BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20220313T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20220731T214401Z UID:ED91BCAA-FA42-47C0-99E8-BEBBED14D843 DTSTART;TZID=America/New_York:20220727T183000 DTEND;TZID=America/New_York:20220727T200000 DESCRIPTION:Harnessing graphene’s properties on a silicon platform could augment integrated technologies with a broad range of novel miniaturized f unctionalities. We will review the learnings from the development of our e pitaxial graphene on silicon carbide on silicon technology and some of its most promising applications. This platform allows to obtain any complex g raphene -coated silicon carbide 3D nanostructures in a site – selective fashion at the wafer -scale and with sufficient adhesion for integration [ 1\, 2]. Key capabilities for nano-optics and metasurfaces in the MIR are s pecifically unlocked by the graphene/silicon carbide combination [3].\n\nW e have recently demonstrated that the sheet resistance of epitaxial graphe ne on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers\, despite substantially smaller grains. We also indicate that the control of the graphene interfaces\, particularly when integrated\, can be a more important factor than achieving large grain sizes [4]. In addition \, we show that well- engineered defects in graphene are preferable to def ect -free graphene for most electrochemical applications\, including biose nsing. Promising examples of application of this technology in the More th an Moore domain include integrated energy storage [5]\, MIR sensing and de tection [6]\, and sensors for electro-encephalography [7].\n\nCo-sponsored by: Lyceum-AN\, Northern Virginia Community College \, Nanotechnology Cou ncil Chapter\; Baltimore EDS/SSC Chapter\n\nSpeaker(s): Prof.Francesca Iac opi\, \n\nAgenda: \nhttps://www.nvcc.edu/annandale/_files/annandale-campus -map.pdf6:30 - 6:45 PM - Networking and Refreshments\n\n6:45 PM - 6:50 PM - Announcements and Introduction of Speaker\n\n6:50 PM to 7:35 PM - Talk\n \n7:35 PM - 7:45 PM - Questions and Answers\n\nRoom: CS Building Room 129\ , Bldg: Annandale Campus of Northern Virginia Community College\, 8333 Lit tle River Turnpike\,\, VA 22003\, Annandale\, Virginia\, United States\, V irtual: https://events.vtools.ieee.org/m/319738 LOCATION:Room: CS Building Room 129\, Bldg: Annandale Campus of Northern Vi rginia Community College\, 8333 Little River Turnpike\,\, VA 22003\, Annan dale\, Virginia\, United States\, Virtual: https://events.vtools.ieee.org/ m/319738 ORGANIZER:murtyp@ieee.org SEQUENCE:7 SUMMARY:Graphene on cubic silicon carbide: a platform on silicon for More-T han-Moore integrated technologies URL;VALUE=URI:https://events.vtools.ieee.org/m/319738 X-ALT-DESC:Description: <br /><p>Harnessing graphene&rsquo\;s properties on a silicon platform could augment integrated technologies with a broad ran ge of novel miniaturized functionalities. We will review the learnings fro m the development of our epitaxial graphene on silicon carbide on silicon technology and some of its most promising applications. This platform allo ws to obtain any complex graphene -coated silicon carbide 3D nanostructure s in a site &ndash\; selective fashion at the wafer -scale and with suffic ient adhesion for integration [1\, 2]. Key capabilities for nano-optics an d metasurfaces in the MIR are specifically unlocked by the graphene/silico n carbide combination [3].</p>\n<p>We have recently demonstrated that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers\, despite substantially smalle r grains. We also indicate that the control of the graphene interfaces\, p articularly when integrated\, can be a more important factor than achievin g large grain sizes [4]. In addition\, we show that well- engineered defec ts in graphene are preferable to defect -free graphene for most electroche mical applications\, including biosensing. Promising examples of applicati on of this technology in the More than Moore domain include integrated ene rgy storage [5]\, MIR sensing and detection [6]\, and sensors for electro- encephalography [7].</p><br /><br />Agenda: <br /><p><a title="https://www .nvcc.edu/annandale/_files/annandale-campus-map.pdf" href="https://www.nvc c.edu/annandale/_files/annandale-campus-map.pdf">https://www.nvcc.edu/anna ndale/_files/annandale-campus-map.pdf</a>6:30 - 6:45 PM - Networking and R efreshments</p>\n<p>6:45 PM - 6:50 PM - Announcements and Introduction of Speaker</p>\n<p>6:50 PM to 7:35 PM - Talk</p>\n<p>7:35 PM - 7:45 PM - Ques tions and Answers</p> END:VEVENT END:VCALENDAR