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DTSTART:20380119T001407
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DTSTAMP:20221006T185758Z
UID:A5525423-8C13-4FF9-9D51-4CCC6C19EA88
DTSTART;TZID=America/Sao_Paulo:20221003T153000
DTEND;TZID=America/Sao_Paulo:20221003T170000
DESCRIPTION:Distinguished Lecturer Presentation.\n\nHarnessing graphene’s
  properties on a silicon platform could augment integrated technologies wi
 th a broad range of novel miniaturized functionalities. We will review the
  learnings from the development of our epitaxial graphene on silicon carbi
 de on silicon technology and some of its most promising applications. This
  platform allows to obtain any complex graphene -coated silicon carbide 3D
  nanostructures in a site – selective fashion at the wafer -scale and wi
 th sufficient adhesion for integration. Key capabilities for nano-optics a
 nd metasurfaces in the MIR are specifically unlocked by the graphene/silic
 on carbide combination.\n\nWe have recently demonstrated that the sheet re
 sistance of epitaxial graphene on 3C-SiC on silicon is comparable to that 
 of epitaxial graphene on SiC wafers\, despite substantially smaller grains
 . We also indicate that the control of the graphene interfaces\, particula
 rly when integrated\, can be a more important factor than achieving large 
 grain sizes. In addition\, we show that well- engineered defects in graphe
 ne are preferable to defect -free graphene for most electrochemical applic
 ations\, including biosensing. Promising examples of application of this t
 echnology in the More than Moore domain include integrated energy storage\
 , MIR sensing and detection\, and sensors for electro-encephalography.\n\n
 Speaker(s): Francesca Iacopi\, \n\nRoom: Auditório Valentim\, Bldg: J\, A
 v. Humberto de Alencar Castelo Branco 3972\, São Bernardo do Campo\, Sao 
 Paulo\, Brazil\, 09850-901
LOCATION:Room: Auditório Valentim\, Bldg: J\, Av. Humberto de Alencar Cast
 elo Branco 3972\, São Bernardo do Campo\, Sao Paulo\, Brazil\, 09850-901
ORGANIZER:michelly@fei.edu.br
SEQUENCE:2
SUMMARY:A graphene platform on silicon for More-than-Moore technologies
URL;VALUE=URI:https://events.vtools.ieee.org/m/325473
X-ALT-DESC:Description: <br /><p>Distinguished Lecturer Presentation.</p>\n
 <p>Harnessing graphene&rsquo\;s properties on a silicon platform could aug
 ment integrated technologies with a broad range of novel miniaturized func
 tionalities. We will review the learnings from the development of our epit
 axial graphene on silicon carbide on silicon technology and some of its mo
 st promising applications. This platform allows to obtain any complex grap
 hene -coated silicon carbide 3D nanostructures in a site &ndash\; selectiv
 e fashion at the wafer -scale and with sufficient adhesion for integration
 . Key capabilities for nano-optics and metasurfaces in the MIR are specifi
 cally unlocked by the graphene/silicon carbide combination. <br /><br />We
  have recently demonstrated that the sheet resistance of epitaxial graphen
 e on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC 
 wafers\, despite substantially smaller grains. We also indicate that the c
 ontrol of the graphene interfaces\, particularly when integrated\, can be 
 a more important factor than achieving large grain sizes. In addition\, we
  show that well- engineered defects in graphene are preferable to defect -
 free graphene for most electrochemical applications\, including biosensing
 . Promising examples of application of this technology in the More than Mo
 ore domain include integrated energy storage\, MIR sensing and detection\,
  and sensors for electro-encephalography.</p>
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