BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20221216T024035Z UID:8FA7C4FB-E61C-46F2-977C-D30D44EC704A DTSTART;TZID=America/Los_Angeles:20221215T170000 DTEND;TZID=America/Los_Angeles:20221215T183000 DESCRIPTION:The bottleneck of an electronic\, photonic\, MEMS or MOEMS (opt ical MEMS) system's reliability is\, as is known\, the mechanical ("physic al") performance of the system's materials and structural elements and not its functional (electrical or optical) performance. It is well known also that it is the device packaging that is the most critical undertaking\, w hen making a viable\, properly protected and effectively-interconnected el ectrical or optical device and package into a reliable product. Accelerate d life testing (ALT) conducted at different stages of an IC package design and manufacturing is the major means for achieving that. Burn-in-testing (BIT)\, the chronologically final ALT\, aimed at eliminating the infant mo rtality portion (IMP) of the bathtub curve (BTC) prior to shipping to the customer(s) the "healthy" products\, i.e. those that survived BIT\, is par ticularly important: BIT is an accepted practice for detecting and elimina ting possible early failures in the just fabricated products and is conduc ted at the manufacturing stage of the product fabrication. Originally BIT used continuously powering the manufactured products by applying elevated temperature to accelerate their aging\, but today various stressors\, othe r-than-elevated-temperature\, or a physically meaningful combination of se veral of them\, are employed in this capacity. BIT\, as far as "freaks" ar e concerned\, is and always was\, of course\, a failure-oriented-accelerat ed-testing (FOAT) type of testing. Our analysis sheds light on the role an d significance of several important factors that affect BIT's testing time and stress level: the random failure rate (RFR) of mass-produced componen ts that the product of interest is comprised of\; the way to assess\, from the highly focused and highly cost effective FOAT\, the activation energy of the “freak” population\; the role of the applied stressor(s)\; and \, most importantly\, - the probabilities of the “freak” population fa ilures depending on the duration and level of the BIT's effort. These fact ors should be considered when there is an intent to quantify and\, eventua lly\, to optimize the BIT’s procedure. Although no straightforward and c omplete ways of how to optimize BIT have been suggested\, our analyses pro vide nonetheless useful and physically meaningful information on the signi ficance of some important factors that affect this type of FOAT. But there is also another\, so far less well-known and not always conducted today\, FOAT that has been recently suggested in connection with the novel probab ilistic design for reliability (PDfR) concept and is supposed to be conduc ted at the design stage as a highly focused and highly cost effective unde rtaking. FOAT is the experimental foundation of the PDfR concept and\, unl ike BIT\, which is always a must\, should be conducted\, when developing a new technology or considering a new design\, and when there is an intent to better understand the physics of failure and\, for many demanding appli cations\, such as\, e.g.\, aerospace\, military\, or long-haul communicati ons\, to quantify the lifetime and the corresponding\, in effect\, never-z ero probability of failure of the product in the field. Such a design-stag e FOAT could be viewed as a quantified and reliability-physics-oriented fo rty years old highly-accelerated-life-testing(HALT)\, and should be partic ularly recommended for new technologies and new designs\, whose reliabilit y is yet unclear and when neither a suitable HALT\, nor a more or less est ablished "best practices" exist. When FOAT at the design stage and BIT at the manufacturing stage are conducted\, a suitable and physically meaningf ul constitutive equation\, such as\, e.g.\, the kinetic and physically mea ningful multi-parametric Boltzmann-Arrhenius-Zhurkov (BAZ) model\, should be employed to predict\, from the test data\, the probability of failure a nd the corresponding useful lifetime of the product. Both types of FOAT an d the use of the BAZ equation are addressed\, and their roles and interact ion with other types of accelerated tests are indicated and discussed. It is noteworthy that the BAZ model can be used also to predict the lifetime not only of IC packages\, but the lifetime of electronic devices as well.\ n\nOur analyses use\, as a rule\, analytical ("mathematical") predictive m odeling. In the author's opinion and experience\, such modeling should alw ays complement computer simulations: these two major modeling tools are ba sed on different assumptions and use different computation techniques\, an d if the calculated data obtained using these tools are in agreement\, the n there is a good reason to believe that the obtained data are accurate an d trustworthy. Future work should be focused on the experimental verificat ion of the obtained findings and recommendations.\n\nSpeaker(s): Dr. Ephra im Suhir\, \n\nVirtual: https://events.vtools.ieee.org/m/335803 LOCATION:Virtual: https://events.vtools.ieee.org/m/335803 ORGANIZER:pthadesar@ieee.org SEQUENCE:3 SUMMARY:IEEE EPS Webinar: Failure-Oriented-Accelerated Tests and Their Role s in Making a Viable IC Package into a Reliable Product URL;VALUE=URI:https://events.vtools.ieee.org/m/335803 X-ALT-DESC:Description: <br /><p style="font-weight: 400\;">The bottleneck of an electronic\, photonic\, MEMS or MOEMS (optical MEMS) system's reliab ility is\, as is known\, the mechanical ("physical") performance of &nbsp\ ;the system's materials and structural elements and not its functional (el ectrical or optical) performance. It is well known also that it is the dev ice packaging that is the most critical undertaking\, when making a viable \, properly protected and effectively-interconnected electrical or optical device and package into a reliable product. <u>Accelerated life testing ( ALT)</u> conducted at different stages of an IC package design and manufac turing is the major means for achieving that. <u>Burn-in-testing (BIT)</u> \, the chronologically final ALT\, aimed at eliminating the infant mortali ty portion (IMP) of the bathtub curve (BTC) prior to shipping to the custo mer(s) the "healthy" products\, i.e. those that survived BIT\, is particul arly important: BIT is an accepted practice for detecting and eliminating possible early failures in the just fabricated products and is conducted a t the manufacturing stage of the product fabrication. Originally BIT used continuously powering the manufactured products by applying&nbsp\; elevate d temperature to accelerate their aging\, but today various stressors\, ot her-than-elevated-temperature\, or a physically meaningful combination of several of them\, are employed in this capacity. BIT\, as far as "freaks" &nbsp\;are concerned\, is and always was\, of course\, a <u>failure-orient ed-accelerated-testing</u> (FOAT) type of testing. &nbsp\;Our analysis she ds light on the role and significance of several important factors that af fect BIT's testing time and stress level: the random failure rate (RFR) of mass-produced components that the product of interest is comprised of\; t he way to assess\, from the highly focused and highly cost effective FOAT\ , the activation energy of the &ldquo\;freak&rdquo\; population\; the role of the applied stressor(s)\; and\, most importantly\, - the probabilities of the &ldquo\;freak&rdquo\; population failures depending on the duratio n and level of the BIT's effort. These factors should be considered when t here is an intent to quantify and\, eventually\, to optimize the BIT&rsquo \;s procedure. Although no straightforward and complete ways of how to opt imize BIT have been suggested\, our analyses provide nonetheless useful an d physically meaningful information on the significance of some important factors that affect this type of FOAT. But there is also another\, so far less well-known and not always conducted today\, FOAT that has been recent ly suggested in connection with the novel <u>probabilistic design for reli ability (PDfR) concept</u> and is supposed to be conducted at the design s tage as a highly focused and highly cost effective undertaking. FOAT is th e experimental foundation of the PDfR concept and\, unlike BIT\, which is always a must\, should be conducted\, when developing a new technology or considering a new design\, and when there is an intent to better understan d the physics of failure and\, for many demanding applications\, such as\, e.g.\, aerospace\, military\, or long-haul communications\, to quantify t he lifetime and the corresponding\, in effect\,&nbsp\; never-zero probabil ity of failure of the product in the field.&nbsp\; Such a <u>design-stage FOAT</u> could be viewed as a quantified and reliability-physics-oriented forty years old <u>highly-accelerated-life-testing</u>(HALT)\, and should be particularly recommended for new technologies and new designs\, whose r eliability is yet unclear and when neither a suitable HALT\, nor &nbsp\;a more or less established "best practices" exist. When FOAT at the design s tage and BIT at the manufacturing stage are conducted\, a suitable and phy sically meaningful constitutive equation\, such as\, e.g.\, the kinetic an d physically meaningful <u>multi-parametric Boltzmann-Arrhenius-Zhurkov (B AZ) model</u>\, should be employed to predict\, from the test data\, the p robability of failure and the corresponding useful lifetime of the product . &nbsp\;Both types of FOAT and the use of the BAZ equation are addressed\ , and their roles and interaction with other types of accelerated tests ar e indicated and discussed. It is noteworthy that the BAZ model can be used also to predict the lifetime not only of IC packages\, but the lifetime o f electronic devices as well.</p>\n<p style="font-weight: 400\;">Our analy ses use\, as a rule\, <u>analytical ("mathematical") predictive modeling</ u>. In the author's opinion and experience\, such modeling should always c omplement computer simulations: these two major modeling tools are based o n different assumptions and use different computation techniques\, and if the calculated data obtained using these tools are in agreement\, then the re is a good reason to believe that the obtained data are accurate and tru stworthy. <u>Future work</u> should be focused on the experimental verific ation of the obtained findings and recommendations.</p> END:VEVENT END:VCALENDAR