BEGIN:VCALENDAR
VERSION:2.0
PRODID:IEEE vTools.Events//EN
CALSCALE:GREGORIAN
BEGIN:VTIMEZONE
TZID:US/Eastern
BEGIN:DAYLIGHT
DTSTART:20220313T030000
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3
TZNAME:EDT
END:DAYLIGHT
BEGIN:STANDARD
DTSTART:20221106T010000
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11
TZNAME:EST
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTAMP:20220918T120010Z
UID:AF5581AF-0013-4BC9-BB6E-A3FBCC07545B
DTSTART;TZID=US/Eastern:20220914T110000
DTEND;TZID=US/Eastern:20220914T120000
DESCRIPTION:FREE Webinar\n\nMagnetic tunnel junctions (MTJs) represent the 
 most useful devices coming out of spintronics research. Besides serving as
  the key components for magnetic field sensors and digital magnetic random
  access memories\, magnetic tunnel junctions have recently been studied as
  building blocks for non-conventional computing\, via utilizing their func
 tions of non-linearity\, stochasticity\, etc.\n\nIn this presentation we b
 egin with the fundamental aspects of these devices and then share some of 
 our research\, as well as reliability-related issues found.\n\nIn one of t
 he early works\, we demonstrated that by designing multi-domain MTJs\, one
  can realize synaptic devices and activation function devices for convolut
 ional neural network\, where the synaptic weight and threshold function ar
 e realized by controlling the position of magnetic domain walls. Recently\
 , we explore the possibility of building Hopfield neural network with MTJs
  by using their oscillatory or probabilistic switching properties. These c
 omputing hardwares\, known as Boltzmann machine or Ising machine can be us
 ed to solve NP-hard combinatorial optimization problems more efficiently t
 han traditional von Neumann architectures. Particularly\, we look into the
  dynamical behavior of an electrically coupled array of gigahertz spin Hal
 l nano-oscillators\, a device where the magnetic layers of the forming MTJ
 s undergo persistent precession. By developing a general analytical framew
 ork that describes injection locking of spin Hall oscillators with large p
 recession angles\, we show the mapping between the coupled oscillators’ 
 properties and the Ising model. We then integrate the analytical model int
 o a versatile Verilog-A device that can emulate the coupled dynamics of sp
 in Hall oscillators in circuit simulators. This abstract model allows for 
 the analysis of the performance of the spin Hall oscillator network at the
  circuit level using conventional electronic components and considering ph
 ase noise and scalability. The results provide design insights and analysi
 s tools toward the realization of a CMOS-integrated spin Hall oscillator I
 sing machine operating with a high degree of time\, space\, and energy eff
 iciency.\n\nSpeaker(s): Luqiao Liu\, \n\nAgenda: \n11:00 AM Technical Pres
 entation\n\n11:45 AM Questions and Answers\n\n12:00 PM Adjournment\n\nVirt
 ual: https://events.vtools.ieee.org/m/322887
LOCATION:Virtual: https://events.vtools.ieee.org/m/322887
ORGANIZER:michael.bannan@ieee.org
SEQUENCE:10
SUMMARY:Webinar - Magnetic Tunnel Junctions for Non-Conventional Computing
URL;VALUE=URI:https://events.vtools.ieee.org/m/322887
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;&lt;em&gt;FREE Webinar&lt;/em&gt;&lt;/strong&gt;&lt;/p&gt;
 \n&lt;p class=&quot;western&quot;&gt;&lt;span style=&quot;font-family: Times New Roman\, serif\;&quot;&gt;
 Magnetic tunnel junctions (MTJs) represent the most useful devices coming 
 out of spintronics research. Besides serving as the key components for mag
 netic field sensors and digital magnetic random access memories\, magnetic
  tunnel junctions have recently been studied as building blocks for non-co
 nventional computing\, via utilizing their functions of non-linearity\, st
 ochasticity\, etc. &lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;western&quot;&gt;&lt;span style=&quot;font-famil
 y: Times New Roman\, serif\;&quot;&gt;In this presentation we begin with the funda
 mental aspects of these devices and then share some of our research\, as w
 ell as reliability-related issues found. &lt;/span&gt;&lt;/p&gt;\n&lt;p class=&quot;western&quot;&gt;&lt;
 span style=&quot;font-family: Times New Roman\, serif\;&quot;&gt;In one of the early wo
 rks\, we demonstrated that by designing multi-domain MTJs\, one can realiz
 e synaptic devices and activation function devices for convolutional neura
 l network\, where the synaptic weight and threshold function are realized 
 by controlling the position of magnetic domain walls. Recently\, we explor
 e the possibility of building Hopfield neural network with MTJs by using t
 heir oscillatory or probabilistic switching properties. These computing ha
 rdwares\, known as Boltzmann machine or Ising machine can be used to solve
  NP-hard combinatorial optimization problems more efficiently than traditi
 onal von Neumann architectures. Particularly\, we look into the dynamical 
 behavior of an electrically coupled array of gigahertz spin Hall nano-osci
 llators\, a device where the magnetic layers of the forming MTJs undergo p
 ersistent precession. By developing a general analytical framework that de
 scribes injection locking of spin Hall oscillators with large precession a
 ngles\, we show the mapping between the coupled oscillators&amp;rsquo\; proper
 ties and the Ising model. We then integrate the analytical model into a ve
 rsatile Verilog-A device that can emulate the coupled dynamics of spin Hal
 l oscillators in circuit simulators. This abstract model allows for the an
 alysis of the performance of the spin Hall oscillator network at the circu
 it level using conventional electronic components and considering phase no
 ise and scalability. The results provide design insights and analysis tool
 s toward the realization of a CMOS-integrated spin Hall oscillator Ising m
 achine operating with a high degree of time\, space\, and energy efficienc
 y.&lt;/span&gt;&lt;/p&gt;\n&lt;p&gt;&amp;nbsp\;&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p&gt;&amp;nbsp\;&lt;/p&gt;\n&lt;p&gt;
 &lt;strong&gt;11:00 AM&lt;/strong&gt;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;Technical Presentation&lt;/p&gt;\n
 &lt;p&gt;&lt;strong&gt;11:45 AM&lt;/strong&gt;&amp;nbsp\;&amp;nbsp\; Questions and Answers&lt;/p&gt;\n&lt;p&gt;&lt;
 strong&gt;12:00 PM&lt;/strong&gt;&amp;nbsp\;&amp;nbsp\;&amp;nbsp\;Adjournment&lt;/p&gt;
END:VEVENT
END:VCALENDAR

