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PRODID:IEEE vTools.Events//EN
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DTSTART:20220313T030000
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DTSTART:20221106T010000
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BEGIN:VEVENT
DTSTAMP:20221120T185408Z
UID:CE32B8DB-D532-471A-AB5D-2F0A3B5F750E
DTSTART;TZID=America/New_York:20221105T170000
DTEND;TZID=America/New_York:20221105T180000
DESCRIPTION:SiC MOSFET modules are now commercially available with blocking
  voltage ratings ranging from 600 V to\n3.3 kV and current ratings from 25
  A to 1200 A. The presentation will outline the application requirements\n
 and expected performance gains when replacing silicon IGBTs with SiC MOSFE
 Ts.\n\nSpeaker(s): Eric Motto\, \n\nBldg: Hauppauge Radisson\, 110 Motor P
 arkway\, Hauppauge\, New York\, United States
LOCATION:Bldg: Hauppauge Radisson\, 110 Motor Parkway\, Hauppauge\, New Yor
 k\, United States
ORGANIZER:emc@ieee.li
SEQUENCE:0
SUMMARY:Replacing Silicon IGBT Modules with SiC MOSFET Modules
URL;VALUE=URI:https://events.vtools.ieee.org/m/333424
X-ALT-DESC:Description: &lt;br /&gt;&lt;p&gt;&lt;span id=&quot;page5R_mcid2&quot; class=&quot;markedConte
 nt&quot;&gt;&lt;span dir=&quot;ltr&quot; style=&quot;left: 120px\; top: 189.717px\; font-size: 18.3p
 x\; font-family: sans-serif\; transform: scaleX(0.907209)\;&quot; role=&quot;present
 ation&quot;&gt;SiC MOSFET modules are now commercially available with blocking vol
 tage ratings ranging from 600 V to&lt;/span&gt;&lt;br role=&quot;presentation&quot; /&gt;&lt;span d
 ir=&quot;ltr&quot; style=&quot;left: 120px\; top: 215.41px\; font-size: 18.3px\; font-fam
 ily: sans-serif\; transform: scaleX(0.917777)\;&quot; role=&quot;presentation&quot;&gt;3.3 k
 V and current ratings from 25 A to 1200 A. The presentation will outline t
 he application requirements&lt;/span&gt;&lt;br role=&quot;presentation&quot; /&gt;&lt;span class=&quot;&quot;
  dir=&quot;ltr&quot; style=&quot;left: 120.018px\; top: 241.213px\; font-size: 18.3px\; f
 ont-family: sans-serif\; transform: scaleX(0.89639)\;&quot; role=&quot;presentation&quot;
 &gt;and expected performance gains when &lt;span class=&quot;highlight appended&quot;&gt;repl
 ac&lt;/span&gt;ing silicon IGBTs with SiC MOSFETs.&lt;/span&gt;&lt;/span&gt;&lt;/p&gt;
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