BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/New_York BEGIN:DAYLIGHT DTSTART:20220313T030000 TZOFFSETFROM:-0500 TZOFFSETTO:-0400 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:EDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0400 TZOFFSETTO:-0500 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:EST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20220801T204221Z UID:AD13AC83-DE5B-43FC-8EBF-A8FAB84F2D3B DTSTART;TZID=America/New_York:20220729T150000 DTEND;TZID=America/New_York:20220729T160000 DESCRIPTION:This Friday 3 pm is open to students (primarily Air Force Insti tute of Technology\, but all invited) presenting a 15 min (or so) talk on what interests them. Open to any & all students\, so pass the word. This i s a good place for young folks to teach something new to old folks who sti ll like to learn\, & / or forgot what it was like to be young.\n\nCo-spons ored by: Wright-Patt Multi-Intelligence Development Consortium (WPMDC)\, T he DOD & DOE Communities\n\nSpeaker(s): Eric Fairchild\, \n\nAgenda: \nTIT LE: GaN COTS HEMT Reliability Test Plan\n\nABSTRACT: Commercial off the sh elf (COTS) Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs ) are widely used in high power/frequency applications due to GaN’s elec trical properties which include a wide direct bandgap of approximately 3.4 eV. GaN’s inherent wide spacing between the valence band maximum and con duction band minimum are what allow GaN to perform at higher power levels\ , frequencies\, and temperature conditions than that of conventional semic onductor materials\, such as silicon. However\, unlike silicon-based devic es which have established qualification standards\, qualifying GaN devices into new and existing systems takes additional time because there is curr ently no widely accepted standard for evaluating the reliability of GaN tr ansistors. This test plan seeks to detail the I-V characterization and rel iability testing on a number of GaN COTS devices from various manufacturer s to identify gate leakage current as an identifying factor of device reli ability.\n\nVirtual: https://events.vtools.ieee.org/m/320618 LOCATION:Virtual: https://events.vtools.ieee.org/m/320618 ORGANIZER:a.j.terzuoli@ieee.org SEQUENCE:2 SUMMARY:Weekly "Inverted Conference" Seminar in Remote Sensing & Communicat ion URL;VALUE=URI:https://events.vtools.ieee.org/m/320618 X-ALT-DESC:Description: <br /><p><strong>This Friday 3 pm is open to studen ts (primarily Air Force Institute of Technology\, but all invited) present ing a 15 min (or so) talk on what interests them.&nbsp\; Open to any &amp\ ; all students\, so pass the word.&nbsp\; This is a good place for young f olks to teach something new to old folks who still like to learn\, &amp\; / or forgot what it was like to be young.</strong></p><br /><br />Agenda: <br /><p><strong>TITLE:&nbsp\;&nbsp\;GaN COTS HEMT Reliability Test Plan</ strong></p>\n<p><strong>&nbsp\;</strong></p>\n<p><strong>ABSTRACT:&nbsp\;& nbsp\;Commercial off the shelf (COTS) Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are widely used in high power/frequency appli cations due to GaN&rsquo\;s electrical properties which include a wide dir ect bandgap of approximately 3.4eV. GaN&rsquo\;s inherent wide spacing bet ween the valence band maximum and conduction band minimum are what allow G aN to perform at higher power levels\, frequencies\, and temperature condi tions than that of conventional semiconductor materials\, such as silicon. However\, unlike silicon-based devices which have established qualificati on standards\, qualifying GaN devices into new and existing systems takes additional time because there is currently no widely accepted standard for evaluating the reliability of GaN transistors. This test plan seeks to de tail the I-V characterization and reliability testing on a number of GaN C OTS devices from various manufacturers to identify gate leakage current as an identifying factor of device reliability.</strong></p> END:VEVENT END:VCALENDAR