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PRODID:IEEE vTools.Events//EN
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TZID:Asia/Hong_Kong
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DTSTART:19791021T023000
TZOFFSETFROM:+0900
TZOFFSETTO:+0800
TZNAME:HKT
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BEGIN:VEVENT
DTSTAMP:20221128T013339Z
UID:BEBBD579-3545-4A04-BF72-A2A6AB3179DC
DTSTART;TZID=Asia/Hong_Kong:20221125T160000
DTEND;TZID=Asia/Hong_Kong:20221125T170000
DESCRIPTION:Sub-Terahertz Passive Devices and Test Metrology\n\nProfessor J
 ames C. M. Hwang\n\nCornell University\, Ithaca\, New York 14853 USA\n\nDa
 te : 25 November 2022 (Friday)\n\nTime : 4:00pm – 5:00 pm (UTC+08:00) Ho
 ng Kong\n\nOnsite (with limited seats) is for City University of Hong Kong
  (CityU) staff and students only\n\nOnline (Zoom) is for the participants 
 outside CityU]\n\nVenue : Room 15-202\, 15/F\, Lau Ming Wai Academic Build
 ing\, CityU (Lift 1 or 2)\n\nRegistration : https://events.vtools.ieee.org
 /event/register/331973\n\nAs 6G wireless communications push the operation
  frequency above 100 GHz\, it is critical to have low-loss passive devices
  that can be accurately tested. To this end\, D-band (110 GHz to 170 GHz) 
 substrate-integrated waveguides (SIWs) are designed on a 100-µm-thick SiC
  substrate. The fabricated SIWs are characterized in a single sweep from 7
 0 kHz to 220 GHz with their input/output transitioned to grounded coplanar
  waveguides (GCPWs). From CPW-probed scattering parameters\, two-tier cali
 bration is used to extract the intrinsic SIW characteristics after de-embe
 dding the SIW-GCPW transitions. In general\, the record low loss measured 
 agrees with that obtained from finite-element full-wave electromagnetic si
 mulation. For example\, across the D band\, the average insertion loss is 
 approximately 0.2 dB/mm\, which is several times better than that of copla
 nar or microstrip transmission lines fabricated on the same substrate. A 3
 -pole filter exhibits a 1-dB insertion loss at 135 GHz with 20-dB selectiv
 ity and 11% bandwidth\, which is order-of-magnitude better than typical on
 -chip filters. These results underscore the potential of using SIWs to int
 erconnect transistors\, filters\, antennas\, and other circuit elements on
  the same substrate for monolithic integration.\n\nRoom: Room 15-202\, 15/
 F\, Bldg: Lau Ming Wai Academic Building\, City University of Hong Kong \,
  Hong Kong\, Hong Kong\, Hong Kong\, Virtual: https://events.vtools.ieee.o
 rg/m/331973
LOCATION:Room: Room 15-202\, 15/F\, Bldg: Lau Ming Wai Academic Building\, 
 City University of Hong Kong \, Hong Kong\, Hong Kong\, Hong Kong\, Virtua
 l: https://events.vtools.ieee.org/m/331973
ORGANIZER:alex.mh.wong@cityu.edu.hk
SEQUENCE:6
SUMMARY:Seminar: Sub-Terahertz Passive Devices and Test Metrology
URL;VALUE=URI:https://events.vtools.ieee.org/m/331973
X-ALT-DESC:Description: <br /><p><span style="font-size: 18pt\; color: #359
 8db\;"><strong>Sub-Terahertz Passive Devices and Test Metrology</strong></
 span></p>\n<p><strong>Professor </strong><strong>James C. M. Hwang</strong
 ></p>\n<p><strong>Cornell University\, Ithaca\, New York 14853 USA</strong
 ></p>\n<p><strong>Date &nbsp\; &nbsp\;: &nbsp\; &nbsp\;25 November 2022 (F
 riday)</strong></p>\n<p><strong>Time &nbsp\; &nbsp\;: &nbsp\; &nbsp\;4:00p
 m &ndash\; 5:00 pm (UTC+08:00) Hong Kong</strong></p>\n<p><strong>Onsite (
 with limited seats) is for City University of Hong Kong (CityU) staff and 
 students only</strong></p>\n<p><strong>Online (Zoom) is for the participan
 ts outside CityU]</strong></p>\n<p><strong>Venue &nbsp\; &nbsp\;: &nbsp\; 
 &nbsp\;Room 15-202\, 15/F\, Lau Ming Wai Academic Building\, CityU (Lift 1
  or 2)</strong></p>\n<p><strong>Registration &nbsp\; &nbsp\;: &nbsp\; <a h
 ref="https://events.vtools.ieee.org/event/register/331973">https://events.
 vtools.ieee.org/event/register/331973</a> </strong></p>\n<p>As 6G wireless
  communications push the operation frequency above 100 GHz\, it is critica
 l to have low-loss passive devices that can be accurately tested. To this 
 end\, D-band (110 GHz to 170 GHz) substrate-integrated waveguides (SIWs) a
 re designed on a 100-&micro\;m-thick SiC substrate. The fabricated SIWs ar
 e characterized in a single sweep from 70 kHz to 220 GHz with their input/
 output transitioned to grounded coplanar waveguides (GCPWs). From CPW-prob
 ed scattering parameters\, two-tier calibration is used to extract the int
 rinsic SIW characteristics after de-embedding the SIW-GCPW transitions. In
  general\, the record low loss measured agrees with that obtained from fin
 ite-element full-wave electromagnetic simulation. For example\, across the
  D band\, the average insertion loss is approximately 0.2 dB/mm\, which is
  several times better than that of coplanar or microstrip transmission lin
 es fabricated on the same substrate. A 3-pole filter exhibits a 1-dB inser
 tion loss at 135 GHz with 20-dB selectivity and 11% bandwidth\, which is o
 rder-of-magnitude better than typical on-chip filters. These results under
 score the potential of using SIWs to interconnect transistors\, filters\, 
 antennas\, and other circuit elements on the same substrate for monolithic
  integration.&nbsp\;</p>
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