\n\nAc hieving the vision and promise of 6G (and beyond) and other wireless commu nication systems requires significant advancements in device technologies. To obtain the high bandwidths required in 6G systems on a mobile platform \, devices offering millimeter-wave performance with low power consumption while simultaneously delivering low noise figure\, high linearity\, and h igh power efficiency are essential. The unique properties of the III-N mat erial system enable new approaches for designing millimeter-wave transisto rs for power amplifiers\, low-noise amplifiers\, and signal switching and routing. In this talk\, recent advances in these areas will be presented.\ n\n9:30AM\n\nDifferentiated Silicon Technologies to enable 6G radio\n\nAni rban Bandyopadhyay\, IEEE Fellow\, IEEE EDS Distinguished Lecturer\, Globa l Foundries Inc\, CA\, USA\n\nThe advances in nanofabrication have enabled more effective tools for communication in the mmWave and THz frequencies. One key feature of sub-THz communication is it enables on-chip beamformin g that can significantly improve the channel capacity. However\, in additi on to the increased path loss\, water absorption\, and NLOS reflections\, the efficiency of generation\, phase shift\, and calibration of THz signal power has been one of the biggest challenges for the wide adoption of THz communication. In this talk\, I will share some novel architectures of in tegrated beamforming methods to improve the efficiency of THz phased array communication.\n\n10:00AM\n\nInvention that Changed the World: Evolution of Transistors Enabling Digital Ecosystem\n\nSamar Saha\, IEEE life Fellow \, IEEE EDS Distinguished Lecturer\, Prospicient Devices\, CA\, USA\n\nFor every new generation of scaled CMOS device technology\, the performance o f ICs continued to improve with decreasing manufacturing cost. The high pe rformance and low-cost ICs enabling wireless communications\; online healt hcare\; smart-homes with digital security\, energy-saving and self-service -call appliances\, and infotainment and entertainment and so on. The enabl ing network of networks is integrated into a single ecosystem to create sm art environments with a shared user interface. This progress in the modern society has evolved from the point contact transistor-to-invention of tra nsistor leading to relentless pursuit of the state-of-the art transistor d evice technologies at the 6-nanometer nodes and beyond. The ability to fab ricate billions of individual transistors in a silicon chip of a few cm2 h as enabled the information age of smart environments and integrated ecosys tems. In this talk\, a brief overview of the continuous evolution of the I C device structure and manufacturing technology enabling digital ecosystem is presented.\n\n1:00PM\n\nIntegrated phased array sub-THz transceivers f or 6G communication\n\nXuyang Lu\, Shanghai Jiao Tong University\, China\n \nThe advances in nanofabrication have enabled more effective tools for co mmunication in the mmWave and THz frequencies. One key feature of sub-THz communication is it enables on-chip beamforming that can significantly imp rove the channel capacity. However\, in addition to the increased path los s\, water absorption\, and NLOS reflections\, the efficiency of generation \, phase shift\, and calibration of THz signal power has been one of the b iggest challenges for the wide adoption of THz communication. In this talk \, I will share some novel architectures of integrated beamforming methods to improve the efficiency of THz phased array communication.\n\n1:30PM\n\ nTerahertz Communications for 6G and Beyond: Challenges\, Advances and Fut ure Directions\n\nChong Han\, Shanghai Jiao Tong University\, China\n\nThi s talk will provide a comprehensive look at cutting-edge THz communication s strategies for 6G and beyond wireless networks. Finally\, this talk will identify and discuss the out-standing barriers that future wireless syste m designers must tackle to reap the full benefits of THz communications in the 6G and beyond era.\n\n2:00PM\n\nCMOS Power Amplifiers and VCO Design Perspectives for 6G Wireless Communication\n\nJagadheswaran Rajendran\, IE EE Senior Member\, University Science Malaysia\, Penang\, Malaysia\n\nCase studies are introduced on the various design techniques for the power amp lifier (PA) and voltage controlled oscillator (VCO)\, not limiting to Dohe rty concept\, analog predistorter linearizer\, transformer based output ma tching network\, bias tuning\, varactor tuning with enhanced negative resi stance\, inductive tuning and indirect varactor tuning. Finally\, the emer ging materials for THz amplifiers into the next decade shall be discussed in this talk.\n\n2:30PM\n\nMonolithic Co- integration of III-V Materials i nto Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits\n\nZhou Xing\, IEEE EDS Distinguished Lecturer\, NTU\, Singapore\n\nThe SMART-LEE S (Singapore MIT Alliance for Research and Technology – Low Energy Elect ronic Systems) program is such a “vertical” innovative platform by “ inserting” III-V layers into a conventional Si-CMOS foundry process. Thi s talk presents an overview of the SMART-LEES program as well as a unified compact model for generic GaN/InGaAs-based HEMTs in the context of the hy brid III-V + CMOS technology developed for future heterogeneous integrated circuits. The developed model has been implemented in a hybrid III-V/CMOS foundry PDK for designing heterogeneous circuits in III-V/Si monolithical ly co-integrated technology.\n\n3:00PM\n\nHigh Frequency Characterization and Modeling of FinFETs\n\nYogesh Chauhan\, IEEE Fellow\, IEEE EDS Disting uished Lecturer\, IIT Kanpur\, India\n\nIn this presentation\, we will dis cuss the electrical characterization and modeling of FinFETs at high frequ encies. We will also discuss the impact of gate resistance and self-heatin g on RF characteristics.\n\n3:30PM\n\nDistributed large MIMO and reconfigu rable intelligent surfaces for 6G\n\nTommy Svensson\, Chalmers University of Technology\, Sweden\n\nIn this talk I will introduce our ongoing resear ch towards 6G at Chalmers with a special focus on distributed large MIMO ( D-MIMO) and reconfigurable intelligent surfaces (RIS). D-MIMO and RISs are promising techniques to meet the envisioned required capabilities in 6G o n communications\, localization and sensing due to their potential of dens ification that will enable both more efficient\, reliable\, high capacity and low latency communications\, as well as more accurate localization and sensing.\n\nHaiqing Hotel\, Qingdao\, Shandong\, China\, Virtual: https:/ /events.vtools.ieee.org/m/319628 LOCATION:Haiqing Hotel\, Qingdao\, Shandong\, China\, Virtual: https://even ts.vtools.ieee.org/m/319628 ORGANIZER:yiyang@tsinghua.edu.cn SEQUENCE:9 SUMMARY:Mini Colloquium：Can the sub-6nm node meet 6G? URL;VALUE=URI:https://events.vtools.ieee.org/m/319628 X-ALT-DESC:Description: <br /><p>In commemoration of the 75th Anniversary o f the Invention of the Transistor\, the IEEE Electron Devices Beijing Chap ter will hold a mini colloquium (MQ) entitled\, &ldquo\;Can the sub-6nm no de meet 6G?&rdquo\; The MQ will be a half-day hybrid event co-located betw een the CAD-TFT 2022 (<a href="http://cad-tft.org"><u>http://cad-tft.org</ u></a>) and IFETC 2022 (<a href="https://attend.ieee.org/ifetc-2022/"><u>h ttps://attend.ieee.org/ifetc-2022/</u></a>) conferences\, and will take pl ace in the afternoon of Aug 20\, 2022 at Haiqing Hotel\, Qingdao\, China.< /p>\n<p>The MQ will host a broad range of topics to represent the multi-di sciplinary nature of the emerging GHz devices and circuits and millimeter- wave (mmWave) applications. In particular\, we see how the silicon integra ted circuit (IC) is continuing to have an unprecedented impact on every as pect of modern society\, ranging from communications and security to healt hcare and industrial automation. Over the last five decades\, the relentle ss pursuit of IC device miniaturization for manufacturing high-performance and high-density very large scale integrated (VLSI) circuits and systems has led to the creation of a digital society. Operating speeds continue to be pushed to increasingly higher and higher frequencies enabling baseband operation in mobile devices in the 30 GHz vicinity\, which is expected to provide more bandwidth and lower latency. Millimeter-wave communications will soon become part of the 5G/6G standards\, alongside developments to p ush communications to the THz bands. The availability of bandwidth at thes e frequencies will offer a multitude of opportunities to increase throughp ut of a new generation of wireless networks. Although this area of researc h is relatively new\, we witness a tremendous growth in the literature rel ated to the electromagnetic properties of mmWave communications\, and in p articular\, free space propagation loss and its susceptibility to hindranc es.</p>\n<p>This MQ will present a forum for engineers and scientists to d iscuss these issues and hear recent developments from experts in areas ran ging from transistors and integrated circuits to antennas &amp\; propagati on and communication networks\, and to discuss the challenges faced in des ign of 6G transceiver systems and networks.</p><br /><br />Agenda: <br />< p><strong>9:00AM</strong></p>\n<p><span style="color: #843fa1\;"><strong>H igh Performance III-N Devices for 6G and Beyond</strong></span></p>\n<p><s trong><span style="color: #843fa1\;">Patrick Fay\, IEEE Fellow\, IEEE EDS Distinguished Lecturer\, </span></strong><strong><span style="color: #843f a1\;">University of Notre Dame\, USA &nbsp\;</span></strong></p>\n<p>Achie ving the vision and promise of 6G (and beyond) and other wireless communic ation systems requires significant advancements in device technologies. To obtain the high bandwidths required in 6G systems on a mobile platform\, devices offering millimeter-wave performance with low power consumption wh ile simultaneously delivering low noise figure\, high linearity\, and high power efficiency are essential. The unique properties of the III-N materi al system enable new approaches for designing millimeter-wave transistors for power amplifiers\, low-noise amplifiers\, and signal switching and rou ting. In this talk\, recent advances in these areas will be presented.</p> \n<p>&nbsp\;</p>\n<p><strong>9:30AM</strong></p>\n<p><span style="color: # 843fa1\;"><strong>Differentiated Silicon Technologies to enable 6G radio</ strong></span></p>\n<p><span style="color: #843fa1\;"><strong>Anirban Band yopadhyay\, IEEE Fellow\, IEEE EDS Distinguished Lecturer\, Global Foundri es Inc\, CA\, USA</strong></span></p>\n<p>The advances in nanofabrication have enabled more effective tools for communication in the mmWave and THz frequencies. One key feature of sub-THz communication is it enables on-chi p beamforming that can significantly improve the channel capacity. However \, in addition to the increased path loss\, water absorption\, and NLOS re flections\, the efficiency of generation\, phase shift\, and calibration o f THz signal power has been one of the biggest challenges for the wide ado ption of THz communication. In this talk\, I will share some novel archite ctures of integrated beamforming methods to improve the efficiency of THz phased array communication.</p>\n<p>&nbsp\;</p>\n<p><strong>10:00AM &nbsp\ ;&nbsp\;&nbsp\;&nbsp\;</strong></p>\n<p><span style="color: #843fa1\;"><st rong>Invention that Changed the World: Evolution of Transistors Enabling D igital Ecosystem &nbsp\;&nbsp\;</strong></span></p>\n<p><span style="color : #843fa1\;"><strong>Samar Saha\, IEEE life Fellow\, IEEE EDS Distinguishe d Lecturer\, Prospicient Devices\, CA\, USA</strong></span></p>\n<p>For ev ery new generation of scaled CMOS device technology\, the performance of I Cs continued to improve with decreasing manufacturing cost. The high perfo rmance and low-cost ICs enabling wireless communications\; online healthca re\; smart-homes with digital security\, energy-saving and self-service-ca ll appliances\, and infotainment and entertainment and so on. The enabling network of networks is integrated into a single ecosystem to create smart environments with a shared user interface. This progress in the modern so ciety has evolved from the point contact transistor-to-invention of transi stor leading to relentless pursuit of the state-of-the art transistor devi ce technologies at the 6-nanometer nodes and beyond. The ability to fabric ate billions of individual transistors in a silicon chip of a few cm2 has enabled the information age of smart environments and integrated ecosystem s. In this talk\, a brief overview of the continuous evolution of the IC d evice structure and manufacturing technology enabling digital ecosystem is presented.</p>\n<p>&nbsp\;</p>\n<p><strong>1:00PM</strong></p>\n<p><span style="color: #843fa1\;"><strong>Integrated phased array sub-THz transceiv ers for 6G communication</strong></span></p>\n<p><span style="color: #843f a1\;"><strong>Xuyang Lu\, Shanghai Jiao Tong University\, China</strong></ span></p>\n<p>The advances in nanofabrication have enabled more effective tools for communication in the mmWave and THz frequencies. One key feature of sub-THz communication is it enables on-chip beamforming that can signi ficantly improve the channel capacity. However\, in addition to the increa sed path loss\, water absorption\, and NLOS reflections\, the efficiency o f generation\, phase shift\, and calibration of THz signal power has been one of the biggest challenges for the wide adoption of THz communication. In this talk\, I will share some novel architectures of integrated beamfor ming methods to improve the efficiency of THz phased array communication.< /p>\n<p>&nbsp\;</p>\n<p><strong>1:30PM</strong></p>\n<p><span style="color : #843fa1\;"><strong>Terahertz Communications for 6G and Beyond: Challenge s\, Advances and Future Directions</strong></span></p>\n<p><span style="co lor: #843fa1\;"><strong>Chong Han\, Shanghai Jiao Tong University\, China< /strong></span></p>\n<p>This talk will provide a comprehensive look at cut ting-edge THz communications strategies for 6G and beyond wireless network s. Finally\, this talk will identify and discuss the out-standing barriers that future wireless system designers must tackle to reap the full benefi ts of THz communications in the 6G and beyond era.</p>\n<p>&nbsp\;</p>\n<p ><strong>2:00PM</strong></p>\n<p><span style="color: #843fa1\;"><strong>CM OS Power Amplifiers and VCO Design Perspectives for 6G Wireless Communicat ion</strong></span></p>\n<p><span style="color: #843fa1\;"><strong>Jagadhe swaran Rajendran\,&nbsp\; IEEE Senior Member\,&nbsp\; University Science M alaysia\, Penang\, Malaysia</strong></span></p>\n<p>Case studies are intro duced on the various design techniques for the power amplifier (PA) and vo ltage controlled oscillator (VCO)\, not limiting to Doherty concept\, anal og predistorter linearizer\, transformer based output matching network\, b ias tuning\, varactor tuning with enhanced negative resistance\, inductive tuning and indirect varactor tuning. Finally\, the emerging materials for THz amplifiers into the next decade shall be discussed in this talk.</p>\ n<p>&nbsp\;</p>\n<p><strong>2:30PM</strong></p>\n<p><span style="color: #8 43fa1\;"><strong>Monolithic Co- integration of III-V Materials into Foundr y Si-CMOS in a Single Chip for Novel Integrated Circuits</strong></span></ p>\n<p><span style="color: #843fa1\;"><strong>Zhou Xing\, IEEE EDS Disting uished Lecturer\, NTU\, Singapore</strong></span></p>\n<p>The SMART-LEES ( Singapore MIT Alliance for Research and Technology &ndash\; Low Energy Ele ctronic Systems) program is such a &ldquo\;vertical&rdquo\; innovative pla tform by &ldquo\;inserting&rdquo\; III-V layers into a conventional Si-CMO S foundry process. &nbsp\;This talk presents an overview of the SMART-LEES program as well as a unified compact model for generic GaN/InGaAs-based H EMTs in the context of the hybrid III-V + CMOS technology developed for fu ture heterogeneous integrated circuits. &nbsp\;The developed model has bee n implemented in a hybrid III-V/CMOS foundry PDK for designing heterogeneo us circuits in III-V/Si monolithically co-integrated technology.</p>\n<p>& nbsp\;</p>\n<p><strong>3:00PM</strong></p>\n<p><span style="color: #843fa1 \;"><strong>High Frequency Characterization and Modeling of FinFETs</stron g></span></p>\n<p><span style="color: #843fa1\;"><strong>Yogesh Chauhan\, IEEE Fellow\, IEEE EDS Distinguished Lecturer\, IIT Kanpur\, India</strong ></span></p>\n<p>In this presentation\, we will discuss the electrical cha racterization and modeling of FinFETs at high frequencies. We will also di scuss the impact of gate resistance and self-heating on RF characteristics .</p>\n<p>&nbsp\;</p>\n<p><strong>3:30PM</strong></p>\n<p><span style="col or: #843fa1\;"><strong>Distributed large MIMO and reconfigurable intellige nt surfaces for 6G</strong></span></p>\n<p><span style="color: #843fa1\;"> <strong>Tommy Svensson\, Chalmers University of Technology\, Sweden</stron g></span></p>\n<p>In this talk I will introduce our ongoing research towar ds 6G at Chalmers with a special focus on distributed large MIMO (D-MIMO) and reconfigurable intelligent surfaces (RIS). D-MIMO and RISs are promisi ng techniques to meet the envisioned required capabilities in 6G on commun ications\, localization and sensing due to their potential of densificatio n that will enable both more efficient\, reliable\, high capacity and low latency communications\, as well as more accurate localization and sensing .</p> END:VEVENT END:VCALENDAR