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DTSTAMP:20221115T143126Z
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DTSTART;TZID=Europe/Copenhagen:20221115T140000
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DESCRIPTION:Conventional CMOS technology has reached the brink of its scali
 ng limits and poses significant challenges for the development of next gen
 eration high-speed\, low-power\, cost-effective memory\, and processing de
 vices. In the post-CMOS era\, “Spintronics” could emerge as a potentia
 lly viable interdisciplinary field with credible technological perspective
 s. This technology exploits an electron’s spin orientation and its assoc
 iated magnetic moment as a state variable instead of a conventionally used
  charge in CMOS technology. In general\, spintronic devices are layered st
 ructures of magnetic materials that provide the non-volatile storage optio
 ns and manipulations of logic states. Spin transfer torque (STT) and spin 
 orbit torque (SOT) devices using magnetic tunnel junctions (MTJs) have bec
 ome strong contenders for the non-volatile embedded memory architectures w
 ith the capability of implementing the concepts of "logic-in-memory" and "
 material-device-circuit co-design". The spin torque devices offer the feat
 ures of "universal memory"\, i.e. high-speed\, nonvolatility\, high densit
 y\, and low-power\, high-endurance and CMOS process compatibility. The mem
 ory density is in ever increasing demand due to complex functionalities an
 d storage requirements. This talk presents the operation principle and per
 formance comparison of spintronics based single-bit STT and SOT magnetic R
 AM (MRAM)\, dual-level cells (DLCs)\, three-level cells (TLCs)\, and four-
 level cells (FLCs). It is observed that the multilevel MRAM technology is 
 far more efficient in terms of static power consumption and area overhead\
 , respectively as compared to the available SRAMs. This talk will also dis
 cuss in-memory computing circuits using multi-level cells.\n\nSpeaker(s): 
 Brajesh Kumar Kaushik\, \n\nVirtual: https://events.vtools.ieee.org/m/3246
 59
LOCATION:Virtual: https://events.vtools.ieee.org/m/324659
ORGANIZER:moradi@eng.au.dk
SEQUENCE:1
SUMMARY:IEEE CASS Distinguished Lecture titled 'In-Memory Computing Circuit
 s Using Multi Level Spin Memories'
URL;VALUE=URI:https://events.vtools.ieee.org/m/324659
X-ALT-DESC:Description: <br /><p>Conventional CMOS technology has reached t
 he brink of its scaling limits and poses significant challenges for the de
 velopment of next generation high-speed\, low-power\, cost-effective memor
 y\, and processing devices. In the post-CMOS era\, &ldquo\;Spintronics&rdq
 uo\; could emerge as a potentially viable interdisciplinary field with cre
 dible technological perspectives. This technology exploits an electron&rsq
 uo\;s spin orientation and its associated magnetic moment as a state varia
 ble instead of a conventionally used charge in CMOS technology. In general
 \, spintronic devices are layered structures of magnetic materials that pr
 ovide the non-volatile storage options and manipulations of logic states. 
 Spin transfer torque (STT) and spin orbit torque (SOT) devices using magne
 tic tunnel junctions (MTJs) have become strong contenders for the non-vola
 tile embedded memory architectures with the capability of implementing the
  concepts of "logic-in-memory" and "material-device-circuit co-design". Th
 e spin torque devices offer the features of "universal memory"\, i.e. high
 -speed\, nonvolatility\, high density\, and low-power\, high-endurance and
  CMOS process compatibility. The memory density is in ever increasing dema
 nd due to complex functionalities and storage requirements. This talk pres
 ents the operation principle and performance comparison of spintronics bas
 ed single-bit STT and SOT magnetic RAM (MRAM)\, dual-level cells (DLCs)\, 
 three-level cells (TLCs)\, and four-level cells (FLCs). It is observed tha
 t the multilevel MRAM technology is far more efficient in terms of static 
 power consumption and area overhead\, respectively as compared to the avai
 lable SRAMs. This talk will also discuss in-memory computing circuits usin
 g multi-level cells.</p>
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