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DTSTAMP:20230127T202744Z
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DTSTART;TZID=America/Los_Angeles:20230126T113000
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DESCRIPTION:Performance requirements for today’s semiconductor and optoel
 ectronic devices are leading to shrinking geometries\, more complex 3-dime
 nsional structures\, and new materials. High temperatures\, hot spots and 
 temperature spikes can have a major impact on reliability. It is essential
  that one have a thorough understanding of static and dynamic thermal perf
 ormance under operating and static conditions. This has traditionally been
  complex\, time consuming\, and often lacked the resolution required to de
 tect thermal anomalies that could lead to early device failures. Fortunate
 ly\, advances in thermal imaging techniques that combine the benefits of t
 hermoreflectance-based analysis with illumination wavelengths from near-ul
 traviolet to near infrared coupled with infrared thermography can support 
 thermal\, spatial\, and transient resolution consistent with today’s adv
 anced complex device structures and shrinking geometries. In addition\, eq
 uipment has advanced to considerably reduce the time and cost to get accur
 ate results. Many examples will be shared to fully illustrate the device t
 hermal behaviors that can be detected with these advanced thermal analysis
  techniques.\n\nSpeaker(s): Mo Shakouri\, \n\nSEMI World Hdqtrs\, 673 S Mi
 lpitas Blvd\, Milpitas\, California\, United States\, 95035\, Virtual: htt
 ps://events.vtools.ieee.org/m/336546
LOCATION:SEMI World Hdqtrs\, 673 S Milpitas Blvd\, Milpitas\, California\, 
 United States\, 95035\, Virtual: https://events.vtools.ieee.org/m/336546
ORGANIZER:p.wesling@ieee.org
SEQUENCE:3
SUMMARY:Submicron Nanosecond Thermoreflectance Imaging for Thermal and Fail
 ure Analysis
URL;VALUE=URI:https://events.vtools.ieee.org/m/336546
X-ALT-DESC:Description: <br /><p><span style="font-size: 12pt\;">Performanc
 e requirements for today&rsquo\;s semiconductor and optoelectronic devices
  are leading to shrinking geometries\, more complex 3-dimensional structur
 es\, and new materials. High temperatures\, hot spots and temperature spik
 es can have a major impact on reliability. It is essential that one have a
  thorough understanding of static and dynamic thermal performance under op
 erating and static conditions. This has traditionally been complex\, time 
 consuming\, and often lacked the resolution required to detect thermal ano
 malies that could lead to early device failures. Fortunately\, advances in
  thermal imaging techniques that combine the benefits of thermoreflectance
 -based analysis with illumination wavelengths from near-ultraviolet to nea
 r infrared coupled with infrared thermography can support thermal\, spatia
 l\, and transient resolution consistent with today&rsquo\;s advanced compl
 ex device structures and shrinking geometries. In addition\, equipment has
  advanced to considerably reduce the time and cost to get accurate results
 . Many examples will be shared to fully illustrate the device thermal beha
 viors that can be detected with these advanced thermal analysis techniques
 .</span></p>
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