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DTSTART:20220313T030000
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BEGIN:VEVENT
DTSTAMP:20221117T004158Z
UID:0AABF7A0-FF3F-417C-9FAE-A3655B13F143
DTSTART;TZID=America/Los_Angeles:20221027T114500
DTEND;TZID=America/Los_Angeles:20221027T130000
DESCRIPTION:Abstract:\n\nAluminum Nitride (AlN) is a well-established thin 
 film piezoelectric material. AlN bulk acoustic wave (BAW) radio frequency 
 (RF) filters were one of the key innovations that enabled the 3G and 4G sm
 art phone revolution. Recently\, the substitutional doping of scandium (Sc
 ) for aluminum (Al) to form aluminum scandium nitride (AlScN) has been stu
 died to significantly enhance the piezoelectric properties and to introduc
 e ferroelectric properties into AlN based material systems. The properties
  achieved have profound implications for the performance of future 5G and 
 6G RF filters\, piezoelectric sensors\, piezoelectric energy harvesters\, 
 and for scaling the bit density of ferroelectric nonvolatile memories (NMV
 ). This talk will present on the synthesis of highly Sc alloyed AlScN mate
 rials of the thickness (5 nm to 1000 nm)\, stress\, and crystallinity requ
 ired for applications in NVM and microelectromechanical systems (MEMS). Th
 e material properties and device performance achieved will be reported and
  placed in the context of device specific figures-of-merit. Exemplar AlScN
  based memory\, RF\, and magnetoelectric sensor devices will be presented 
 and discussed in the context of alternative technologies.\n\nSpeaker(s): P
 rof. Troy Olsson\, \n\nAgenda: \n11:45 AM – 12 PM Event check-in\n\n12 
 – 12:05 PM Announcements\n\n12:05 – 12:50 PM Invited Talk\n\n12:50 –
  1 PM Questions &amp; Answers\n\nRoom: Conference Center (ECC1)\, Bldg: Buildi
 ng E\, 2900 Semiconductor Dr\, Texas Instruments\, Santa Clara\, Californi
 a\, United States\, 95051
LOCATION:Room: Conference Center (ECC1)\, Bldg: Building E\, 2900 Semicondu
 ctor Dr\, Texas Instruments\, Santa Clara\, California\, United States\, 9
 5051
ORGANIZER:jeronimo.segovia@ieee.org
SEQUENCE:3
SUMMARY:Aluminum Scandium Nitride Thin Films and Microdevices for Next Gene
 ration Nonvolatile Memory\, Radio Frequency Filters\, and Magnetoelectric 
 Sensors
URL;VALUE=URI:https://events.vtools.ieee.org/m/328867
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;strong&gt;Abstract:&lt;/strong&gt;&lt;/p&gt;\n&lt;p&gt;Aluminu
 m Nitride (AlN) is a well-established thin film piezoelectric material. Al
 N bulk acoustic wave (BAW) radio frequency (RF) filters were one of the ke
 y innovations that enabled the 3G and 4G smart phone revolution.&amp;nbsp\; Re
 cently\, the substitutional doping of scandium (Sc) for aluminum (Al) to f
 orm aluminum scandium nitride (AlScN) has been studied to significantly en
 hance the piezoelectric properties and to introduce ferroelectric properti
 es into AlN based material systems. The properties achieved have profound 
 implications for the performance of future 5G and 6G RF filters\, piezoele
 ctric sensors\, piezoelectric energy harvesters\, and for scaling the bit 
 density of ferroelectric nonvolatile memories (NMV). This talk will presen
 t on the synthesis of highly Sc alloyed AlScN materials of the thickness (
 5 nm to 1000 nm)\, stress\, and crystallinity required for applications in
  NVM and microelectromechanical systems (MEMS). The material properties an
 d device performance achieved will be reported and placed in the context o
 f device specific figures-of-merit. Exemplar AlScN based memory\, RF\, and
  magnetoelectric sensor devices will be presented and discussed in the con
 text of alternative technologies.&amp;nbsp\;&amp;nbsp\;&amp;nbsp\; &amp;nbsp\;&amp;nbsp\;&amp;nbsp
 \;&lt;/p&gt;&lt;br /&gt;&lt;br /&gt;Agenda: &lt;br /&gt;&lt;p data-key=&quot;32&quot;&gt;&lt;span data-key=&quot;33&quot;&gt;&lt;stro
 ng data-slate-leaf=&quot;true&quot;&gt;11:45 AM &amp;ndash\; 12 PM Event check-in&amp;nbsp\;&lt;/s
 trong&gt;&lt;/span&gt;&lt;/p&gt;\n&lt;p data-key=&quot;32&quot;&gt;&lt;span data-key=&quot;33&quot;&gt;&lt;strong data-slate
 -leaf=&quot;true&quot;&gt;12 &amp;ndash\; 12:05 PM Announcements&amp;nbsp\;&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;
 \n&lt;p data-key=&quot;34&quot;&gt;&lt;span data-key=&quot;35&quot;&gt;&lt;strong data-slate-leaf=&quot;true&quot;&gt;12:0
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 e&quot;&gt;12:50 &amp;ndash\; 1 PM Questions &amp;amp\; Answers&lt;/strong&gt;&lt;/span&gt;&lt;/p&gt;
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