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UID:A5C997AC-EB01-48DA-B9B7-A0EDF93D1292
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DESCRIPTION:Gallium Nitride (GaN) power FETs have been in production for ov
 er 10 years\, and advances continue to\nbe made. Covered in this talk is a
  review of GaN FETs\, and recent advances in the GaN devices and also in\n
 the understanding and application of GaN devices. Included are reliability
  advances\, packaging\, board\nlayout advances\, and thermal design. Also 
 covered is an introduction to the structure of GaN ICs. Finally\,\na look 
 at the near future of GaN devices and their application are explored.\n\nS
 peaker(s): Brian Miller\, \n\nBldg: Hauppauge Radisson\, 110 Motor Parkway
 \, Hauppauge\, New York\, United States
LOCATION:Bldg: Hauppauge Radisson\, 110 Motor Parkway\, Hauppauge\, New Yor
 k\, United States
ORGANIZER:cas@ieee.li
SEQUENCE:0
SUMMARY:Advances in GaN Devices
URL;VALUE=URI:https://events.vtools.ieee.org/m/333412
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span id=&quot;page1R_mcid4&quot; class=&quot;markedConte
 nt&quot;&gt;&lt;/span&gt;&lt;span id=&quot;page1R_mcid5&quot; class=&quot;markedContent&quot;&gt;&lt;span dir=&quot;ltr&quot; s
 tyle=&quot;left: 120px\; top: 708.55px\; font-size: 18.3px\; font-family: sans-
 serif\; transform: scaleX(0.922838)\;&quot; role=&quot;presentation&quot;&gt;&lt;span id=&quot;page1
 24R_mcid13&quot; class=&quot;markedContent&quot;&gt;&lt;span class=&quot;&quot; dir=&quot;ltr&quot; style=&quot;left: 11
 9.963px\; top: 1030.22px\; font-size: 18.3px\; font-family: sans-serif\; t
 ransform: scaleX(0.929872)\;&quot; role=&quot;presentation&quot;&gt;Gallium Nitride (GaN) po
 wer FETs have been in production for over 10 years\, and &lt;span class=&quot;high
 light appended&quot;&gt;advanc&lt;/span&gt;es continue to&lt;/span&gt;&lt;br role=&quot;presentation&quot; 
 /&gt;&lt;span class=&quot;&quot; dir=&quot;ltr&quot; style=&quot;left: 119.963px\; top: 1056.03px\; font-
 size: 18.3px\; font-family: sans-serif\; transform: scaleX(0.894663)\;&quot; ro
 le=&quot;presentation&quot;&gt;be made. Covered in this talk is a review of GaN FETs\, 
 and recent &lt;span class=&quot;highlight appended&quot;&gt;advanc&lt;/span&gt;es in the GaN dev
 ices and also in&lt;/span&gt;&lt;br role=&quot;presentation&quot; /&gt;&lt;span class=&quot;&quot; dir=&quot;ltr&quot; 
 style=&quot;left: 119.963px\; top: 1081.72px\; font-size: 18.3px\; font-family:
  sans-serif\; transform: scaleX(0.943843)\;&quot; role=&quot;presentation&quot;&gt;the under
 standing and application of GaN devices. Included are reliability &lt;span cl
 ass=&quot;highlight appended&quot;&gt;advanc&lt;/span&gt;es\, packaging\, board&lt;/span&gt;&lt;br rol
 e=&quot;presentation&quot; /&gt;&lt;span class=&quot;&quot; dir=&quot;ltr&quot; style=&quot;left: 119.963px\; top: 
 1107.41px\; font-size: 18.3px\; font-family: sans-serif\; transform: scale
 X(0.920461)\;&quot; role=&quot;presentation&quot;&gt;layout &lt;span class=&quot;highlight appended&quot;
 &gt;advanc&lt;/span&gt;es\, and thermal design. Also covered is an introduction to 
 the structure of GaN ICs. Finally\,&lt;/span&gt;&lt;br role=&quot;presentation&quot; /&gt;&lt;span 
 dir=&quot;ltr&quot; style=&quot;left: 119.945px\; top: 1133.22px\; font-size: 18.3px\; fo
 nt-family: sans-serif\; transform: scaleX(0.923438)\;&quot; role=&quot;presentation&quot;
 &gt;a look at the near future of GaN devices and their application are explor
 ed.&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/p&gt;
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