BEGIN:VCALENDAR VERSION:2.0 PRODID:IEEE vTools.Events//EN CALSCALE:GREGORIAN BEGIN:VTIMEZONE TZID:America/Denver BEGIN:DAYLIGHT DTSTART:20230312T030000 TZOFFSETFROM:-0700 TZOFFSETTO:-0600 RRULE:FREQ=YEARLY;BYDAY=2SU;BYMONTH=3 TZNAME:MDT END:DAYLIGHT BEGIN:STANDARD DTSTART:20221106T010000 TZOFFSETFROM:-0600 TZOFFSETTO:-0700 RRULE:FREQ=YEARLY;BYDAY=1SU;BYMONTH=11 TZNAME:MST END:STANDARD END:VTIMEZONE BEGIN:VEVENT DTSTAMP:20230216T041207Z UID:408CC906-B87F-4631-818E-C10C1ADFA6BD DTSTART;TZID=America/Denver:20221209T110000 DTEND;TZID=America/Denver:20221209T121500 DESCRIPTION:Resistive switching and spintronics emerged as leading approach es for the development of scalable and energy-efficient memories and infor mation processing devices. In resistive switching systems\, an electrical stimulus\, voltage or current\, programs the material’s resistivity. In spintronics\, electrical signals are used to manipulate and probe the mate rial’s magnetic configuration. Combing resistive switching and spintroni cs functionalities in a single device is an exciting opportunity to bring together the advantages of charge- and spin-based electronics\, enriching the design space for practical applications\, and to further the basic und erstanding of interactions between electrical and magnetic properties in m atter. In this talk\, I will discuss the interplay between resistive switc hing and magnetism in a model system (La\,Sr)MnO3 (LSMO). Applying voltage to LSMO triggers coupled metal-insulator and ferromagnetic transitions pr oducing volatile low-to-high resistance switching. The switching occurs in a characteristic spatial pattern\, the formation of a paramagnetic insula ting barrier perpendicular to the current flow (in contrast to the convent ional filamentary percolation parallel to the current). The voltage- induc ed barrier formation drives the development of a uniaxial magnetic anisotr opy that overpowers the intrinsic material’s anisotropy. Furthermore\, i nducing resistive switching leads to strong magneto- transport anomalies i ncluding large magnitude increase and sign flip of anisotropic and colossa l magnetoresistances. Because resistive switching is a common phenomenon o bserved in many materials\, the findings of this work open an avenue towar d utilizing resistive switching as an efficient tool for electrical manipu lation of magnetism in a variety of ferro-\, ferri- and antiferromagnetic systems.\n\nCo-sponsored by: UCCS\n\nSpeaker(s): Pavel Salev\, \n\nRoom: A 204\, Bldg: Osborne Center for Science and Engineering\, 1420 Austin Bluff s Pkwy\, Colorado Springs\, Colorado\, United States\, 80918\, Virtual: ht tps://events.vtools.ieee.org/m/348980 LOCATION:Room: A204\, Bldg: Osborne Center for Science and Engineering\, 14 20 Austin Bluffs Pkwy\, Colorado Springs\, Colorado\, United States\, 8091 8\, Virtual: https://events.vtools.ieee.org/m/348980 ORGANIZER:dbozhko@uccs.edu SEQUENCE:0 SUMMARY:Voltage-controlled magnetism enabled by resistive switching URL;VALUE=URI:https://events.vtools.ieee.org/m/348980 X-ALT-DESC:Description: <br /><p>Resistive switching and spintronics emerge d as leading approaches for the development of scalable and energy-efficie nt memories and information processing devices. In resistive switching sys tems\, an electrical stimulus\, voltage or current\, programs the material &rsquo\;s resistivity. In spintronics\, electrical signals are used to man ipulate and probe the material&rsquo\;s magnetic configuration. Combing re sistive switching and spintronics functionalities in a single device is an exciting opportunity to bring together the advantages of charge- and spin -based electronics\, enriching the design space for practical applications \, and to further the basic understanding of interactions between electric al and magnetic properties in matter. In this talk\, I will discuss the in terplay between resistive switching and magnetism in a model system (La\,S r)MnO3 (LSMO). Applying voltage to LSMO triggers coupled metal-insulator a nd ferromagnetic transitions producing volatile low-to-high resistance swi tching. The switching occurs in a characteristic spatial pattern\, the for mation of a paramagnetic insulating barrier perpendicular to the current f low (in contrast to the conventional filamentary percolation parallel to t he current). The voltage- induced barrier formation drives the development of a uniaxial magnetic anisotropy that overpowers the intrinsic material& rsquo\;s anisotropy. Furthermore\, inducing resistive switching leads to s trong magneto- transport anomalies including large magnitude increase and sign flip of anisotropic and colossal magnetoresistances. Because resistiv e switching is a common phenomenon observed in many materials\, the findin gs of this work open an avenue toward utilizing resistive switching as an efficient tool for electrical manipulation of magnetism in a variety of fe rro-\, ferri- and antiferromagnetic systems.</p> END:VEVENT END:VCALENDAR