BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:US/Pacific BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230415T021103Z UID:42F9CC37-4C6B-4467-9580-1C42610286D2 DTSTART;TZID=US/Pacific:20230126T183000 DTEND;TZID=US/Pacific:20230126T200000 DESCRIPTION:Wide bandgap semiconductor devices based on GaN and SiC offer m yriads of advantages over traditional Si-based devices for applications in power electronics. These advantages include\, among others\, faster switc hing capabilities\, allowing for reduced filtering components within conve rter topologies\, thus leading to improved power density. Despite their ma ny advantages\, several challenges related to technological readiness leve l have hindered the widespread adoption of these devices. At the device-ph ysics level\, for example\, the theoretical high voltage capability of GaN has yet to be commercially realized. At the device-circuits level\, the f ast-switching capability of SiC\, though generally a beneficial attribute\ , has led to undesirable injected harmonic content into power electronic c onverters\, leading to detrimental circuit-behavior. For these reasons\, a dvanced modeling\, and characterization methods for both GaN and SiC are n eeded\, so that these devices can realize their full performance entitleme nt. This talk will present a broad array of modeling and characterization methodologies for GaN and SiC semiconductors. Device physics simulations u sing finite element modeling techniques will be presented\, demonstrating the high voltage capability of vertical GaN diodes. It will be shown how t hese types of models can lead to the design and fabrication of future high voltage and reliable vertical GaN devices. Analytical physics-based model s of GaN diodes\, based on first principles\, will also be presented. For these types of models\, tradeoffs between model-fidelity and convergence-t ime in circuit-simulations will be discussed. Behavioral models of SiC MOS FETs\, based on mathematical curve-fitted equations\, will then be present ed. These models will demonstrate the need to capture the frequency-depend ence of the device’s parasitic per-terminal junction capacitances\, as w ell as that of the parasitic package inductances\, in order to construct a comprehensive empirically validated high-fidelity circuit-simulation. New strategies that can enable the development of hybrid-physics and -behavio ral models will be presented\, in a manner that offers utility to both dev ice fabrication engineers\, as well as application-circuit designers. For the various types of models presented\, the importance of the interplay an d refinement between simulation and empirical validation will be emphasize d. This talk will conclude with characterization techniques and opportunit ies for wide bandgap semiconductors in space. The work presented in this t alk lends itself well to developing strategies for multilevel integrated m odeling infrastructures of next generation GaN and SiC devices\, and to ai d in the design\, fabrication\, and implementation of future high-voltage and reliable wide and ultrawide bandgap semiconductors.\n\nSpeaker(s): Pro f. Raghav Khanna\, \n\nRoom: 4th Floor\, Room 4021\, Bldg: Sobrato Campus for Discovery and Innovation (SCDI)\, 500 El Camino Real\, Santa Clara Uni versity’s Frugal Innovation Hub\, Santa Clara\, California\, United Stat es\, 95053 LOCATION:Room: 4th Floor\, Room 4021\, Bldg: Sobrato Campus for Discovery a nd Innovation (SCDI)\, 500 El Camino Real\, Santa Clara University’s Fru gal Innovation Hub\, Santa Clara\, California\, United States\, 95053 ORGANIZER:kishan.g.joshi@gmail.com SEQUENCE:11 SUMMARY:Wide Bandgap Semiconductors: Opportunities and Challenges for Impro ved Modeling and Characterization Methods in Power Electronic Applications URL;VALUE=URI:https://events.vtools.ieee.org/m/340643 X-ALT-DESC:Description: <br /><p data-key="94"><span data-key="95">Wide ban dgap semiconductor devices based on GaN and SiC offer myriads of advantage s over traditional Si-based devices for applications in power electronics. These advantages include\, among others\, faster switching capabilities\, allowing for reduced filtering components within converter topologies\, t hus leading to improved power density. Despite their many advantages\, sev eral challenges related to technological readiness level have hindered the widespread adoption of these devices. At the device-physics level\, for e xample\, the theoretical high voltage capability of GaN has yet to be comm ercially realized. At the device-circuits level\, the fast-switching capab ility of SiC\, though generally a beneficial attribute\, has led to undesi rable injected harmonic content into power electronic converters\, leading to detrimental circuit-behavior. For these reasons\, advanced modeling\, and characterization methods for both GaN and SiC are needed\, so that the se devices can realize their full performance entitlement. This talk will present a broad array of modeling and characterization methodologies for G aN and SiC semiconductors. Device physics simulations using finite element modeling techniques will be presented\, demonstrating the high voltage ca pability of vertical GaN diodes. It will be shown how these types of model s can lead to the design and fabrication of future high voltage and reliab le vertical GaN devices. Analytical physics-based models of GaN diodes\, b ased on first principles\, will also be presented. For these types of mode ls\, tradeoffs between model-fidelity and convergence-time in circuit-simu lations will be discussed. Behavioral models of SiC MOSFETs\, based on mat hematical curve-fitted equations\, will then be presented. These models wi ll demonstrate the need to capture the frequency-dependence of the device& rsquo\;s parasitic per-terminal junction capacitances\, as well as that of the parasitic package inductances\, in order to construct a comprehensive empirically validated high-fidelity circuit-simulation. New strategies th at can enable the development of hybrid-physics and -behavioral models wil l be presented\, in a manner that offers utility to both device fabricatio n engineers\, as well as application-circuit designers. For the various ty pes of models presented\, the importance of the interplay and refinement b etween simulation and empirical validation will be emphasized. This talk w ill conclude with characterization techniques and opportunities for wide b andgap semiconductors in space. The work presented in this talk lends itse lf well to developing strategies for multilevel integrated modeling infras tructures of next generation GaN and SiC devices\, and to aid in the desig n\, fabrication\, and implementation of future high-voltage and reliable w ide and ultrawide bandgap semiconductors.</span></p> END:VEVENT END:VCALENDAR