BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Los_Angeles BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0800 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:PDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0700 TZOFFSETTO:-0800 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:PST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230128T001718Z UID:372BFEB1-DCB9-418C-9EB8-BD3B075FD338 DTSTART;TZID=America/Los_Angeles:20230127T120000 DTEND;TZID=America/Los_Angeles:20230127T130000 DESCRIPTION:The zoom meeting details for this event will be sent to registr ants one day before the event on the email provided at registration.\n\nAb stract:\n\nOver the years\, most of the manufactured electronic devices st arted to have at least one dimension in the nanometer scale. Concurrently\ , the non-equilibrium Green’s function (NEGF) framework has been broadly democratized to investigate quantum transport effects inside those device s. The latter framework has also proven its importance to correctly captur e the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling fo r various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mec hanisms present in 2D FETs\, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will al so be presented. The second part will show the application of the ab-initi o modeling framework to simulate Majorana transport\, paving the way for t opological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit manipulations and measurements in 2D materials will als o be covered.\n\nSpeaker(s): Dr. Youseung Lee\, \n\nAgenda: \nOver the yea rs\, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently\, the non-equilibrium G reen’s function (NEGF) framework has been broadly democratized to invest igate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physi cs for the nano-scale devices. This talk will then discuss the latest deve lopment of atomistic quantum transport modelling for various emerging 2D m aterials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scattering mechanisms present in 2D F ETs\, combining the linearized Boltzmann Transport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections will also be presented. The se cond part will show the application of the ab-initio modeling framework to simulate Majorana transport\, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of van der Waals charge qubit mani pulations and measurements in 2D materials will also be covered.\n\nVirtua l: https://events.vtools.ieee.org/m/342765 LOCATION:Virtual: https://events.vtools.ieee.org/m/342765 ORGANIZER:imran.bashir@ieee.org SEQUENCE:1 SUMMARY:IEEE-EDS Seminar - Atomistic Quantum Transport Modelling for Emerge nt 2D Material-based Device by Dr. Youseung Lee URL;VALUE=URI:https://events.vtools.ieee.org/m/342765 X-ALT-DESC:Description: <br /><h3>The zoom meeting details for this event w ill be sent to registrants one day before the event on the email provided at registration.</h3>\n<h3>Abstract:</h3>\n<p>Over the years\, most of the manufactured electronic devices started to have at least one dimension in the nanometer scale. Concurrently\, the non-equilibrium Green&rsquo\;s fu nction (NEGF) framework has been broadly democratized to investigate quant um transport effects inside those devices. The latter framework has also p roven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modelling for various emerging 2D materials-ba sed devices. The first part of the talk will show an ab-initio approach th at correctly captures the scattering mechanisms present in 2D FETs\, combi ning the linearized Boltzmann Transport Equation (LBTE) and the NEGF forma lism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via ma ny body defect-level corrections will also be presented. The second part w ill show the application of the ab-initio modeling framework to simulate M ajorana transport\, paving the way for topological qubits based on 2D nano ribbons. Atomistic modelling of van der Waals charge qubit manipulations a nd measurements in 2D materials will also be covered.</p><br /><br />Agend a: <br /><p>Over the years\, most of the manufactured electronic devices s tarted to have at least one dimension in the nanometer scale. Concurrently \, the non-equilibrium Green&rsquo\;s function (NEGF) framework has been b roadly democratized to investigate quantum transport effects inside those devices. The latter framework has also proven its importance to correctly capture the underlining physics for the nano-scale devices. This talk will then discuss the latest development of atomistic quantum transport modell ing for various emerging 2D materials-based devices. The first part of the talk will show an ab-initio approach that correctly captures the scatteri ng mechanisms present in 2D FETs\, combining the linearized Boltzmann Tran sport Equation (LBTE) and the NEGF formalism. Atomistic defect-variability study for 2D monolayer MoS2 FETs via many body defect-level corrections w ill also be presented. The second part will show the application of the ab -initio modeling framework to simulate Majorana transport\, paving the way for topological qubits based on 2D nanoribbons. Atomistic modelling of va n der Waals charge qubit manipulations and measurements in 2D materials wi ll also be covered.</p> END:VEVENT END:VCALENDAR