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DTSTAMP:20230505T144551Z
UID:3E4EDA8F-82DB-425E-AC45-9C5DF32FA911
DTSTART;TZID=America/New_York:20230427T174500
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DESCRIPTION:Abstract:\n\nSilicon devices are dominating power electronics d
 ue to their excellent starting material quality\, streamlined fabrication\
 , low-cost volume production\, proven reliability and ruggedness\, and des
 ign/circuit legacy. Although Si power devices continue to make progress\, 
 they are approaching their operational limits primarily due to their relat
 ively low bandgap and critical electric field that result in high conducti
 on and switching losses\, and poor high temperature performance.\n\nIn thi
 s presentation\, the co-existence of Si\, SiC\, and GaN will be discussed\
 , and their respective competitive advantages highlighted. The favorable m
 aterial properties of Silicon Carbide\, which allow for highly efficient p
 ower devices with reduced form-factor and cooling requirements\, will be o
 utlined. High impact application opportunities\, where SiC devices are dis
 placing their incumbent Si counterparts\, will be reported. Fab models and
  the vibrant SiC manufacturing infrastructure (that mirrors that of Si) wi
 ll be presented. Barriers to SiC mass commercialization will be identified
  and analyzed. These include the higher than silicon device cost\, reliabi
 lity and ruggedness concerns\, defects that degrade device performance\, a
 nd the need for a trained workforce to skillfully insert SiC into power el
 ectronics systems.\n\nSpeaker(s): Dr. Victor\, \n\nVirtual: https://events
 .vtools.ieee.org/m/350692
LOCATION:Virtual: https://events.vtools.ieee.org/m/350692
ORGANIZER:balakrishnan_mani@ieee.org
SEQUENCE:4
SUMMARY:SiC Power Technology Status and Barriers to Overcome
URL;VALUE=URI:https://events.vtools.ieee.org/m/350692
X-ALT-DESC:Description: <br /><p style="font-weight: 400\;">Abstract:&nbsp\
 ;</p>\n<p style="font-weight: 400\;">Silicon devices are dominating power 
 electronics due to their excellent starting material quality\, streamlined
  fabrication\, low-cost volume production\, proven reliability and ruggedn
 ess\, and design/circuit legacy. Although Si power devices continue to mak
 e progress\, they are approaching their operational limits primarily due t
 o their relatively low bandgap and critical electric field that result in 
 high conduction and switching losses\, and poor high temperature performan
 ce.</p>\n<p style="font-weight: 400\;">In this presentation\, the co-exist
 ence of Si\, SiC\, and GaN will be discussed\, and their respective compet
 itive advantages highlighted. The favorable material properties of Silicon
  Carbide\, which allow for highly efficient power devices with reduced for
 m-factor and cooling requirements\, will be outlined. High impact applicat
 ion opportunities\, where SiC devices are displacing their incumbent Si co
 unterparts\, will be reported. Fab models and the vibrant SiC manufacturin
 g infrastructure (that mirrors that of Si) will be presented. Barriers to 
 SiC mass commercialization will be identified and analyzed. These include 
 the higher than silicon device cost\, reliability and ruggedness concerns\
 , defects that degrade device performance\, and the need for a trained wor
 kforce to skillfully insert SiC into power electronics systems.&nbsp\;</p>
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