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DESCRIPTION:Recent progress of highly efficient and high-speed electro-opti
 c (EO) modulator technology has received intensive research attention in m
 icrowave photonics and fiber-optic networks. Among the different types of 
 materials used in the modulator\, the thin-film EO waveguide offers intrin
 sic advantages such as a large EO coefficient (r33&gt;150 pm/V)\, traveling w
 ave modulation\, and excellent compatibility with other materials and sili
 con-on-insulator substrates. State-of-the-art efficient EO modulators rely
  on the phase modulation in various types of waveguide structures. Particu
 larly\, highlights of the polymer modulators can be impressed due to the a
 dvantages in fabrication allowed by the spin-on-preparation technique\, wh
 ich enables various waveguide structures on the silicon-on-insulator subst
 rates. To date\, spin-on polymer waveguide modulators have shown outstandi
 ng performance such as high data rate transmission\, low-power consumption
 \, and easy integration to other substrates. The progress makes the modula
 tor device as one of the few possible solutions to realize over 120 Gbaud 
 high-speed signalization [1]. It meets the critical demand in the emerging
  optical interconnects for short-reach and data center networks. Despite b
 eing fast and efficient\, reliability issues should be investigated\, i.e.
 \, stabilities against high-temperature exposure\, high-intensity optical 
 signal\, humidity exposure\, and recycling thermal shock. While progress i
 s significantly being made\, careful consideration should be continued to 
 fully address the industrial applications [1]\, [2]. The heterogeneous int
 egration of strong EO coefficient materials such as ferroelectric epitaxia
 l films is the alternative technique. We have recently prepared the hetero
 geneous thin-film LnNbO3 and silicon waveguide modulator on an insulator a
 nd showed the modulation bandwidth of 60 GHz and 200 Gbit/s PAM4 transmiss
 ion with error-free signal accuracy [3]. Based on the technique\, furtherm
 ore\, we are investigating the high-speed modulators using the ferroelectr
 ic films-on-insulator (FFOI)\, consisting of ferroelectric oxides with per
 ovskite phase such as PZT (Pb[Zi\, Ti]O3)\, PLZT([Pb\, La][Zi\, Ti]O3) and
  BTO (BaTiO3). The EFOI modulators provide very strong EO coefficients\, t
 hus promising the modulation with lower driving voltage\, lower cost\, and
  more compact footprint properties. In this study\, we utilize the spin-on
  technique using precursor sol-gel solutions to obtain FFOI substrates and
  fabricate waveguide modulators. We measured an effective EO coefficient o
 f around 200 pm/V and half-wave voltage length (Vp×L) product smaller tha
 n 1.0 V×cm in a Mach-Zehnder interferometer (MMI) waveguide modulator. Th
 is paper discusses state-of-the-art high-speed modulator devices in teleco
 mmunications applications and our approach from a view point of materials\
 , fabrications and devices.\n\nReferences\n\n-\nG-W. Lu\, et al.\, “[Hig
 h-temperature-resistant silicon-polymer hybrid modulator operating at up t
 o 200 Gbit s−1 for energy-efficient data centres and harsh-environment a
 pplications](https://doi.org/10.1038/s41467-020-18005-7)\,” Nature Commu
 nications\, 11\, 4224 (2020).\n\n-\nH. Sato\, et al.\, “[A 100 Gbaud on-
 off-keying silicon-polymer hybrid modulator operating at up to 110°C](htt
 ps://doi.org/10.1109/LPT.2021.3126945)\,” IEEE Photonics Technology Lett
 ers\, 33\, 1507 (2021)\n\n-\nJ. Mao\, et al.\, “[Heterogeneous silicon-o
 n-lithium niobate electro-optic modulator for 100-Gbaud modulation](https:
 //doi.org/10.1063/5.0109251)\,” 7\, 126103\, APL Photonics (2022).\n\nSp
 eaker(s): Prof. Shiyoshi Yokoyama\, \n\nRoom: Room IW5.57\, Bldg: Ingkarni
 -Wardii\, The University of Adelaide\, Adelaide\, South Australia\, Austra
 lia\, 5005\, Virtual: https://events.vtools.ieee.org/m/352094
LOCATION:Room: Room IW5.57\, Bldg: Ingkarni-Wardii\, The University of Adel
 aide\, Adelaide\, South Australia\, Australia\, 5005\, Virtual: https://ev
 ents.vtools.ieee.org/m/352094
ORGANIZER:withawat@adelaide.edu.au
SEQUENCE:7
SUMMARY:Present and Future Spin-on Electro-optic Waveguide Modulator
URL;VALUE=URI:https://events.vtools.ieee.org/m/352094
X-ALT-DESC:Description: &lt;br /&gt;&lt;p class=&quot;zfr3Q CDt4Ke &quot; dir=&quot;ltr&quot;&gt;&lt;span clas
 s=&quot;C9DxTc &quot;&gt;Recent progress of highly efficient and high-speed electro-opt
 ic (EO) modulator technology has received intensive research attention in 
 microwave photonics and fiber-optic networks. Among the different types of
  materials used in the modulator\, the thin-film EO waveguide offers intri
 nsic advantages such as a large EO coefficient (r&lt;/span&gt;&lt;span class=&quot;C9DxT
 c &quot;&gt;33&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;gt\;150 pm/V)\, traveling wave modulat
 ion\, and excellent compatibility with other materials and silicon-on-insu
 lator substrates. State-of-the-art efficient EO modulators rely on the pha
 se modulation in various types of waveguide structures. Particularly\, hig
 hlights of the polymer modulators can be impressed due to the advantages i
 n fabrication allowed by the spin-on-preparation technique\, which enables
  various waveguide structures on the silicon-on-insulator substrates. To d
 ate\, spin-on polymer waveguide modulators have shown outstanding performa
 nce such as high data rate transmission\, low-power consumption\, and easy
  integration to other substrates. The progress makes the modulator device 
 as one of the few possible solutions to realize over 120 Gbaud high-speed 
 signalization [1]. It meets the critical demand in the emerging optical in
 terconnects for short-reach and data center networks. Despite being fast a
 nd efficient\, reliability issues should be investigated\, i.e.\, stabilit
 ies against high-temperature exposure\, high-intensity optical signal\, hu
 midity exposure\, and recycling thermal shock. While progress is significa
 ntly being made\, careful consideration should be continued to fully addre
 ss the industrial applications [1]\, [2]. The heterogeneous integration of
  strong EO coefficient materials such as ferroelectric epitaxial films is 
 the alternative technique. We have recently prepared the heterogeneous thi
 n-film LnNbO&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;3&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;nb
 sp\;and silicon waveguide modulator on an insulator and showed the modulat
 ion bandwidth of 60 GHz and 200 Gbit/s PAM4 transmission with error-free s
 ignal accuracy [3]. Based on the technique\, furthermore\, we are investig
 ating the high-speed modulators using the ferroelectric films-on-insulator
  (FFOI)\, consisting of ferroelectric oxides with perovskite phase such as
  PZT (Pb[Zi\, Ti]O&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;3&lt;/span&gt;&lt;span class=&quot;C9DxTc
  &quot;&gt;)\, PLZT([Pb\, La][Zi\, Ti]O&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;3&lt;/span&gt;&lt;span 
 class=&quot;C9DxTc &quot;&gt;) and BTO (BaTiO&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;3&lt;/span&gt;&lt;span
  class=&quot;C9DxTc &quot;&gt;). The EFOI modulators provide very strong EO coefficient
 s\, thus promising the modulation with lower driving voltage\, lower cost\
 , and more compact footprint properties. In this study\, we utilize the sp
 in-on technique using precursor sol-gel solutions to obtain FFOI substrate
 s and fabricate waveguide modulators. We measured an effective EO coeffici
 ent of around 200 pm/V and half-wave voltage length (&lt;/span&gt;&lt;span class=&quot;C
 9DxTc &quot;&gt;V&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;p&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;times
 \;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;L&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;) product sma
 ller than 1.0 V&amp;times\;cm in a Mach-Zehnder interferometer (MMI) waveguide
  modulator. This paper discusses state-of-the-art high-speed modulator dev
 ices in telecommunications applications and our approach from a view point
  of materials\, fabrications and devices.&amp;nbsp\;&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;\n&lt;p cla
 ss=&quot;zfr3Q CDt4Ke &quot; dir=&quot;ltr&quot;&gt;&lt;span class=&quot;C9DxTc &quot;&gt;References&lt;/span&gt;&lt;/p&gt;\n
 &lt;ol class=&quot;n8H08c BKnRcf &quot;&gt;\n&lt;li class=&quot;zfr3Q TYR86d lsiHE &quot; dir=&quot;ltr&quot;&gt;\n&lt;
 p class=&quot;zfr3Q CDt4Ke &quot; dir=&quot;ltr&quot; role=&quot;presentation&quot;&gt;&lt;span class=&quot;C9DxTc 
 &quot;&gt;G-W. Lu\,&amp;nbsp\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;et al.&lt;/span&gt;&lt;span class=&quot;C
 9DxTc &quot;&gt;\, &amp;ldquo\;&lt;/span&gt;&lt;a class=&quot;XqQF9c&quot; href=&quot;https://doi.org/10.1038/
 s41467-020-18005-7&quot; target=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;&lt;span class=&quot;C9DxTc aw5
 Odc &quot;&gt;High-temperature-resistant silicon-polymer hybrid modulator operatin
 g at up to 200 Gbit s&lt;/span&gt;&lt;span class=&quot;C9DxTc aw5Odc &quot;&gt;&amp;minus\;1&lt;/span&gt;&lt;
 span class=&quot;C9DxTc aw5Odc &quot;&gt;&amp;nbsp\;for energy-efficient data centres and h
 arsh-environment applications&lt;/span&gt;&lt;/a&gt;&lt;span class=&quot;C9DxTc &quot;&gt;\,&amp;rdquo\;&amp;n
 bsp\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;Nature Communications&lt;/span&gt;&lt;span class=
 &quot;C9DxTc &quot;&gt;\, 11\, 4224 (2020).&lt;/span&gt;&lt;/p&gt;\n&lt;/li&gt;\n&lt;li class=&quot;zfr3Q TYR86d 
 lsiHE &quot; dir=&quot;ltr&quot;&gt;\n&lt;p class=&quot;zfr3Q CDt4Ke &quot; dir=&quot;ltr&quot; role=&quot;presentation&quot;
 &gt;&lt;span class=&quot;C9DxTc &quot;&gt;H. Sato\,&amp;nbsp\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;et al.
 &lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;\, &amp;ldquo\;&lt;/span&gt;&lt;a class=&quot;XqQF9c&quot; href=&quot;htt
 ps://doi.org/10.1109/LPT.2021.3126945&quot; target=&quot;_blank&quot; rel=&quot;noopener&quot;&gt;&lt;spa
 n class=&quot;C9DxTc aw5Odc &quot;&gt;A 100 Gbaud on-off-keying silicon-polymer hybrid 
 modulator operating at up to 110&amp;deg\;C&lt;/span&gt;&lt;/a&gt;&lt;span class=&quot;C9DxTc &quot;&gt;\,
 &amp;rdquo\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;nbsp\;IEEE Photonics Technology Lett
 ers&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;\, 33\, 1507 (2021)&lt;/span&gt;&lt;/p&gt;\n&lt;/li&gt;\n&lt;li
  class=&quot;zfr3Q TYR86d lsiHE &quot; dir=&quot;ltr&quot;&gt;\n&lt;p class=&quot;zfr3Q CDt4Ke &quot; dir=&quot;ltr
 &quot; role=&quot;presentation&quot;&gt;&lt;span class=&quot;C9DxTc &quot;&gt;J. Mao\,&amp;nbsp\;&lt;/span&gt;&lt;span cl
 ass=&quot;C9DxTc &quot;&gt;et al.&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;\, &amp;ldquo\;&lt;/span&gt;&lt;a clas
 s=&quot;XqQF9c&quot; href=&quot;https://doi.org/10.1063/5.0109251&quot; target=&quot;_blank&quot; rel=&quot;n
 oopener&quot;&gt;&lt;span class=&quot;C9DxTc aw5Odc &quot;&gt;Heterogeneous silicon-on-lithium nio
 bate electro-optic modulator for 100-Gbaud modulation&lt;/span&gt;&lt;/a&gt;&lt;span clas
 s=&quot;C9DxTc &quot;&gt;\,&amp;rdquo\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;nbsp\;&lt;/span&gt;&lt;span cla
 ss=&quot;C9DxTc &quot;&gt;7\, 126103\,&amp;nbsp\;&lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;APL Photonics
 &lt;/span&gt;&lt;span class=&quot;C9DxTc &quot;&gt;&amp;nbsp\;(2022).&amp;nbsp\;&lt;/span&gt;&lt;/p&gt;\n&lt;/li&gt;\n&lt;/ol
 &gt;
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